• The Journal of Korean Academy of Prosthodontics
• /
• v.40 no.6
• /
• pp.590-596
• /
• 2002

The resin : metal interface is at the basis of most bonding failures in resin-bonded prosthesis. Although debonding has been a problem with adhesive fixed partial dentures, various dentists classify them as long-term restorations. The advantages of resin-bonded fixed partial dentures include minimal tooth reduction and the possibility of rebonding. if resin-bonded protheses can be easily rebounded, it is of clinical importance to know if the lutingagents rebond as well the second time as they did originally. Several retentive systems for resin-to-metal bonding have recommended. Treatments such as electrolytic etching and silicone coating, despite the good result of bond strength, have proved to be time-consuming and technique-sensitive. Therefore a simple and more reliable method is desirable. This study evaluated the effect of metal surface treatments on the rebond strength of panavia 21 cement to a nickel-chromium(Ni-Cr) alloy. The samples were received the following surface treatments : Group No.1 (control or served as the control) treatment with sandblasting with 50um aluminum oxide and ultrasonically cleaned for 10minutes in double-deionized water, Group No.2 were no surface treatments. Group No.3 were treated with metal primer. Group No.4 were treated with sandblasting as previously described, and then metal priming. From the analysis of the results, the following conclusions were drawn. 1. Sandblasting and metal priming appears to be an effective method for treatment of metal after accidental debonding. 2. Group without surface treatment had significantly lower bond strengths compared with other groups. 3. The combination of sandblasting and metal priming may not develop superior bonding strengths compared with other techniques that used the Ni-Cr alloys. 4. Combination of cohesive and adhesive failures were the most common type observed. The results support the use of sandblasting as a viable procedure when rebonding accidentally lost adhesive partial denture. We concluded that sandblasting and metal priming of metal surface before bonding could provide the adequate bond strength during rebonding of resin-bonded fixed partial denture.

• Journal of the Korean Ceramic Society
• /
• v.38 no.12
• /
• pp.1093-1096
• /
• 2001

The Solid solution of A $l_2$ $O_3$ into ZnO can be defined by the substitution reaction of Al$\^$3+/ ions into the Zn$\^$2+/ sites of ZnO crystal lattice, the tetrahedral interstices composed of four neighbor oxygen ions in the wurtzite structure. Since the reaction either creates new zinc vacancies or consumes the oxygen vacancies, it should be in equilibrium with ZnO nonstoichiometry and disorder reactions. The relationships make oxygen partial pressure P$\sub$o2/ control the concentrations of the vacancies and consequently limit the Al solubility in ZnO, [Al$\sub$zn/]$\sub$max/. This paper firstly reports with a refined model for defect quilibria in ZnO that the solubility decrease with the increase of P$\sub$o2/, [Al$\sub$zn/]$\sub$max/ P$\sub$o2/$\^$-1/4/.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.3
• /
• pp.124-129
• /
• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.40-47
• /
• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• The Journal of Korean Academy of Prosthodontics
• /
• v.41 no.3
• /
• pp.379-386
• /
• 2003

Statement of problem. Resin cements are widely used in adhesive dentistry specially on all ceramic restorations. It is needed to find out adequate bonding strength between different porcelain surface treatments, commercially available porcelains, and different resin cement systems. Purpose. The purpose of this study was to evaluate shear bond strength of resin cements bonded to porcelains in three different modalities; 5 different porcelain surface treatments, 3 different resin cement systems and 3 different commercially available pressable porcelains. Material and Method. This study consisted of 3 parts. Part I examined the effect of five different surface treatments on the pressable porcelain. Fifty discs (5 mm in diameter and 3 mm in height) of Authentic porcelain were randomly divided into 5 groups (n = 10). The specimens were sanded with 320 grit SiC paper followed by 600 grit SiC paper. The specimens were treated as follow: Group 1-Sandblasting (aluminum oxide) only, Group 2 - sandblasting/ silane, Group 3 - sandblasting/ acid etching/ silane, Group 4 - acid etching only, Group 5 - acid etching/ silane. Part II examined the shear bond strength of 3 different resin cement systems (Duolink, Variolink II, Rely X ARC) on acid etching/ silane treated Authentic pressable porcelain. Part 3 examined the shear bond strength of Duolink resin cement on 3 different pressable porcelains (Authentic, Empress I, Finesse). All cemented specimens were stored in distilled water for 2 hours and tested with Ultradent shear bond strength test jig under Universal Instron machine until fracture. An analysis of variance(ANOVA) test was used to evaluate differences in shear bond strength. Result. The shear bond strength test resulted in the following: (1) Acid etched porcelains recorded greater shear bond strength values to the sandblasted porcelains. (2) Silane treated porcelains recorded greater shear bond strength values to non-silane treated porcelains. (3) There was no significant difference between sandblasting/ acid etching/ silane treated and acid etching/ silane treated porcelains. However those values were much higher than other three groups. (4) The shear bond strength with Variolink II was lower than the value of Duolink or Rely X ARC. (5) The shear bond strength of Finesse was lower than the value of Authentic or Empress I.

