• Title/Summary/Keyword: V-t characteristics

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Breakdown, V-t and Degradation Characteristics of Insulation in Liquid Nitrogen for HTS Transformer (고온초전도 변압기를 위한 액체질소 중 절연 파괴, V-t. 열화 특성)

  • Nguyen, Van-Dung;Joung, Jong-Man;Baek, Seung-Myeong;Lee, Chang-Hwa;Suck, Song-Hee;Kim, Sang-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.6
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    • pp.316-323
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    • 2004
  • HTS transformer is one of the most promising devices to supply enough electric energy for quick increase consumption. However, for practical design of the HTS transformer, it is necessary to establish the research on breakdown, V-t characteristics, degradation, and so on. In this paper, we discussed breakdown characteristics and V-t characteristics of polyimide/L$N_2$ and glass fiber reinforced plastic/$LN_2$ composite insulations. These composite insulations have been used as turn-to-turn and layer-to-layer insulations for HTS transformer respectively, Moreover, we investigated the degradation of these insulation samples after breakdown using microscope and SEM photograph.

V-t Characteristics in $SF_6-N_2$ Mixtures for Transient Impulse Voltages ($SF_6-N_2$ 혼합가스에서 과도임펄스전압에 대한 V-t특성)

  • Lee, Bok-Hui;Lee, Gyeong-Ok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.9
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    • pp.456-465
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    • 2001
  • In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.

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A Study on the A.C.Breakdown Voltage-Temperature Characteristics for Air Insulated Power Installation (공기절연 전력설비를 위한 교류전로파괴전압-온도특성에 관한 연구)

  • 김상구;송현직;김영훈;이광식;이동인
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.9 no.1
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    • pp.47-53
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    • 1995
  • In this paper, the characteristics of breakdown voltage($\textrm{V}_{Brms}$) -temperature(T) for air insulated power installation in flowing air with variation of T(30[$^{\circ}C$] -180[$^{\circ}C$]) are presented. To study these subjects, needle-to-needle gap in the circular pipe(inner diameter 5[cm]) are used. Also, theories of gas discharge and hydrodynamics in pipe were used to analysis for the characteristics. The $\textrm{V}_{Brms}$ is proportional to flow velocity. At high velocity, $\textrm{V}_{Brms}$ is described the saturation. At high T(180[$^{\circ}C$]), $\textrm{V}_{Brms}$ is about 4.7(kV] lower than low T(30[$^{\circ}C$]). The empirical equation obtained from this study is $\textrm{V}_{Brms}=A\times{Log[Re}+B$. Where A, B : Constant.

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Water Treatment Characteristics by Const ucted Wetland with Different Vegetation - Open Water Arrangements (식생습지와 개방수역의 배열에 따른 인공습지의 수처리 특성)

  • Jang, Jeong-Ryeol;Choi, Sun-Hwa;Kwun, Soon-Kuk
    • Journal of Korean Society on Water Environment
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    • v.23 no.1
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    • pp.122-130
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    • 2007
  • This study was conducted to evaluate water treatment characteristics according to vegetated wetland(V) and open water(O) arrangements in free water surface constructed wetland. Three pilot-scale wetlands, V-V, O-V and V-O, were built and operated. $BOD_5$ was a slightly reduced at all the arrangements because the influent concentration was so low as background concentration of constructed wetlands. While T-N and T-P removal efficiency showed higher than 50% for all cases. The O-V arrangement showed the highest removal efficiency: 20% for $BOD_5$, 56% for SS, 59% for T-N and 72% for T-P. Effluent concentration of the O-V were significantly low compared with those from the V-O. O-V arrangement would be beneficial in the light of pollutant removal efficiency as well as construction cost.

Characterization of Current Drivability and Reliability of 0.3 um Inverse T-Gate MOS Compared with Those of Conventional LDD MOS (0.3 um급 Inverse-T Gate 모스와 LDD 모스의 전류구동력 및 신뢰성 특성비교)

  • 윤창주;김천수;이진호;김대용;이진효
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.8
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    • pp.72-80
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    • 1993
  • We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.

