• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.391-396
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• 2023

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.372-376
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• 2022

Since the ZnO varistor is a semiconductor device, the internal thermal distribution during the varistor operation is recognized as an important factor in the performance and deterioration of the varistor. For an optimal varistor structure design, the thermal runaway phenomenon during the varistor operation was interpreted using the Comsol 5.2 analysis program by a finite element analysis. The maximum temperature of the center measured in the cross section of the ZnO varistor was confirmed to increase as the temperature moved from the lower electrode to the center towards the upper electrode up to 572.6 K. The electrodes are thinned so that the influence of the Schottky barrier is not great. The heat gradient balance is determined to be improved when the electrode of the hybrid form is introduced. The thickness, density, pore distribution, impurity uniformity, and particle size of the ZnO varistor are required, and it is determined that the pyrolysis gradient will be improved regardless of the electrode thickness. When these results are applied to design the ZnO varistor, the optimal structure of the ZnO varistor can be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.294-295
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• 2006

Varistor fabricated with ZnO nano-powder was studied about the characteristic of energy capability in this paper. ZnO nano-powder varistor were sintered in air at $1050\;^{\circ}C$. The electrical properties and residual voltage of ZnO nano-powder varistor were obtained. Our ZnO nano-powder varistor has about 3 times of electric field at varistor voltage as compared with commercial ZnO varistor fabricated with micro-powder. In the current impulse withstand test, our nano varistor has had better performance than micro varistor. To analysis energy capability take infrared images for pyrexia distribution of each varistor. ZnO Nano-powder varistor has shown much quick response property because of increasing effective cross-section.

• 전기의세계
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• v.30 no.3
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• pp.140-145
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• 1981

본고의 내용은 다음과 같다. 1. ZnO Varistor의 전기적 특성 2. ZnO Varistor의 이용방법 3. ZnO Varistor의 장점과 문제점

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.862-867
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• 2006

Bi-based nano-varistors and micro-varistors fabricated with each ZnO nano-powder and micro-powder were studied about characteristics on the surge capability in this study. ZnO nano-varistors were sintered in air at $1050^{\circ}C$ for 2 hr. The voltage-current and residual voltage properties of ZnO nano-varistor were compared with their of ZnO micrio-varistor. As a result of these properties, our ZnO nano-varistor has about 3 times at operating voltage as compared with conventional ZnO varistor fabricated with micro-powder and the residual voltage was 8.06 kV at nominal discharge current 101kA in the lighting impulse current test. And then the residual voltage rate 1.72 of our nano-varistor has had better performance than the 1.79 of micro-varistor because ZnO nano-varistor has shown much quick response property because of increasing effective cross-section area. Also, to analysis surge capability took thermal images for pyrexia temperature distribution with each of the varistors after operating varistors. Nano-varistor doesn't have shown local overheating and can confirm accurate temperature grade on the surface of its.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.105-109
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• 2002

A TVS and Varistor are preservative equipment against electro static discharge(ESD). We use a TVS for I/O protection of a circuit which has faster response time than a Varistor. And a Varistor has large power capability, therefore, which be used in input stage for internal pressure prevention. This paper will compare a TVS with a Varistor with respect to response characteristic to ESD in DC 24[V] low voltage circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.629-633
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• 2002

The degradation behaviour of ZPCCL-based varistor ceramics composed of 97.5 mol%ZnO-0.5 mol% $Pr_6O_{11}-1.0$ mol% $Cr_2O_3-0.5$ mol% $La_2O_3$ was investigated under various DC accelerated aging streses. The varistor ceramics sintered for 1 h exhibited excellent nonlinearity, in which the nonlinear exponent is 81.6 and the leakage current is $0.2{\mu}A$. It was found that this varistor ceramics possess high stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.14%, -3.7%, and 85.0%, respectively, against DC accelerated aging stress. On the contrary, the varistor ceramics sintered for 2 h also exhibited high nonlinearity and stability, but they were bad characteristics, compared with the varistor ceramics sintered for 1 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.343-346
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• 1998

Degradation characteristics of the Pr-based ZnO varistor with $Y_2O_3$content (0.0-4.0 mol!%j were investigated. It was appeared that the variation of the J-E characteristics in the reverse direction before and after the applied stress with increasing $Y_2O_3$ content was larger than that of the forward direction but the variation was extrernly small. For all varistor, the leakage current with the stress time during the applied stress somewhat increased initialy but afterthat was almost constant or slightly decreased. The overall varistor voltage and nonlinear coefficient were less than 5%. Especially, in the case of Pr-based ZnO varistor containing 2.0 mol% to 4.0 mol% $Y_2O_3$, the variation of breakdown voltage and nonlinear coefficient was less than 1% and 5%. respectively. As a result, they showed good stability.