• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1966-1967
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• 2007

Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.86-91
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• 2004

PV power generation, which directly converts solar radiation into electricity, contains numerous significant advantages. It is inexhaustible and pollution-free, silent, contains no rotating parts, and has size-independent electricity conversion efficiency. The positive environmental effect of photovoltaics is that it replaces the more polluting methods of electricity generation or that it provides electricity where none was available before. This paper highlights a novel simple method to abstract the entire parameters of the solar cell. In development, design and operation of PV power generation systems, a technique for constructing V-I curves under different levels of solar irradiance and cell temperature conditions using basic characteristic values of the PV module is required. Everyone who has performed manual acquisition and analysis of solar cell I versus V data would agree that the job is tedious and time-consuming. A better alternative is to use an automated curve tracer to print out the I versus V curves and compute the four major parameters; $V_{oc}$, $I_{sc}$, FF, and . Generally, the V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detailed parameters of the solar cell; A, $R_{s}$ and $R_{sh}$ , which satisfies the user, who aims at the analysis of the development of the PV power generation system, that being advanced simulation. In this paper, the proposed method provides us with satisfactory results to enable us to abstract the detailed parameters of the solar cell; A, $R_s$ and $R_{sh}$.>.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.989-995
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• 1991

By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.290-294
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• 2003

Using a backpropagation neural network (BPNN), a high power semiconductor device was empirically modeled. The device modeled is a n-LDMOSFET and its electrical characteristics were measured with a HP4156A and a Tektronix curve tracer 370A. The drain-source current $(I_{DS})$ was measured over the drain-source voltage $(V_{DS})$ ranging between 1 V to 200 V at each gate-source voltage $(V_{GS}).$ For each $V_{GS},$ the BPNN was trained with 100 training data, and the trained model was tested with another 100 test data not pertaining to the training data. The prediction accuracy of each $V_{GS}$ model was optimized as a function of training factors, including training tolerance, number of hidden neurons, initial weight distribution, and two gradients of activation functions. Predictions from optimized models were highly consistent with actual measurements.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.74.2-74.2
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• 2012

Metallicity is an important tracer of star formation in galaxy evolution. Based on the flux ratios of broad emission lines, AGN metallicity has shown a correlation with AGN luminosity. However, it is not clear what physical parameter drives the observed correlation. Using a sample 69 Palomar-Green QSOs at low-z (z<0.5), we determine BLR gas metallicity from emission line flux ratios, i.e., N V1240/C IV1549, (Si IV1398+O IV1402)/C IV1549 and N V1240/He II1640 based on the UV spectra from the HST and IUE archives. We compare BLR gas metallicity with various AGN properties, i.e., black hole mass, AGN luminosity and Eddington ratio, in order to investigate physical connection between metal enrichment and AGN activity. In contrast to high-z QSOs, which show the correlation between metallicity and black hole mass, we find that the metallicity of low-z QSOs correlates with Eddington ratio, but not with black hole mass, suggesting that metallicity enrichment mechanism is different between low-z and high-z.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2649-2655
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• 2010

$PKC{\delta}$-catalytic V5 Heptapeptide (FEQFLDI, FP7) interacts with heat shock protein 27 (HSP27) and inhibits HSP27-mediated resistance to cell death against various stimuli including radiation therapy. Here, we prepared radio-iodinated heptapeptide and further investigated its uptake properties in HSP27 expression cells. Peptide sequence of FP7 and a negative control peptide (WSLLEKR, QP7) was modified by substituting their C-terminus residue to tyrosine (FP6Y and QP6Y) to label radio-iodine. Iodinated peptides were confirmed by LC mass analysis with cold iodine reaction mixture. Accumulation of [$^{125}I$]iodo-FP6Y and [$^{125}I$]iodo-QP6Y in NCI-H1299 cell line, with higher level of HSP27, and NCI-H460 cell line, with lower level of HSP27, was measured by NaI(Tl) scintillation counter. The modification of substituting C-terminus residue of FP7 to tyrosine (FP6Y) did not affect its interaction with HSP27. Accumulation of [$^{125}I$]iodo-FP6Y in NCI-H1299 cells was 3 fold higher than in NCI-H460 cells. The novel radio-iodinated FP6Y would be used as a tracer for targeting HSP27 protein.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.218-219
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• 2007

Silicon feed stock shortage have acted as major restraints for growth of photovoltaic industry. Concentrating photovoltaic (CPV) system will reduce the use of silicon PV materials. This paper presents the application possibility of mono-crystalline silicon solar cell, which has increased in market share, for PV concentrator. We measured the power of solar cell using sun simulator and I-V curve tracer and compared the results. The comparison of results showed that the concentrated solar cell generated the power more approximately 7 times than without concentration in spite of non-heat sink. If CPV technology included heat sink combines already developed PV tracking system, it will have a merit economically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.22-23
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• 2007

We tried to find the possibility of mono-crystalline silicon solar cell for photovoltaic concentrating system which is major cost portion for PV system using fresnel lens. With solar simulator and I-V curve tracer, we analyzed maximum output characteristics and measured the temperature of concentrated area using infrared camera. Because of temperature increase, there was no merit when concentrating. But at low radiant power, it showed more efficient operation. The combination of heat-sink technology and tracking system to our concentrating PV system would give better performance results.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.529-535
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• 2020

Geant4 is compatible with the Windows operating system in C++ language use, enabling interface functions that link DICOM or software. It was simulated to address the basic structure of the simulation using Geant4/Gate code and to specifically verify the density composition and lung cancer process in the human phantom. It was visualized using the Gate Graphic System, i.e. openGL, Ray Tracer: Ray Tracing by Geant4 Tracing, and using Geant4/Gate code, lung cancer is modeled in the human phantom area in 3D, 4D to verify the simulation progress. Therefore, as a large number of new functions are added to the Gate Code, it is easy to implement accurate human structure and moving organs.