• 한국세라믹학회지
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• 제43권6호
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• pp.376-382
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• 2006

In the $Al(OH)_3-SiO_2-AlF_3$ system, leaf-shaped fluorotopaz was first formed at $800^{\circ}C$ and mullite whisker was formed at $1,100^{\circ}C$. The mass transportation of Al and Si as gas phase, the fast reaction and growth, and the absence of liquid phase existence in mullite whisker showed that the formation and growth of mullite was from the solid-vapor reaction.

• Bulletin of the Korean Chemical Society
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• 제26권9호
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• pp.1354-1358
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• 2005

Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.225-228
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• 2012

In order to synthesize LED phosphor materials, we have applied three novel synthesis techniques, "melt synthesis", "fluidized bed synthesis" and "vapor-solid hybrid synthesis", in contrast with the conventional solid state reaction technique. These synthesis techniques are also a general and powerful tool for rapid screening and improvements of new phosphor materials.

• 한국세라믹학회지
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• 제35권12호
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• pp.1336-1336
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• 1998

2단계 열탄소환원법으로 탄화규소 휘스커를 Ar과 H2분위기에서 기상-고상, 2단계, 기상-액상-고상 성장기구를 통해 각각 합성하였다. Ar분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다. SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) 이때 전체 반응속도는 세번째 반응에 참여하는 탄소에 의해 지배되었다. 따라서 이 반응이 휘스커 합성의 율속반응으로 판단되었다. 한편 H2 분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다.SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) 이때 전체 반응속도는 SiO(v) 기체의발생 속도에 의해 지배되었다. 따라서 첫번째 반응이 휘스커 합성의 율속 반응인 것으로 판단되었다.

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3767-3770
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• 2013

Potassium methylselenite ($KSeO_2(OCH_3)$) was reduced to elemental selenium, Se(0), and then doped onto montmorillonite K 10 (MK10) clay to examine the interaction between elemental mercury (Hg(0)) vapor and Se(0) in an effort to understand the possible heterogeneous reaction of Hg(0) vapor and Se(0) solid. The clay was used as a cost-effective support material for uniform dispersion of Se(0). The Se(0)-doped MK10 showed an excellent reaction performance with Hg(0) under an inert nitrogen gas at 70 and $140^{\circ}C$ in our lab-scale fixed-bed system. However, the precursor, $KSeO_2(OCH_3)$-doped MK10 showed a negligible reaction performance with Hg(0), suggesting that the oxidation state of selenium plays a key role in the reaction of Hg(0) vapor and selenium compounds.

• Bulletin of the Korean Chemical Society
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• 제16권6호
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• pp.507-511
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• 1995

Catalytic chlorination of chlorobenzene was studied in vapor phase using various solid-acid catalysts such as silica-alumina, alumina, zeolite and a modified clay prepared by impregnating bentonite with ferric chloride. The conversions of both chlorine gas and chlorobenzene showed high over silica-alumina, alumina and modified clay catalysts. However relatively large amounts of polychlorinated benzene derivatives were also observed. The active species of catalytic activity in chlorination of chlorobenzene in vapor phase were proved to be as Lewis acid sites by in-situ IR experiments. The strength of Lewis acid sites which were effective for the vapor-phase chlorination seemed to be having Hammett acidity Ho >-3.0. The selectivity to dichlorobenzenes was proved to be high over the zeolite catalyst due to their shape-selective properties. p-Dichlorobenzene or dichlorobenzene selectivities were improved more or less by changing the reaction conditions.

• 한국세라믹학회지
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• 제43권5호
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• pp.320-326
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• 2006

Mullite whiskers were synthesized by a vapor-solid reaction with $Al(OH)_3-SiO_2-AlF_3$. The heat treatment temperature did not affect the shape of mullite whisker but the composition change resulted in different sizes. The first one was $30-50{\mu}m$ in size with the aspect ratio of 60 and above, and the second one was $600{\mu}m$ and below in size with the aspect ratio of 15 and below. The $Al_2O_3$ content in formed mullite whisker was 73.57-80.29 wt%, which is high $Al_2O_3$ content composition. The Young's modulus and the hardness measured by nano-indentation method were 136.7 GPa and 19.81 GPa, respectively.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1563-1566
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• 2009

One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.