• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.108-109
• /
• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.11
• /
• pp.3367-3371
• /
• 2013

MgO nanorods were fabricated by the thermal evaporation of $Mg_3N_2$. The influence of ZnO sheathing and hydrogen plasma exposure on the photoluminescence (PL) of the MgO nanorods was studied. PL measurements of the ZnO-sheathed MgO nanorods showed two main emission bands: the near band edge emission band centered at ~380 nm and the deep level emission band centered at ~590 nm both of which are characteristic of ZnO. The near band edge emission from the ZnO-sheathed MgO nanorods was enhanced with increasing the ZnO shell layer thickness. The near band edge emission from the ZnO-sheathed MgO nanorods appeared to be enhanced further by hydrogen plasma irradiation. The underlying mechanisms for the enhancement of the NBE emission from the MgO nanorods by ZnO sheathing and hydrogen plasma exposure are discussed.

• Journal of IKEEE
• /
• v.22 no.3
• /
• pp.712-715
• /
• 2018

ZnO nanorods were grown on ZnO seed films by a hydrothermal method. The rf sputtered ZnO thin films annealed at $600^{\circ}C$ were employed as the seed films. The ZnO nanorods were annealed at $400^{\circ}C$ and $800^{\circ}C$, respectively. The structural and optical property dependence of ZnO nanorods on the annealing was studied. The UV peak showing the strong intensity and narrow FWHM was obtained from ZnO nanorods annealed at $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.450-450
• /
• 2011

This study reports the hydrogen sulfide gas sensing properties of ZnO nanorods bundle and the investigation of gas sensing mechanism. Also the improvement of sensing properties was also studied through the application of ZnO heterstructured nanorods. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and ZnO nano-heterostructures were prepared by sonochemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. The gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. In order to improve the gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by deposition of CuO, Au on the ZnO nanorods bundle. These heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with target gas.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.10
• /
• pp.1488-1493
• /
• 2017

Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on $SiO_2/Si$ wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.122-122
• /
• 2003

In recent years, there has been increasing interest in quasi one-dimensional nanostructural systems, because of their numerous potential applications in various areas, such as materials sciences, electronics, optics, magnetism and energy storage. Specifically, zinc oxide (ZnO) is recognized as one of the most promising oxide semiconductor materials, because of its good optical, electrical, and piezoelectrical properties. The ZnO nanorods were synthesized using vapor-solid (VS) mechanism on soda lime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of a Zn powder at 500. As-fabricated ZnO nanorods had an average diameter and length of 40nm and 3$\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The Photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380nm and a green emission at around 500nm.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.1
• /
• pp.76-79
• /
• 2014

We report Zinc oxide (ZnO) nanorods synthesis and electrochemical luminescence (ECL) cell fabrication. The ECL cell was fabricated using the electrode of ZnO nanorods and Ru(II) complex ($Ru(bpy)_3{^{2+}}$) as a luminescence materials. The fabricated ECL cell is composed of F-doped $SnO_2$ (FTO) glass/ Ru(II)/ZnO nanorods/FTO glass. The highest intensity of the emitting light was obtained at the wavelength of ~620 nm which corresponds to dark-orange color. At a bias voltage of 3V, the measured ECL efficiencies were 5 $cd/m^2$ for cell without ZnO nanorod, 145 $cd/m^2$ for ZnO nanorods-$5{\mu}m$, 208 $cd/m^2$ for ZnO nanorods-$8{\mu}m$ and 275 $cd/m^2$ for ZnO nanorods-$10{\mu}m$, respectively. At a bias voltage of 3.5V, the use of ZnO nanorods increases ECL intensities by about 3 times compared to the typical ECL cell without the use of ZnO nanorods.

• Journal of the Korean Vacuum Society
• /
• v.16 no.4
• /
• pp.286-290
• /
• 2007

We fabricated NiO coated ZnO nanorods using ZnO nanorods grown on a Si substrate. After thermal hydrogenation process of these NiO-ZnO core-shell nanorods, we confirm that Ni nanodots were built up on the surface of ZnO nanorods. Photoluminescence (PL) measurements at T=5 K were made to understand the optical properties of these various nanorods. As samples sequencially transformed into $ZnO{\rightarrow}NiO-ZnO{\rightarrow}Ni$ nanodot-ZnO, PL transition energies and intensities are varied as well. In comparison to pure ZnO nanorod, the acceptor bound exciton ($A^0X$) became the minor peak for NiO-ZnO nanorods. On the other hand, for Ni nanodot-ZnO sample, ($A^0X$) transition peak intensity became the most dominant peak. This is due to the fact that during thermal hydrogenation process, appreciable amounts of Ni and hydrogen ions defused into ZnO nanorod which played as accepters.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.3
• /
• pp.15-18
• /
• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.6
• /
• pp.753-758
• /
• 2018

We investigated annealing effects of seed layers on the properties of ZnO nanorods grown on the seed layers. ZnO nanorods were grown by a hydrothermal method. ~100 nm-thick ZnO films were sputtered on oxidized Si wafers and quartz as seed layers. The ZnO films were annealed at $400^{\circ}C$, $600^{\circ}C$, and $800^{\circ}C$, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 3 hours in the mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine. X-ray diffraction was carried out to estimate the crystallinity and strain of ZnO films and nanorods. A field emission scanning electron microscope was employed to observe the morphology of the films and nanorods. PL(photoluminescence) measurements were conducted with 266 nm light. It was found that the annealing of seed layers increase the growth rate of nanorods, and change compressive strain of nanorods to tensile strain. The intensity of PL in the UV region reduced by using the annealed seed layers.