• 제목/요약/키워드: active layer

검색결과 1,387건 처리시간 0.035초

능동층 구조에 따른 비정질산화물반도체 박막트랜지스터의 특성 (The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure)

  • 이호년
    • 한국산학기술학회논문지
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    • 제10권7호
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    • pp.1489-1496
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    • 2009
  • 비정질 인듐-갈륨-아연 산화물 박막트랜지스터를 모델링 하여서, 능동층의 구조, 두께, 평형상태의 전자밀도에 대응하는 박막트랜지스터의 특성을 연구하였다. 단일 능동층 박막트랜지스터의 경우, 능동층이 얇을 때 높은 전계효과이동도를 보였다. 문턱전압의 절대값은 능동층의 두께가 20 nm일 때 최저치를 보였으며, 문턱전압이하 기울기는 두께에 대한 의존성을 보이지 않았다. 복층구조 능동층의 경우, 하부의 능동층이 높은 평형상태 전자밀도를 가질 때보다 우수한 스위칭 특성을 보였다. 이 경우에도 능동층의 두께가 얇을 때에 높은 전계효과 이동도를 보였다. 높은 평형상태 전자밀도의 능동층의 두께를 증가시키면 문턱전압은 음의 방향으로 이동하였다. 문턱전압이하 기울기는 능동층의 구조에 대하여 특별한 의존성을 보이지 않았다. 이상과 같은 데이터는 산화물반도체 박막트랜지스터 능동층의 구조, 두께, 도핑비율을 최적화함에 효과적으로 사용될 것으로 기대된다.

Solution-based Multistacked Active Layer IGZO TFTs

  • Kim, Hyunki;Choi, Byoungdeog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.351.1-351.1
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    • 2014
  • In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

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능동구속감쇠 기법을 이용한 복합적층보의 진동 제어 (Vibration Control of Laminated Composite Beams Using Active Constrained Layer Damping Treatment)

  • 강영규;최승복
    • 한국소음진동공학회논문집
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    • 제11권7호
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    • pp.261-266
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    • 2001
  • The flexural vibration of laminated composite beams with active and passive constrained layer damping has been investigated to design a structure with maximum possible damping capacity. The equations of motion are derived fro flexural vibrations of symmetrical,. multi-layer laminated beams. The damping ratio and model damping of the first bending mode are calculated by means of iterative complex eigensolution method. The direct negative velocity feedback control is used for the active constrained layer damping. It is shown that the flexible laminated beam is more effective in the vibration control for both active and passive constrained layer damping. and this paper addresses a design strategy of laminated composite under flexural vibrations with constrained layer damping.

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위상 최적화를 이용한 능동 감쇠층의 설계 (Design of an Active Damping Layer Using Topology Optimization)

  • 김태우;김지환
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2003년도 추계학술대회논문집
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    • pp.660-664
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    • 2003
  • The optimal thickness distribution of an active damping layer is sought so that it satisfies a certain constraint on the dynamic performance of a system minimizing control efforts. To obtain a topologically optimized configuration, which includes size and shape optimization, thickness of the active damping layer is interpolated using linear functions. With the control energy as the objective function to be minimized, the state error energy is introduced as the dynamic performance criterion for the system and used lot a constraint. The optimal control gains are evaluated from LQR simultaneously as the optimization of the layer position proceeds. From numerical simulation, the topologically optimized distribution of the active damping layer shows the same dynamic performance and cost as the Idly covered counterpart, which is optimized only in terms of control gains, with less amount of the layer.

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Ground Penetrating Radar Imaging of a Circular Patterned Ground near King Sejong Station, Antarctica

  • Kim, Kwansoo;Ju, Hyeontae;Lee, Joohan;Chung, Changhyun;Kim, Hyoungkwon;Lee, Sunjoong;Kim, Jisoo
    • 지질공학
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    • 제31권3호
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    • pp.257-267
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    • 2021
  • Constraints on the structure and composition of the active layer are important for understanding permafrost evolution. Soil convection owing to repeated moisture-induced freeze-thaw cycles within the active layer promotes the formation of self-organized patterned ground. Here we present the results of ground penetrating radar (GPR) surveys across a selected sorted circle near King Sejong Station, Antarctica, to better delineate the active layer and its relation to the observed patterned ground structure. We acquire GPR data in both bistatic mode (common mid-points) for precise velocity constraints and monostatic mode (common-offset) for subsurface imaging. Reflections are derived from the active layer-permafrost boundary, organic layer-weathered soil boundary within the active layer, and frozen rock-fracture-filled ice boundary within the permafrost. The base of the imaged sorted circle possesses a convex-down shape in the central silty zone, which is typical for the pattern associated with convection-like soil motion within the active layer. The boundary between the central fine-silty domain and coarse-grained stone border is effectively identified in a radar amplitude contour at the assumed active layer depth, and is further examined in the frequency spectra of the near- and far-offset traces. The far-offset traces and the traces from the lower frequency components dominant on the far-offset traces would be associated with rapid absorption of higher frequency radiowave due to the voids in gravel-rich zone. The presented correlation strategies for analyzing very shallow, thin-layered GPR reflection data can potentially be applied to the various types of patterned ground, particularly for acquiring time-lapse imaging, when electric resistivity tomography is incorporated into the analysis.

