• 제목/요약/키워드: V-I.P-I curve

검색결과 84건 처리시간 0.031초

ZnO:As/ZnO:Al homo-junction LED의 V-I 특성 분석 (Analysis on the V-I Curve of ZnO:As/ZnO:Al homo-junction LED)

  • 오상현;정윤환;유연연;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.410-411
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    • 2007
  • To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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Epitaxial에 의한 Si epi층의 케리어 수명과 P-N접합의 이상전도현상 (Carrier Lfetime and Anormal Cnduction Penomena in Silicon Epitaxial Layer-substrate Junction)

  • 성영권;민남기;김승배
    • 전기의세계
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    • 제26권5호
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    • pp.83-89
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    • 1977
  • This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

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DSP기반 연료전지 하드웨어 시뮬레이터 구현 (Implementation of a DSP Based Fuel Cell Hardware Simulator)

  • 엄준현;임영철;정영국
    • 조명전기설비학회논문지
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    • 제23권1호
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    • pp.59-68
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    • 2009
  • 분산진원으로서 연료전지 발전장치는 100w부터 수백[kw]의 용량을 가지며 종전의 대규모 전력설비와 비교하여 높은 신뢰도를 갖는 고품질의 전력을 공급할 수 있다. 본 연구에서는 소형 분산전원으로서 PEMFC(polymer electrolyte membrane fuel cell)연료전지 발전장치에 대한 PSIM(power electronics simulation tool) 모델을 설정하고 이를 바탕으로 DSP(digital signal processor)기반의 연료전지 하드웨어 시뮬레이터를 구현하였다. 연료전지 전류와 출력전압과의 관계는 연료전지의 전압-전류(V-I) 곡선 중 ohmic영역에서 1차 함수로 간략화 하였다. 구현된 시스템은 PEMFC 하드웨어 시뮬레이터, 절연형 풀 브리지 직류 부스트 컨버터 그리고 60[Hz] PWM인버터로 구성되어있다. 부하변동 및 과도상태에 대한 연료전지 하드웨어 시뮬레이터의 전압-전류-전력(V-I-P) 특성을 파악하였으며, 저항 부하 및 비선형 부하에 대한 전력변환기의 60[Hz] 정현파 교류출력 전압파형을 고찰하였다.

Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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열전발전을 위한 DC-DC Converter의 입력측 전압·전류 센서없는 최대전력점 추적방식 (Maximum Power Point Tracking Method Without Input side Voltage and current Sensor of DC-DC Converter for Thermoelectric Generation)

  • 김태경;박대수;오성철
    • 한국산학기술학회논문지
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    • 제21권3호
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    • pp.569-575
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    • 2020
  • 최근, 화석연료 고갈과 온실 가스 배출에 대한 우려가 높아지면서 신·재생 에너지 기술에 대한 연구가 주목을 받고 있다. 휴대용 전자기기 및 웨어러블 디바이스의 수요가 증가하고 IT기기들이 소형화되면서 배터리의 크기, 사용시간 등의 한계를 극복하기 위한 기술로 에너지 하베스팅이 있다. 본 논문에서는 열전소자의 V-I 특성곡선과 내부저항을 분석하고, 기존의 MPPT제어방식을 비교하였다. P&O제어방식은 열전소자의 전압, 전류를 측정하기 위한 센서 2개를 사용해야하기 때문에 경제적으로 비효율적이다. 따라서 본 논문에서는 출력전압 조절을 위한 센서1개만을 이용하여 MPP를 추적하는 새로운 MPPT제어방식을 제안한다. 제안하는 MPPT제어방식은 duty ratio와 부하의 출력전압의 관계를 이용하였으며, DC-DC Converter의 출력전압을 주기적으로 샘플링하여 duty ratio를 증가 또는 감소시켜 최적의 duty ratio를 찾아 MPP를 유지하도록 제어된다. DC-DC Converter는 Two-Switch 토폴로지인 Cascaded boost-Buck Converter를 이용하여 회로도를 설계하였다. 제안된 MPPT 제어방식은 PSIM 시뮬레이션을 이용한 모의실험을 통하여 검증하였고, 그 결과 열전소자의 V-I 특성곡선으로부터 얻어지는 MPP에서 전압×전류 및 전력값(V=4.2V, I=2.5A, P=10.5W)과 일치함을 확인하였다.

제어 반전 소자의 제조 및 그 특성 (Fabrication and Characteristics of the Controlled Inversion Devices)

  • 김진섭;이우일
    • 대한전자공학회논문지
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    • 제20권1호
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    • pp.45-49
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    • 1983
  • Metal/insulator/n epi-layer/p+구조의 CID(controlled inversion device)를 제조하였다. I-V 특성 곡선에서 ON상태와 OFF상태사이에 부성저항(negative resistance)영역이 나타났다. CID를 제조하기 위해서 행한 산화층 형성 과정에서 600℃에서 5분간 산화시킨 소자의 스위칭 및 홀딩 전압은 각각 5.0V와 2.5V였다. 그리고 입사된 광에 의해서 스위칭 전압은 감소하였으나 홀딩 전압은 변하지 않았다.

