• Journal of Powder Materials
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• v.21 no.6
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• pp.415-421
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• 2014

W-10vol.%ZrC composites reinforced by micrometric and nanosized ZrC particles were prepared by hot-pressing of 25 MPa for 2 h at $1900^{\circ}C$. The effect of ZrC particle size on microstructure and mechanical properties at room temperature and elevated temperatures was investigated by X-ray diffraction analysis, scanning electron microscope and transmission electron microscope observations and the flexural strength test of the W-ZrC composite. Microstructural analysis of the W-ZrC composite revealed that nanosized ZrC particles were homogeneously dispersed in the W matrix inhibiting W grain growth compared to W specimen with micrometric ZrC particle. As a result, its flexural strength was significantly improved. The flexural strength at room temperature for W-ZrC composite using nanosized ZrC particle being 740 MPa increased by around 2 times than that of specimen using micrometric ZrC particle which was 377 MPa. The maximum strength of 935 MPa was tested at $1200^{\circ}C$ on the W composite specimen containing nanosized ZrC particle.

• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1044-1055
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• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.538-545
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• 2009

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40 and 45vol.% of Zirconium Diboride (hereafter, $ZrB_2$) powders with Silicon Carbide (hereafter, SiC) matrix. The SiC-$ZrB_2$ composites, the sintered compacts, were produced through Spark Plasma Sintering (hereafter, SPS), and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffractometer (hereafter, XRD) analysis. The relative density of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, and SiC+45vol.%$ZrB_2$ composites were 88.64%, 76.80%, 79.09% and 88.12%, respectively. The XRD phase analysis of the sintered compacts demonstrated high phase of SiC and $ZrB_2$ but low phase of $ZrO_2$. Among the SiC-$ZrB_2$ composites, the SiC+35vol.%$ZrB_2$ composite had the lowest flexural strength, 148.49MPa, and the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 204.85MPa, at room temperature. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites were $6.74\times10^{-4}$, $4.56\times10^{-3}$, $1.92\times10^{-3}$, and $4.95\times10^{-3}\Omega{\cdot}cm$ at room temperature, respectively. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$ SiC+40vol.%$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites had Positive Temperature Coefficient Resistance (hereafter, PTCR) in the temperature range from $25^{\circ}C$ to $500^{\circ}C$. The V-I characteristics of the SiC+40vol.%$ZrB_2$ composite had a linear shape. Therefore, it is considered that the SiC+40vol.%$ZrB_2$ composite containing the most outstanding mechanical properties, high resistance temperature coefficient and PTCR characteristics among the sintered compacts can be used as an energy friendly ceramic heater or electrode material through SPS.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.964-968
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• 1997

Si(001)기판 위에 형성시킨 Zr-silicide의 전기적, 물리적 특성에 관한 연구를 하였다. Zr 박막은 전자빔 증착기를 사용하여 증착하였으며, 50$0^{\circ}C$ 열처리하여 Zr-silicide를 형성시켰다. 각 온도에서 열처리된 Zr-silicide시편의 상형성, 전기적 특성, 화학적 조성, 표면 및 계면 형상을 XRD, four-point probe, AES, TEM과 HRTEM으로 분석하였다. 분석 결과 $600^{\circ}C$부터 Zr과 Si기판의 계면에서 C49 ZrSi$_{2}$의 생성이 관찰되었다. Zr-Silicide박막의 비저항은 C49 ZrSi$_{2}$의 형성에 영향을 받는 것으로 관찰되었으며, 50$0^{\circ}C$ 열처리 후에는 184.3 $\mu$Ω-cm로 낮아졌으며, C49 ZrSi$_{2}$가 박막에 완전히 형성된 80$0^{\circ}C$ 열처리 후에는 32$\mu$Ω-cm의 낮은 저항을 나타내었다. 형성된 C49 ZrSi$_{2}$박막은 균질한 화학적 조성을 하고 있음을 AES 분석으로 확인하였다. Zr-silicide의 표면 및 계면의 형상을 TEM과 HRTEM으로 관찰하였으며, $600^{\circ}C$ 열처리 후에 계면에서 ZrSi$_{2}$의 상형성이 시작되는 것을 관찰하였다. 80$0^{\circ}C$ 열처리 후에도 계면과 표면형상은 비교적 균질한 형상이 유지되었음이 관찰되었으며, 이는 C49 ZrSi$_{2}$가 높은 온도에서도 잘 응집되지 않으며 고온 안정성을 가지는 재료임이 관찰되었다.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.315-323
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• 1991

