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A 2 GHz Compact Analog Phase Shifter with a Linear Phase-Tune Characteristic (2 GHz 선형 위상 천이 특성을 갖는 소형 아날로그 위상천이기)

  • Oh, Hyun-Seok;Choi, Jae-Hong;Jeong, Hae-Chang;Heo, Yun-Seong;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.1
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    • pp.114-124
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    • 2011
  • In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

Phase transformation and magnetic properties of $Ni_xFe_{100-x}$ thin films deposited by a co-sputtering (동시 스퍼터링법으로 제조된 $Ni_xFe_{100-x}$ 박막의 상변화와 자기적 특성)

  • Kang, Dae-Sik;Song, Jong-Han;Nam, Joong-Hee;Cho, Jeong-Ho;Chun, Myoung-Pyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.6
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    • pp.282-287
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    • 2009
  • $Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

A Medium Power Single-Pole-Double-Throw MMIC Switch for IEEE 802.11a WLAN Applications (IEEE 802.11a 무선랜용 중간전력 SPDT 초고주차단일집적회로 스위치 제작 및 특성)

  • Mun JaeKyoung;Kim Haecheon;Park Chong-Ook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.10A
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    • pp.965-970
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    • 2005
  • In this paper, SPDT Tx/Rx MMIC switch applicable to IEEE 802.11a WLAN systems is designed and fabricated using a specific designed epitaxial layered pHEMT wafer and ETRI's $0.5{\mu}m$ pHEMT switch process. The SPDT switch exhibits a low insertion loss of 0.68dB, high isolation of 35.64dB, return loss of 13.4dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V. The comparison of the measured performances with commercial products based on the GaAs pHEMT technology for low voltage operating at ${\pm}$ 3V/0V shows that the return loss is somewhat inferior to the commercial products and insertion loss is compatible with each other however, isolation characteristics are much better than in conventional chips. Based on these performances, we can conclude that the developed SPDT switch MMIC has an enough potential for IEEE802.11a standard 5 GHz-band wireless LAN applications.

Effect of the catalyst deposition rates on the growth of carbon nanotubes

  • Ko, Jae-Sung;Choi, In-Sung;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.264-264
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    • 2010
  • Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

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Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$/Ar Inductively Coupled Plasma ($Cl_2/BCl_3$/Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각)

  • Yang, Xue;Kim, Dong-Pyo;Lee, Cheol-In;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.145-145
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    • 2008
  • High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

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The Effect of Mask Patterns on Microwire Formation in p-type Silicon (P-형 실리콘에서 마이크로 와이어 형성에 미치는 마스크 패턴의 영향)

  • Kim, Jae-Hyun;Kim, Kang-Pil;Lyu, Hong-Kun;Woo, Sung-Ho;Seo, Hong-Seok;Lee, Jung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.418-418
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    • 2008
  • The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

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Design of a Low Phase Noise Vt-DRO Based on Improvement of Dielectric Resonator Coupling Structure (유전체 공진기 결합 구조 개선을 통한 저위상 잡음 전압 제어 유전체 공진기 발진기 설계)

  • Son, Beom-Ik;Jeong, Hae-Chang;Lee, Seok-Jeong;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.6
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    • pp.691-699
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    • 2012
  • In this paper, we present a Vt-DRO with a low phase noise, which is achieved by improving the coupling structure between the dielectric resonator and microstrip line. The Vt-DRO is a closed-loop type and is composed of 3 blocks; dielectric resonator, phase shifter, and amplifier. We propose a mathematical estimation method of phase noise, using the group delay of the resonator. By modifying the coupling structure between the dielectric resonator and microstrip line, we achieved a group delay of 53 nsec. For convenience of measurement, wafer probes were inserted at each stage to measure the S-parameters of each block. The measured S-parameter of the Vt-DRO satisfies the open-loop oscillation condition. The Vt-DRO was implemented by connecting the input and output of the designed open-loop to form a closed-loop. As a result, the phase noise of the Vt-DRO was measured as -132.7 dBc/Hz(@ 100 kHz offset frequency), which approximates the predicted result at the center frequency of 5.3 GHz. The tuning-range of the Vt-DRO is about 5 MHz for tuning voltage of 0~10 V and the power is 4.5 dBm. PFTN-FOM is -31 dBm.