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태양광 어레이 모델링을 통한 최대출력점 고찰

  • 유권종;송진수;노명근;성세진;김시경
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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    • pp.113-116
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    • 1996
  • A model of a photovoltaic array written in PSPICE is presented in this paper. PSPICE is used to display array characteristics (I-V, P-V curve) as a function of parameters such as insulation and temperature. This paper is display in detail through a example of SM-50 model.

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Inhibition of L-type Ca2+ current by ginsenoside Rd in rat ventricular myocytes

  • Lu, Cheng;Sun, Zhijun;Wang, Line
    • Journal of Ginseng Research
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    • 제39권2호
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    • pp.169-177
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    • 2015
  • Background: Ginsenoside Rd (GSRd), one of the most abundant ingredients of Panax ginseng, protects the heart via multiple mechanisms including the inhibition of $Ca^{2+}$ influx.We intended to explore the effects of GSRd on L-type $Ca^{2+}$ current ($I_{Ca,L}$) and define the mechanism of the suppression of $I_{Ca,L}$ by GSRd. Methods: Perforated-patch recording and whole-cell voltage clamp techniques were applied in isolated rat ventricular myocytes. Results: (1) GSRd reduced $I_{Ca,L}$ peak amplitude in a concentration-dependent manner [half-maximal inhibitory concentration $(IC_{50})=32.4{\pm}7.1{\mu}mol/L$] and up-shifted the current-voltage (I-V) curve. (2) GSRd ($30{\mu}mol/L$) significantly changed the steady-state activation curve of $I_{Ca,L}$ ($V_{0.5}:-19.12{\pm}0.68$ vs. $-6.26{\pm}0.38mV$; n = 5, p < 0.05) and slowed down the recovery of $I_{Ca,L}$ from inactivation [the time content (${\zeta}$) from 91 ms to 136 ms, n = 5, p < 0.01]. (3) A more significant inhibitive effect of GSRd ($100{\mu}mol/L$) was identified in perforated-patch recording when compared with whole-cell recording [$65.7{\pm}3.2%$ (n = 10) vs. $31.4{\pm}5.2%$ (n = 5), p < 0.01]. (4) Pertussis toxin ($G_i$ protein inhibitor) completely abolished the $I_{Ca,L}$ inhibition induced by GSRd. There was a significant difference in inhibition potency between the two cyclic adenosine monophosphate elevating agents (isoprenaline and forskolin) prestimulation [$55{\pm}7.8%$ (n = 5) vs. $17.2{\pm}3.5%$ (n = 5), p < 0.01]. (5) 1H-[1,2,4]Oxadiazolo[4,3-a]-quinoxalin-1-one (a guanylate cyclase inhibitor) and N-acetyl-$\small{L}$-cysteine (a nitric oxide scavenger) partly recovered the $I_{Ca,L}$ inhibition induced by GSRd. (6) Phorbol-12-myristate-13-acetate (a protein kinase C activator) and GF109203X (a protein kinase C inhibitor) did not contribute to the inhibition of GSRd. Conclusion: These findings suggest that GSRd could inhibit $I_{Ca,L}$ through pertussis toxin-sensitive G protein ($G_i$) and a nitric oxide-cyclic guanosine monophosphate-dependent mechanism.

Design and Application of a Photovoltaic Array Simulator with Partial Shading Capability

  • Beser, Ersoy
    • Journal of Power Electronics
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    • 제19권5호
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    • pp.1259-1269
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    • 2019
  • PV system performance is dependent on different irradiations and temperature values in addition to the capability of the employed PV inverter / maximum power point tracker (MPPT) circuit or algorithm. Therefore, it would be appropriate to use a PV simulator capable of producing identical repeatable conditions regardless of the weather to evaluate the performance of inverter / MPPT circuits and algorithms. In accordance with this purpose, a photovoltaic (PV) array simulator is presented in this paper. The simulator is designed to generate current-voltage (I-V) and power-voltage (P-V) curves of a PV panel. Series connected cascaded modules constitute the basic part of the simulator. This feature also allows for the modeling of PV arrays since the number of modules can be increased and high voltage values can be reached with the simulator. In addition, the curves obtained at the simulator output become similar to the actual curves of sample PV panels with an increase in the number of modules. In order to show the validity of the proposed simulator, it was simulated for various situations such as panels under full irradiance and partial shading conditions. After completing simulations, experiments were realized to support the simulation study. Both simulation and experimental results show that the proposed simulator will be very useful for researchers to carry out PV studies under laboratory conditions.

PLASMA POLYMERIZED THIN FILMS GROWN BY PECVD METHOD AND COMPARISON OF THEIR ELECTROCHEMICAL PROPERTIES

  • I.S. Bae;S.H. Cho;Park, Z. T.;Kim, J.G.;B. Y. Hong;J.H. Boo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2003년도 추계학술발표회초록집
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    • pp.119-119
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

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