• 한국재료학회지
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• 제15권3호
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• pp.183-188
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• 2005

It was studied in this article how the flexural strength of bare silicon chips is influenced by adopting dual wafer back-lapping process. The experimental results showed that an additional finishing process after the conventional grinding process improves the flexural strength of bare chips by more than 2-fold. In particular, this work showed that the proper removal of the grinding marks$(Ra=0.1\;{\mu}m)$existing on the wafer back-surface resulting from the grinding process significantly contiributes to the enhancement of chip strength.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• 한국정밀공학회지
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• 제21권10호
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• pp.26-33
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• 2004

Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• 전자공학회논문지A
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• 제29A권9호
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• pp.36-45
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• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• 한국통신학회논문지
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• 제27권4B호
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• pp.365-371
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• 2002

본 논문에서는 전자선 묘화 장비를 이용하여 게이트 길이가 0.2 $\mu\textrm{m}$ 이하인 밀리미터파용 전력 PHEMT 소자를 제작하고 DC 특성과 주파수 특성 그리고 전력 특성을 측정하고 분석하였다. PHEMT의 제작에 사용된 단위공정은 저 저항 오믹 접촉, 에어 브릿지 및 후면 가공 공정기술 등을 이용하였다. 제작된 전력용 PHEMT는 35 GHz의 중심주파수에서 4 dB의 S21 이득과 317 mS/mm의 최대 전달컨덕턴스 그리고 62 GHz의 차단주파수와 12G GHz의 최대 공진주파수를 나타내었다. 또한 측정된 전력 특성은 35.5 %의 드레인 효율과 16 dB의 최대 출력전력 그리고 4 dB의 전력 이득을 나타내었다.