• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.17-24
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Journal of Power Electronics
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• v.9 no.3
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• pp.335-342
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• 2009

The Z-source inverter (ZSI) provides unique features such as the ability to boost dc voltage with a single stage simple structure. Although the dc capacitor voltage can be boosted by a shoot-through state, the voltage stress across the switching devices is rapidly increased, so high switching device power is required at the ZSI. In this paper, algorithms for minimizing the voltage stress are suggested. The possible operating region for obtaining a desired ac output voltage according to both the shoot-through time and active state time is investigated. The reference capacitor voltages are derived for minimizing the voltage stress at any desired ac output voltage by considering the dc input voltage. The proposed methods are carried out through the simulation studies and experiments with 32-bit DSP.

• International Journal of Safety
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• v.1 no.1
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• pp.36-42
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• 2002

This paper is aimed at predicting the life of rubber insulating gloves under normal operating stresses from relatively rapid test performed at higher stresses. Specimens of rubber insulating gloves are subject to multiple stress conditions, i.e. combined electrical and thermal stresses. Two modes of electrical stress, step voltage stress and constant voltage stress are used in specimen aging. There are two types of test for electrical stress in this experiment: the one is Breakdown Voltage (BDV) test under step voltage stress and thermal stress and the other is lifetime test under constant voltage stress and temperature stress. The ac breakdown voltage defined as the break-down point of insulation that leakage current excesses a limit value, l0mA in this experiment, is determined. Because the very high variability of aging data requires the application of statistical model, Weibull distribution is used to represent the failure times as the straight line on Weibull probability paper. Weibull parameters are deter-mined by three statistical methods i.e. maximum likelihood method, graphical method and least squares method, which employ SAS package, Weibull probability paper and FORTRAN, respectively. Two chosen models for predicting the life under simultaneous electrical and thermal stresses are inverse power model and exponential model. And the constants of life equation for multistress aging are calculated using numerical method, such as Gauss Jordan method etc.. The completion of life equation enables to estimate the life at normal stress based on the data collected from accelerated aging test. Also the comparison of the calculated lifetimes between the inverse power model and the exponential model is carried out. And the lifetimes calculated by three statistical methods with lower voltage than test voltage are compared. The results obtained from the suggested experimental method are presented and discussed.

• Proceedings of the KIEE Conference
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• summer
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• pp.1187-1189
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• 2004

This paper presents a boost circuit topology driving in high - frequency. It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage stress in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than voltage stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment result compares the existing voltage stress of free-wheeling diode with the proposed voltage stress of that.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.136-139
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching element. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress which is twice of input voltage in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than input voltage with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and confirmed the waveform of each mode with simulation result. Also the experiment result verified the simulation waveform and compared the existing voltage stress of free-wheeling diode with the proposed voltage stress of that. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.57-66
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• 2012

When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.1-4
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• 2005

The chemical composition and uniaxial compressive stress are varied to observe their effect on the current-voltage characteristics of ZnO based ceramics. The variation of chemical composition produces two kinds of ceramics showing ohmic and nonohmic current-voltage characteristics. The current at a fixed voltage increased with the increase of the compressive stress for both ohmic and nonohmic ceramics. Ceramics showing nonohmic behavior exhibit better reversible return of current-voltage curve when the applied compressive stress is removed from the ceramics than those showing ohmic behavior do. We found an appropriate chemical composition showing linear relation between current and stress at a fixed voltage. The ceramic materials with an appropriate chemical composition can be used as a potential sensing material in pressure sensors.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2698-2700
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• 1999

The MRC minimizes a parasitic oscillation using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So the converter is capable of operating at a high switching and also reducing the losses. But the resonant voltage stress across a resonant switch is 4-5 times a input voltage. This high voltage stress increases the conduction loss in MOSFET. In this paper, the CM forward MRC with synchronous rectifier and AT forward MRC are compared about efficiency and semiconductor stress. For analysis, we have built a 50W CM forward MRC and a 50W AT forward MRC. in which the input voltage is 48V, output voltage is 5V, each other. The measured voltage stress is about 170V of 2.9 times the input voltage in the AT Forward MRC, about 106V of 1.8 times the input voltage in CM forward MRC, and the efficiency is 81.05% in AT Forward MRC, 83.61% in CM forward MRC.

• Journal of Power Electronics
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• v.18 no.1
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• pp.11-22
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• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.