High performance of inverted polymer solar cells

  • Lee, Hsin-Ying;Lee, Ching-Ting;Huang, Hung-Lin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.61.2-61.2
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    • 2015
  • In the past decades, green energy, such as solar energy, wind power, hydropower, biomass energy, geothermal energy, and so on, has been widely investigated and developed to solve energy shortage. Recently, organic solar cells have attracted much attention, because they have many advantages, including low-cost, flexibility, light weight, and easy fabrication [1-3]. Organic solar cells are as a potential candidate of the next generation solar cells. In this abstract, to improve the power conversion efficiency and the stability, the inverted polymer solar cells with various structures were developed [4-6]. The novel cell structures included the P3HT:PCBM inverted polymer solar cells with AZO nanorods array, with pentacene-doped active layer, and with extra P3HT interfacial layer and PCBM interfacial layer. These three difference structures could respectively improve the performance of the P3HT:PCBM inverted polymer solar cells. For the inverted polymer solar cells with AZO nanorods array as the electronic transportation layer, by using the nanorod structure, the improvement of carrier collection and carrier extraction capabilities could be expected due to an increase in contact area between the nanorod array and the active layer. For the inverted polymer solar cells with pentacene-doped active layer, the hole-electron mobility in the active layer could be balanced by doping pentacene contents. The active layer with the balanced hole-electron mobility could reduce the carrier recombination in the active layers to enhance the photocurrent of the resulting inverted polymer solar cells. For the inverted polymer solar cells with extra P3HT and PCBM interfacial layers, the extra PCBM and P3HT interfacial layers could respectively improve the electron transport and hole transport. The extra PCBM interfacial layer served another function was that led more P3HT moving to the top side of the absorption layer, which reduced the non-continuous pathways of P3HT. It indicated that the recombination centers could be further reduced in the absorption layer. The extra P3HT interfacial layer could let the hole be more easily transported to the MoO3 hole transport layer. The high performance of the novel P3HT:PCBM inverted polymer solar cells with various structures were obtained.

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Analysis and active control for wind induced vibration of beam with ACLD patch

  • Li, Jinqiang;Narita, Yoshihiro
    • Wind and Structures
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    • 제17권4호
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    • pp.399-417
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    • 2013
  • The structural vibration suppression with active constrained layer damping (ACLD) was widely studied recently. However, the literature seldom concerned with the vibration control on flow-induced vibration using active constrained layer. In this paper the wind induced vibration of cantilevered beam is analyzed and suppressed by using random theory together with a velocity feedback control strategy. The piezoelectric material and frequency dependent viscoelastic layer are used to achieve effective active damping in the vibration control. The transverse displacement and velocity in time and frequency domains, as well as the power spectral density and the mean-square value of the transverse displacement and velocity, are formulated under wind pressure at variable control gain. It is observed from the numerical results that the wind induced vibration can be significantly suppressed by using a small outside active voltage on the constrained layer.

Influence of Growth Temperature for Active Layer and Buffer Layer Thickness on ZnO Nanocrystalline Thin Films Synthesized Via PA-MBE

  • Park, Hyunggil;Kim, Younggyu;Ji, Iksoo;Kim, Soaram;Lee, Sang-Heon;Kim, Jong Su;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.203.1-203.1
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    • 2013
  • Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

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Improved Bias Stress Stability of Solution Processed ITZO/IGZO Dual Active Layer Thin Film Transistor

  • Kim, Jongmin;Cho, Byoungdeog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.215.2-215.2
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    • 2015
  • We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

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동적 콘 관입기를 이용한 활동층 심도평가 (Evaluation of Active Layer Depth using Dynamic Cone Penetrometer)

  • 홍원택;강성훈;박근보;이종섭
    • 한국지반환경공학회 논문집
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    • 제17권1호
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    • pp.49-54
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    • 2016
  • 동토지반을 구성하는 지층 중 표층에 분포하는 활동층은 계절에 따라 동결과 융해를 반복하여 지표면의 동상을 야기한다. 동상 높이는 활동층의 두께에 큰 영향을 받으므로, 동토지반 상부 인프라시설의 안전한 설계 및 시공을 위하여 활동층의 두께 산정은 매우 중요한 부분을 차지한다. 본 연구에서는 경량화된 원위치 관입시험 방법인 동적 콘 관입기를 이용하여 동토지반에서 활동층이 분포하는 심도를 평가하고자 하였다. 동적 콘 관입시험을 적용하기 위한 대상현장으로서 알래스카에 위치한 솔로몬 지역의 동토지반이 선택되었으며, 해당 지역의 두 개소에서 지중온도계측 및 동적 콘 관입시험이 수행되었다. 적용실험 결과 동적 콘 관입시험으로부터 획득된 동적 콘 관입지수는 활동층 및 영구동토층에서 서로 상이한 값을 나타내는바 동적 관입특성에 따른 활동층과 영구동토층의 경계부 심도가 산정되었으며, 경계부 심도에서 아이스 렌즈층으로 판단되는 구간이 감지되었다. 해당 개소에서 획득된 지중온도분포도에서 영상 및 영하 온도의 경계 심도는 본 연구의 동적 콘 관입시험으로부터 획득된 활동층 분포 심도와 부합하는 결과를 보였다. 본 연구에서 적용된 동적 콘 관입기는 대형장비의 접근 및 적용에 한계가 있는 극한지 동토 지역의 활동층 심도평가를 위하여 활용될 수 있을 것이라 기대된다.