• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.6
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• pp.1198-1206
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• 2011

In this paper, a sensor bias estimation method with pseudo measurement for asynchronous multisensor systems is proposed. The proposed bias estimation method separates the local filter which estimates the target state with biased measurements into two parts, one is bias part, the other is target state part. By using these two parts, the algorithm generates the pseudo bias measurement for estimating bias, and then eliminates bias of local track through bias compensation. Finally, the proposed algorithm is evaluated by comparing with the existing EXX method.

• Atmosphere
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• v.28 no.4
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• pp.357-367
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• 2018

In this study, the temperature bias of aircraft observation was estimated through comparison with sonde observation prior to developing the temperature bias correction method at the Korea Institute of Atmospheric Prediction Systems (KIAPS). First, we tried to compare aircraft temperature with collocated sonde observations at 0000 UTC on June 22, 2012. However, it was difficult to estimate the temperature bias due to the lack of samples and the uncertainty of the sonde position at high altitudes. Second, we attempted a background innovation comparison for sonde and aircraft using KIAPS Package for Observation Processing (KPOP). The one month averaged background innovation shows the aircraft temperature have a warm bias against sonde for all levels. In particular, there is a globally distinct warm bias about 0.4 K between 200 hPa and 300 hPa corresponding to flight level. Spatially, most of the areas showed the warm bias except for below 300 hPa in some part of China at 0000 and 1200 UTC and below 850 hPa in Australia at 0000 UTC. In general, the temperature bias was larger at 1200 UTC than 0000 UTC. Based on the estimated temperature bias, we have applied the static bias correction method to the aircraft temperature observation. As a result, the warm bias of the aircraft temperature has decreased at most levels, but a slight cold bias has occurred in some areas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• The Journal of Asian Finance, Economics and Business
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• v.7 no.7
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• pp.303-308
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• 2020

Unlike previous studies of overconfidence bias that have been looking for causes of overconfidence bias in human cognitive error or in the desire to view oneself positively, this study presents the cognitive narrowing resulting from the social exclusion experience as the condition of overconfidence bias and investigates the mechanism of cognitive narrowing to overcome the negative emotions from social exclusion, and how overconfidence bias occur due to cognitive narrowing. Current study was performed with 94 undergraduate students. Participants were randomly assigned to social exclusion experience group or non-experience group. We analyzed how the degree of bias of overconfidence differs according to the social exclusion experience. The degree of overconfidence bias of the social exclusion experience group was higher than that of the non-experience group, and the difference was statistically significant. This study extends the concepts of escaping theory and cognitive narrowing to human cognitive bias and confirmed that social exclusion experience increased cognitive narrowing and overconfidence bias. Implications of this research and future research directions were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.492-492
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• 2012

RF biased inductively coupled plasma (ICP) has been widely used in various semiconductor etching processes and laboratory plasma researches. However, almost researches for the RF bias have been focused on the controls of dc self-bias voltages, even though the RF bias can change plasma parameters, such as electron temperature, plasma density, electron energy distribution (EED), and their spatial distributions. In this study, we report on the effect of the RF bias on the plasma parameters and the EEDs with various external parameters, such the RF bias power, the ICP power, the gas pressure, the gas mixture, and the frequency of RF bias. Our study shows the correlation between the RF bias and the plasma parameters and gives a crucial key for the understanding of collisionless electron heating mechanism in the RF biased ICP.

• Journal of Information Processing Systems
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• v.19 no.5
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• pp.641-651
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• 2023

Malicious hate speech and gender bias comments are common in online communities, causing social problems in our society. Gender bias and hate speech detection has been investigated. However, it is difficult because there are diverse ways to express them in words. To solve this problem, we attempted to detect malicious comments in a Korean hate speech dataset constructed in 2020. We explored bidirectional encoder representations from transformers (BERT)-based deep learning models utilizing hyperparameter tuning, data sampling, and logits ensembles with a label distribution. We evaluated our model in Kaggle competitions for gender bias, general bias, and hate speech detection. For gender bias detection, an F1-score of 0.7711 was achieved using an ensemble of the Soongsil-BERT and KcELECTRA models. The general bias task included the gender bias task, and the ensemble model achieved the best F1-score of 0.7166.

• The Research Journal of the Costume Culture
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• v.20 no.4
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• pp.594-603
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• 2012

This study aimed to investigate a bias pattern making method with geometrical approach. The bias-cut dress has soft silhouette of drape in the garment. However, the bias cut dress has problem of satisfying the intended garment size spec. This problem occurs from various sources. The main reason is that the bias-cut fabric tends to stretch on longitudinal direction and to shrink horizontal direction when it was hung on the body. The goal of this study was to develop a bias-cut dress pattern making method satisfying the intended garment size spec. The researchers developed the geometrical method of measuring dimensional change by calculating the compensation ratio of the fabric in true bias direction. The compensation ratio was calculated by applying draping ratio of the fabric. Three types of fabrics were used in the experiment. The warp and weft crossing angle of fabric was ranged from $78^{\circ}$ to $82^{\circ}$. The fabrics stretched longitudinally 6.9~9.9% and shrank horizontally 7.2~11.0%. The compensation ratio of the bias-cut pattern for sample dress was calculated for each fabric type. Two types of experimental bias-cut dress patterns were developed for each fabric. One pattern was made with applying full compensation ratio and the other one made with applying partial ratio of the fabric. Experimental dresses were made with these patterns. The results of the evaluation showed that the bias-cut dress pattern applying the partial compensation ratio was more appropriate than the pattern applying the full compensation ratio.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Journal of Sensor Science and Technology
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• v.28 no.5
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• Genomics & Informatics
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• v.5 no.3
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• pp.113-117
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• 2007

The development of microarray technology has facilitated the understanding of gene expression profiles. Despite its convenience, the cause of dye-bias that confounds data interpretation in dual-color DNA microarray experiments is not well known. In order to economize time and money, it is necessary to identify the cause of dye bias, since designing dye-swaps to reduce the dye-specific bias tends to be very expensive. Hence, we sought to determine the reliable cause of systematic dye bias after treating murine macrophage RAW 264.7 cells with 2-keto-3-deoxyoctonate (KDO), interferon-beta $(IFN-{\beta})$, and 8-bromoadenosine (8-BR). To find the cause of systematic dye bias from the point of view of fluorescence quenching, we examined the correlation between systematic dye bias and the proportion of each nucleotide in mRNA and oligonucleotide probe sequence. Cy3-dye bias was highly correlated with the proportion of adenines. Our results support the fact that systematic dye bias is affected by fluorescence quenching of each feature. In addition, we also found that the strength of fluorescence quenching is based on not only dye-dye interactions but also dye-nucleotide interactions as well.