The preparation of zirconium carbide powders by the halogenide process of ZrCl4-C-Mg system (1:1:2, molar ratio) was studied between 300。 and 120$0^{\circ}C$ under Ar gas flow (200 mι/min). The formation mechanism and kinetics of zirconium carbide and characteristics of the synthesized powder were examined by TG-DTA, XRD, SEM and PSA. 1) The formation mechanism of zirconium carbide were as follows, above 30$0^{\circ}C$ ZrCl4(S)+Mg(s)longrightarrowZrCl2(s)+MgCl2(s) above 40$0^{\circ}C$ ZrCl2(S)+Mg(s)longrightarrowZr(s)+MgCl2(s) above 50$0^{\circ}C$ Zr(s)+C(s)longrightarrowZrC(s) 2) The apparent activation energy of the reduction-carbonization at temperature of 800$^{\circ}$to 100$0^{\circ}C$ was 11.9 kcal/mol. 3) The lattice parameter and the crystallite size of ZrC which was produced from the mixture powder of ZrCl4, C and Mg (1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were 4.700A and 180A, respectively. 4) The powders obtained from the mixture powder of ZrCl4, C and Mg(1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were agglomerate with the average size of about 13${\mu}{\textrm}{m}$ in SEM micrograph.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.145-151
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• 2000

The sintering behaviour of monolithic zirconium diboride (ZrB$_{2 }$) and ZrB$_{2 }$-based composite ZrB$_{2 }$-ZrC were studied using a pressureless sintering technique. The specimens were prepared using commercially available ZrB$_{2 }$ and ZrC powder which were pressed and subjected to pressureless sintering. The effects of lanthanum and neodymium used as sintering aids in the sintering processes were investigated. The sintered specimens were characterized using X-ray diffraction analysis and scanning electron microscopy. The ZrB$_{2 }$ specimen prepared using and addition of 1 wt% lanthanum and pressurelessly sintered at $2200^{\circ}C$ showed the maximum relative density of 96%. The ZrB$_{2 }$-ZrC composite specimen without the addition of any sintering aids exhibits the maximum sintered density but contains significantly detectable amount of secondary phase.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.446-450
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• 2013

TRISO coated particles with a ZrC barrier layer were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for a use in a very high temperature gas-cooled reactor (VHTR). The ZrC layer was deposited by the reaction between $ZrCl_4$ and $CH_4$ gases at $1500^{\circ}C$ in an $Ar+H_2$ mixture gas. The amount of free carbon codeposited with in ZrC was changed by controlling the dilution gas ratio. Near-stoichiometric ZrC phase was also deposited when an impeller was employed to a $ZrCl_4$ vaporizer which effectively inhibited the agglomeration of $ZrCl_4$ powders during the deposition process. A near-stoichiometric ZrC coating layer had smooth surface while ZrC containing the free carbon had rough surface with tumulose structure. Surface roughness of ZrC increased further as the amount of free carbon increased.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.582-586
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• 2001

방전 플라즈마 소결법을 이용하여 ZrB$_2$-ZrC 복합체를 소결하여 소결 거동과 미세구조에 대하여 조사하였다. 소결 조제로서 란타늄을 첨가하였을 경우에 첨가하지 않았을 경우보다 더 낮은 온도에서 소결 수축이 시작되었으며, 180$0^{\circ}C$에서 거의 치밀화가 완성되었다. 란타늄은 방전플라즈마 소결시 초기 분말 간 액상 형성으로 물질이동을 가속화하여 ZrB$_2$-ZrC 복합체의 치밀화에 커다란 기여를 하며, 냉각 시에 재결정화하여 결정립계와 결정립 삼중점에 란타늄이 포함된 이차상을 형성하는 것으로 확인되었다. 또한 ZrB$_2$-ZrC는 강한 공유결합성 재료임에도 불구하고 미세 구조 내에 잘 발달된 전위 구조를 형성하고 있음을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.245-249
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• 2008

The SiC and ZrC are critical and essential materials in TRISO coated fuel particles since they act as protective layers against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. However, SiC and ZrC have critical disadvantage that SiC loses chemical integrity by thermal dissociation at high temperature and mechanical properties of ZrC are weaker than SiC. In order to complement these problems, we made new combinations of the coating layers that the ZrC layers composed of SiC. In this study, after Silicon carbide(SiC) were chemically vapor deposited on graphite substrate, Zirconium carbide(ZrC) were deposited on SiC/graphite substrate by using Zr reaction technology with Zr sponge materials. The different morphologies of sub-deposited SiC layers were correlated with microstructure, chemical composition and mechanical properties of deposited ZrC films. Relationships between deposition pressure and microstructure of deposited ZrC films were discussed. The deposited ZrC films on SiC of faceted structure with smaller grain size has better mechanical properties than deposited ZrC on another structure due to surface growth trend and microstructure of sub-deposited layer.