• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.53-56
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• 2018

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.528-533
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• 2016

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 한국정보통신학회논문지
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• 제11권8호
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• pp.1544-1551
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• 2007

본 논문에서는 넓은 동작전압 범위와 저소비 전력 그리고 개선된 파워-업 특성을 가지는 캐스코드 전류 거울형 CMOS 밴드갭 기준전압 발생기의 스타트-업 회로를 제안하였다. 새롭게 제안된 스타트-업 회로는 기존의 스타트-업 회로에 비해 안정적인 파워-업 특성을 가지며 공급전압(VDDA)이 높아지더라도 밴드갭 기준전압 발생기 회로의 동작에 영향을 미치지 않는 것을 모의실험을 통하여 확인하였고 $0.18{\mu}m$ tripple-well CMOS 공정을 이용하여 테스트 칩을 제작하고 측정하였다. 측정 된 기준전압 Vref는 평균값이 738mV이고 $3{\sigma}$는 29.88mV이다.

• 항공우주기술
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• 제3권1호
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• pp.251-256
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• 2004

적외선 소자로부터 생성되는 신호와의 비교에 의한 잡음 특성의 향상, 즉 좋은 영상을 얻기 위해서 적외선 영상신호 취득회로(ROIC)에서는 안정적인 기준 전압원이 필요하다. 본 논문은 극저온인 77K에서 동작하는 적외선 영상신호 취득회로(readout integrated circuit)를 위한 밴드갭 기준회로에 대해서 제안하고 있다. 기본에 발표된 대부분의 밴드갭 기준회로는 실온에서 동작하는 것이며, 액체질소 온도 77K에서 동작하는 적외선 영상 ROIC에는 적합하지 않다. 본 논문에서는 극저온에서 동작하는 밴드갭 기준회로 설계를 위하여, 온도변화에 따른 사용되는 소자들의 parameter에 대한 특성을 살펴본 후, 이러한 특성들을 고려하여 밴드갭 기준 회로를 제안하였으며 이것은 그 실용 가능성을 입증하고 있다.

• 정보통신설비학회논문지
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• 제9권4호
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• pp.141-146
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• 2010

In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

• 대한전자공학회논문지SD
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• 제40권4호
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• pp.42-50
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• 2003

본 논문에서는 시스템의 클럭을 안정적으로 공급하는 집적화 한 내장형 RC oscillator의 구현에 관한 논문이다. 기존의 RC oscillator는 온도에 따라 주파수변화가 약 15%정도 변화가 있는데 이는 온도에 따른 저항값의 변화와 schmit trigger의 기준전압이 온도에 따라 변화하기 때문이다. 본 연구에서는 온도에 따른 주파수 변화를 최소화하는 방법으로 CMOS bandgap과 온도에 따른 전류의 변화를 이용하였다. CMOS bandgap으로 기준 전압을 얻고 온도에 따라 증가하는 전류원과 온도에 따라 감소 하는 전류원을 서로 합하면 온도에 따라 일정한 전류를 얻어 주파수의 변화를 약 3%이내로 유지하는 회로를 제안한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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• pp.609-611
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• 2006

This paper describes a CMOS sub-bandgap reference using Pseudo-Resistors which can be widely used in flash memory, DRAM, ADC and Power management circuits. Bandgap reference circuit operates weak inversion for reducing power consumption and uses Pseudo-Resistors for reducing the chip area, instead of big resistor. It is implemented in 0.35um Standard 1P4M CMOS process. The temperature coefficient is 5ppm/$^{\circ}C$ from $40^{\circ}C$ to $100^{\circ}C$ and minimum power supply voltage is 1.2V The core area is 1177um${\times}$617um. Total current is below 2.8uA and output voltage is 0.598V at $27^{\circ}C$.

• 한국정보기술학회 영문논문지
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• 제8권2호
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• pp.59-67
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• 2018

The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.425-430
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• 2003

A CMOS Voltage-Controlled Oscillator(VCO) for application at temperature stable system is designed. The VCO consists of bandgap voltage reference circuit, comparator, and voltage-to-current converter and the VCO has a temperature stable characteristics. The difference between simulated and calculated values is less than about 5% in output characteristics when the input voltage range is from 1V to 3.25V. The CMOS VCO has error less than about $\pm$0.85% in the temperature range from $-25^{\circ}C$ to $75^{\circ}C$.