• Restorative Dentistry and Endodontics
• /
• v.42 no.2
• /
• pp.125-133
• /
• 2017

Objectives: This study compared the effect of hexamethyldisiloxane (HMDSO) and ammonia ($NH_3$) plasmas on the bond strength of resin cement to fiber posts with conventional treatments. Materials and Methods: Sixty-five fiber posts were divided into 5 groups: Control (no surface treatment); $H_2O_2$ (24% hydrogen peroxide for 1 min); Blasting (blasting with aluminum oxide for 30 sec); $NH_3$ ($NH_3$ plasma treatment for 3 min); HMDSO (HMDSO plasma treatment for 15 min). After the treatments, the Ambar adhesive (FGM Dental Products) was applied to the post surface (n = 10). The fiber post was inserted into a silicon matrix that was filled with the conventional resin cement Allcem Core (FGM). Afterwards, the post/cement specimens were cut into discs and subjected to a push-out bond strength (POBS) test. Additionally, 3 posts in each group were evaluated using scanning electron microscopy. The POBS data were analyzed by one-way analysis of variance and the Tukey's honest significant difference post hoc test (${\alpha}=0.05$). Results: The Blasting and $NH_3$ groups showed the highest POBS values. The HMDSO group showed intermediate POBS values, whereas the Control and $H_2O_2$ groups showed the lowest POBS values. Conclusion: Blasting and $NH_3$ plasma treatments were associated with stronger bonding of the conventional resin cement Allcem to fiber posts, in a procedure in which the Ambar adhesive was used.

• Restorative Dentistry and Endodontics
• /
• v.41 no.2
• /
• pp.106-113
• /
• 2016

Objectives: This study evaluated the effects of different surface conditioning methods on the bond strength of orthodontic brackets to glazed full-zirconia surfaces. Materials and Methods: Glazed zirconia (except for the control, Zirkonzahn Prettau) disc surfaces were pre-treated: PO (control), polishing; BR, bur roughening; PP, cleaning with a prophy cup and pumice; HF, hydrofluoric acid etching; AA, air abrasion with aluminum oxide; CJ, CoJet-Sand. The surfaces were examined using profilometry, scanning electron microscopy, and electron dispersive spectroscopy. A zirconia primer (Z-Prime Plus, Z) or a silane primer (Monobond-S, S) was then applied to the surfaces, yielding 7 groups (PO-Z, BR-Z, PP-S, HF-S, AA-S, AA-Z, and CJ-S). Metal bracket-bonded specimens were stored in water for 24 hr at $37^{\circ}C$, and thermocycled for 1,000 cycles. Their bond strengths were measured using the wire loop method (n = 10). Results: Except for BR, the surface pre-treatments failed to expose the zirconia substructure. A significant difference in bond strengths was found between AA-Z ($4.60{\pm}1.08MPa$) and all other groups ($13.38{\pm}2.57-15.78{\pm}2.39MPa$, p < 0.05). For AA-Z, most of the adhesive remained on the bracket. Conclusions: For bracket bonding to glazed zirconia, a simple application of silane to the cleaned surface is recommended. A zirconia primer should be used only when the zirconia substructure is definitely exposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.158-161
• /
• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.11
• /
• pp.862-866
• /
• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.470-475
• /
• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.