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Phenotypic and genetic characteristics of Vibrio ichthyoenteri isolated from the olive flounder, Paralichthys olivaceus of culturing size (미성어 양식 넙치, Paralichthys olivaceus에서 분리한 Vibrio icthyoenteri의 표현형 및 유전형적 특성)

  • Park, Su-Il;Lee, Hua;Kim, Su-Mi
    • Journal of fish pathology
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    • v.19 no.2
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    • pp.127-139
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    • 2006
  • From 2002 to 2004, various vibrios were isolated from the olive flounder, Paralichthys olivaceus of culturing size with disease signs. During this survey, it was known that the high proportion of Vibrio ichthyoenteri was occupied among the isolated vibrios. Generally, V. ichthyoenteri is well known as the pathogen of bacterial enteritis of olive flounder larvae. The aim of the present study was the compare the characteristics of two groups of V. ichthyoenteri, culturing sized olive flounder, and larvae of olive flounder showing the intestinal necrosis. The research was focused on the physiology, biochemistry, genetics in the two bacterial groups. The physiological and biochemical characteristics of the tested strains were very similar. The intergenic spacer (IGS) region between the 16S and 23S rRNA genes of 21 isolated strains and 3 reference strains, V. ichthyoenteri, were investigated by PCR fragment length typing and DNA sequencing. After the isolated strains were identified as V. ichthyoenteri, not only phenotypic characteristics of the isolated and reference strains but also homology of 16S-23S IGS of all isolated strains and reference strains as 99.1~100%. The V. ichthyoenteri showed 4 specific 16S-23S patterns and contained no-tRNA, tRNAGlu(TTC) , tRNAIle(GAT) tRNAAla(TGC) type .

Optimization of Capacitor Threshold VT Implantation for Planar P-MOS DRAM Cell (평면구조 P-MOS DRAM 셀의 커패시터 VT 이온주입의 최적화)

  • Chang Sung-Keun;Kim Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.126-129
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    • 2006
  • We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.

Electrical Insulation Characteristics at Cryogenic Temperature for High Temperature Superconducting Cables

  • Okubo, Hitoshi;Hayakawa, Naoki
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.1
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    • pp.15-20
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    • 2004
  • This paper discusses electrical insulation characteristics at cryogenic temperature, especially focusing on partial discharge (PD) inception characteristics, for high temperature superconducting cables. In liquid nitrogen (L$N_2$) / polypropylene (PP) laminated paper composite insulation system, PD inception strength (PDIE) was evaluated in terms of volume effect and V-t characteristics. Different kinds of butt gap condition were applied in the experiments, using parallel plane and coaxial cylindrical cable samples. Experimental results revealed that the volume effect on PDIE could be evaluated by the statistical stressed liquid volume (SSLV) taking account the discharge probability not only in the butt gap but also in the other thin layers between PP laminated papers. Furthermore, the indices n of V-t characteristics at PD inception were estimated to be 80∼110, irrespective of the butt gap condition.

A Characteristics of Horizontal Swing Angle of Suspension Clamp in V type Suspension String Sets (V련 현수애자장치의 클램프 횡진 특성)

  • Sohn Hong-Kwan;Lee Hyung-Kwon;Min Byeong-Wook
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.54 no.3
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    • pp.133-138
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    • 2005
  • This paper presents a characteristics of horizontal swing angle in V type suspension string sets for 765kV T/L. The design of V type suspension string set does not differ from that of general string set for general towers, but it prevents instabilities from swing motion by the horizontal angle and by the wind pressure. We were designed specially 6 conductor yoke, arcing horn and earth horn. And we were decided to 550mm for a distance of strings. We were carried out characteristics of horizontal swing test and movement of mass center test for V-string sets of 400kN single, 300kN double and 400kN double. This products will be used for 765kV T/L of 1 circuit in suspension towers.