• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.25-31
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• 2004

In this paper, we introduce kinetic Monte Carlo (kMC) methods for simulating diffusion process in nano-scale device fabrication. At first, we review kMC theory and backgrounds and give a simple point defect diffusion process modeling in thermal annealing after ion (electron) implantation into Si crystalline substrate to help understand kinetic Monte Carlo methods. kMC is a kind of Monte Carlo but can simulate time evolution of diffusion process through Poisson probabilistic process. In kMC diffusion process, instead of. solving differential reaction-diffusion equations via conventional finite difference or element methods, it is based on a series of chemical reaction (between atoms and/or defects) or diffusion events according to event rates of all possible events. Every event has its own event rate and time evolution of semiconductor diffusion process is directly simulated. Those event rates can be derived either directly from molecular dynamics (MD) or first-principles (ab-initio) calculations, or from experimental data.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.3
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• pp.271-277
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• 2013

Inconel 718 super alloy was aging heat treated at the temperature range from $675^{\circ}C$ to $785^{\circ}C$ for 5~40 hours after solution annealing at $1025^{\circ}C$ for 1 hour. The aging treated specimens were investigated microstructure, mechanical properties and thermal expansion/contraction. Precipitates appeared for a long time aging treatment were niobium carbide and also ${\gamma}^{\prime}$ phase. For the aging treatment time of 10 hours, the changes in strength and hardness with increasing aging treatment temperature showed the maximum value at the temperature of $725^{\circ}C$. This maximum value is to be related with the precipitation of ${\gamma}^{\prime}$ and ${\gamma}^{{\prime}{\prime}}$ phases. The decrease in strength, elongation and hardness during long time aging at $725^{\circ}C$ were thought to be induced from the coarsening of the grain size and the transformation of ${\gamma}^{{\prime}{\prime}}$ phase to ${\gamma}^{\prime}$ phase. For the specimens treated for 10 hours, impact energy showed constant value of ~105 J with increasing the aging temperature, however this value continuously decreased with elapsing time at the aging temperature of $725^{\circ}C$. It was found that the decrease in impact value was induced from the coarsening of grain size and the carbide coarsening. The coefficient of thermal expansion of aging treated Inconel 718 alloy increased with raising test temperature, and the coefficient was appeared $11.57{\sim}12.09{\mu}m/m{\cdot}^{\circ}C$ and $14.28{\sim}14.39{\mu}m/m{\cdot}^{\circ}C$, respectively, after heating to $150^{\circ}C$ and $450^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.929-933
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• 2010

Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.497-501
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• 1999

The changes of properties were studied for the polypropylene(PP)/Nylon6 blends containing different kinds of compatibilizer made by either reactive extrusion of solution reaction. The compatibilizers were PP grafted with maleic anhydride (MAH) made by reactive extrusion and solution reaction. The grafted MAH contents were 0.3 wt %, and 2.7 wt %, respectively. The composition of the PP/nylon6 blend was fixed at 75/25 by weight. Blending was carried out with twin-screw extruder (L/D=30, ${\psi}=30$) at 300 rpm. As the content of PP-g-MAH was increased, the crystallization peak of Nylon6 decreased gradually then finally disappeared. Disappearance of crystallization peak of Nylon6 was mostly affected by grafted MAH content rather than the preparation method and the amount of compatibilizer. The portion of Nylon6 that could not crystallize in its normal crystallization temperature crystallized together with PP at the crystallization temperature of PP. So called concurrent crystallization was observed. Meanwhile two more peaks were observed during heating cycle. One was exothermic peak at $193^{\circ}C$ near to crystallization temperature of Nylon6, the other was endothermic peak at $215^{\circ}C$ that was $5^{\circ}C$ lower than normal endothermic peak of Nylon6. To analyze the peaks, nylon6 was annealed in the differential scanning calorimeter. As a result, the peak at $193^{\circ}C$ was crystallization peak of imperfect crystalline of Nylon6 and the other peak at $215^{\circ}C$ was melting peak of imperfect crystalline of nylon6.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.23-34
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• 1992

In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${\bot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${\Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${\bot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${\Delta}R/R$) was $3.6{\sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.