• Journal of Ocean Engineering and Technology
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• v.24 no.6
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• pp.86-91
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• 2010

Superconductor material $Bi_2Sr_2Ca_2Cu_3O_x$(Bi-2223) powders were synthesized by ultrasonic spray pyrolysis method. It is clear that Bi-2223 phase more than Bi-2212 phase was acquired at sufficient synthesized time. Best condition for Bi-2223 phase was synthesizing temperature at $860^{\circ}C$. We also investigated the effects for concentrations and viscosities of starting liquid precursor as well as temperature distribution of reacting furnace. The size of synthesized powder was decreased by decreasing the concentration of starting liquid precursor. Modified reacting furnace with four different temperature heating zones gave us successful results for desirable nano-powder including $Bi_2Sr_2Ca_2Cu_3O_x$ phase. Citric acid addition to starting liquid precursor showed increasing of the size for synthesized powder. Bi-2223 single phase was acquired from Bi2223 and Bi-2212 mixed phases through heat treatment in box furnace at 24 hours.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.214-215
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• 2002

Generally uniform dose distribution is assumed to be formed in a target region when a conventional dose formation method using a broad proton beam, a fixed modulation technique, a bolus and an aperture is employed. However, actual situations differ. We usually find non-uniformity in the target region. This is due to the insertion of a range-compensating bolus before the patient. Since the range-compensating bolus has an irregular shape, the scattering in the bolus depends on the lateral position. Dose distribution is overlapping results of dose distribution of pencil-proton beams traversing different lateral positions of the bolus. The lateral extent of dose distribution of each pencil beam traversing the different position differs each other at the same depth in the target object. This is a cause of the non-uniformity of the dose distribution. Therefore the same lateral extent of dose distribution should be attained for different pencil beams at the same depth to obtain a uniform dose distribution. For that purpose, we propose here a bi-material bolus. The bi-material bolus consists of a low-Z material determining mainly the range loss and a high-Z material defining mainly the scattering in the bolus. After passing through the bi-material bolus, protons traversing different lateral positions will have different residual range yet with the same lateral spread at a certain depth. Using the optimized bi-material bolus, we can obtain a more uniform dose distribution in the target region as expected.

• Journal of Mechanical Science and Technology
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• v.15 no.8
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• pp.1079-1089
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• 2001

This paper proposes J and CTOD estimation schemes applied to fracture toughness testing, covering typical homogeneous and bi-material specimens. Recommendations are based on the plastic limit analysis (either slip line field or finite element limit analyses), assuming the rigid plastic material behavior. The main outcome of the present study is that the J and CTOD estimation schemes (both codified and non-codified), recommended for homogeneous specimens, can be equally used for bi-material specimens with interface cracks. The effect of yield strength mismatch in bi-material specimens on the J-integral CTOD is discussed.

• Journal of Powder Materials
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• v.3 no.4
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• pp.253-259
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• 1996

The efficiency of thermoelectric devices for different applications is known to depend on the thermoelectric effectiveness of the material which tends to grow with the increase of its chemical homogeneity. Thus an important goal for thermal devices is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification (melt spinning method) followed by hot pressing was investigated to produce homogeneous material. Characteristics of the material were examined with HRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as dopant ${CdCl}_{2}$ quantity and hot pressing temperature. Quenched ribbons are very brittle and consist of homogeneous $Bi_2Te_3$, ${Bi}_{2}{Se}_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 2.038$\times$$10^{-3}K^{-4}. The bending strength of the material hot pressed at 50$0^{\circ}C$ was 8.2 kgf/${mm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.151-152
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• 2006

Bi-Te thermoelectric powder was fabricated by mechanical alloying method for 1 to 10 hours under vacuum in planetary mill. We investigated the properties of mechanically alloyed Bi-Te powder by thermal analysis, X-ray diffractometer and FESEM with EDS Bi-Te raw material was formed to $Bi_2Te_3$ phase at condition over 3.5 hours of mechanical alloying time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.65-68
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• 1999

A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.17-17
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• 2009

We report the invention of a direct growth method termed On-Film Formation of Nanowire (OFF-ON) for making high-quality single-crystal nanowires, i.e. Bi and $Bi_2Te_3$, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal semi-metallic Bi and compound semiconductor $Bi_2Te_3$ nanowires from sputtered Bi and BiTe films after thermal annealing, respectively. The mechanism for nanowire growth is stress-induced mass flow along grain boundaries in the polycrystalline films. OFF-ON is a simple but powerful method for growing perfect single-crystal semi-metallic and compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date. Our results suggest that Bi and $Bi_2Te_3$ nanowires grown by OFF-ON can be an ideal material system for exploring their unique thermoelectric properties due to their high-quality single crystalline and high conductivity, which have consequence and relevance for high-efficiency thermoelectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.308-311
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• 2001

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure( $PO_3$ ). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.39-42
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• 2004

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature(Tsub) and ozone pressure(PO3). It is found out that these phases show similar Tsub and PO3 dependence, and that the stable regions of these phases are limited within very narrow temperature.