Analysis of Nutrients Balance during Paddy Rice Cultivation (수도재배시 논에서의 영양물질 수지 분석)

  • Hwang, Ha-Sun;Jeon, Ji-Hong;Ham, Jong-Hwa;Yoon, Chun-Gyeong
    • Korean Journal of Ecology and Environment
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    • v.36 no.1 s.102
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    • pp.66-73
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    • 2003
  • Field experimental study was performed to evaluate water and nutrient balances in paddy rice culture. The water balance showed that outflow generally balanced the inflow showing that about half (47${\sim}$54%) of total outflow was lost by surface drainage. No significant effect of fertilization rate was observed from three treatments (150%, 100%, and 70% of standard fertilization) on both rice yield and nutrient outflow from surface drainage. Therefore, reducing nonpoint source nutrient loading by reducing fertilization may not work well in the range of normal paddy rice farming practice, and instead it could be achieved by reducing surface drainage outflow. Water-saving irrigation by reducing pending depth, raising ridge height in rice field, and minimizing forced surface drainage are suggested to reduce surface drainage outflow. These practices can save water and protect water quality, however, deviation from conventional standard practices might affect the rice yield and further investigations are necessary. It was demonstrated that rainfall affects nutrient net outflow and paddy rice culture might be beneficial to wafer quality protection under normal rainfall condition.

Study of Supercritical Carbon Dioxide/n-Butyl Acetate Co-solvent System with High Selectivity in Photoresist Removal Process (포토레지스트 공정에서 높은 선택성을 가지는 초임계 이산화탄소/n-butyl acetate 공용매 시스템 연구)

  • Kim, Dong Woo;Heo, Hoon;Lim, Kwon Teak
    • Clean Technology
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    • v.23 no.4
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    • pp.357-363
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    • 2017
  • In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.

Exposure to Volatile Organic Compounds and Possibility of Exposure to By-product Volatile Organic Compounds in Photolithography Processes in Semiconductor Manufacturing Factories

  • Park, Seung-Hyun;Shin, Jung-Ah;Park, Hyun-Hee;Yi, Gwang-Yong;Chung, Kwang-Jae;Park, Hae-Dong;Kim, Kab-Bae;Lee, In-Seop
    • Safety and Health at Work
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    • v.2 no.3
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    • pp.210-217
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    • 2011
  • Objectives: The purpose of this study was to measure the concentration of volatile organic compound (VOC)s originated from the chemicals used and/or derived from the original parental chemicals in the photolithography processes of semiconductor manufacturing factories. Methods: A total of four photolithography processes in 4 Fabs at three different semiconductor manufacturing factories in Korea were selected for this study. This study investigated the types of chemicals used and generated during the photolithography process of each Fab, and the concentration levels of VOCs for each Fab. Results: A variety of organic compounds such as ketone, alcohol, and acetate compounds as well as aromatic compounds were used as solvents and developing agents in the processes. Also, the generation of by-products, such as toluene and phenol, was identified through a thermal decomposition experiment performed on a photoresist. The VOC concentration levels in the processes were lower than 5% of the threshold limit value (TLV)s. However, the air contaminated with chemical substances generated during the processes was re-circulated through the ventilation system, thereby affecting the airborne VOC concentrations in the photolithography processes. Conclusion: Tens of organic compounds were being used in the photolithography processes, though the types of chemical used varied with the factory. Also, by-products, such as aromatic compounds, could be generated during photoresist patterning by exposure to light. Although the airborne VOC concentrations resulting from the processes were lower than 5% of the TLVs, employees still could be exposed directly or indirectly to various types of VOCs.