• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.108-113
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• 2016

A miniaturized lab-scale Cu plating cell for the metallization of electronic devices was fabricated and its deposit uniformity and profile were investigated. The plating cell was composed of a polypropylene bath, an electrolyte ejection nozzle which is connected to a circulation pump. In deposit uniformity evaluation, thicker deposit was found on the bottom and sides of substrate, indicating the spatial variation of deposit thickness was governed by the tertiary current distribution which is related to $Cu^{2+}$ transport. The surface morphology of Cu deposit inside photo-resist pattern was controlled by organic additives in the electrolyte as it led to the flatter top surface compared to convex surface which was observed in the deposit grown without organic additives.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.961-968
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• 2016

The non-uniform distribution of contamination on insulator surface has appreciable effects on flashover voltage, and corresponding researches are valuable for the better selection of outdoor insulation. In this paper, two typical types of porcelain and glass insulators which are widely used in ac lines were taken as the research subjects, and their corrections of AC flashover voltage under non-uniform pollution were studied. Besides, their flashover characteristics under different ratio (T/B) of top to bottom surface salt deposit density (SDD) were investigated, including the analysis of flashover voltage, surface pollution layer conductivity and critical leakage current. Test results gave the modified formulas for predicting flashover voltage of the two samples, which can be directly applied in the transmission line design. Also, the analysis delivered that, the basic reason why the flashover voltage increases with the decrease of T/B, is due to the decrease of equivalent surface conductivity of the whole surface and the decrease of critical leakage current. This research will be of certain value in providing references for outdoor insulation selection, as well as in proposing more information for revealing pollution flashover mechanism.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.374-378
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• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 1999.10c
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• pp.169-174
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• 1999

The reclamation area of Saemangeum (Kunsan) located between 126$^{\circ}$10' -126$^{\circ}$50'E and and 35$^{\circ}$35'N -36$^{\circ}$05'N at the western coast of Korea. The construction of the 33km sea dike is building in the Saemangeum area. When the construction of the sea dike in the coastal region takes plase, there exists a certain amount of soil which is diffused by the tidal current. Behavior of the soil diffusion usually depends on its intrinsic characteristics, bathymetry, construction method and used mchinery. The amount of soil at the construction acts as a pollutant which is the cause of changing the marine environment. When the soil material is diffused , it may form a layer which obstructs the light passing into the sea and causes the extinction or alteration of the living beings on the sea bottom. The settlement of soil material could change the sea bottom deposit. The purpose of MITIGATION is to harmonize the development and the conservation of environment, to restrict environmental destruction and to reproduce the enviroment damaged by the construction in the coastal region. The purpose of this study is to find the method by which we minimize the anti-function of development in the coastal region. Tide and tidal current are calculated using a two-dimensional numerical model before the construction of sea dike in Saemangeum Bay. The numerical results are compared well with field observations. On the basis of these results, we caculated the tide and tidal current after the construction of the sea dike in order to investigate the change of the tide and tidal current after the construction of the sea dike. Moreover, we calculated the tide and tidal current after the construction of submerged breakwater in order to preserve the enviornmental condition of creature habitat . We compared the tide and tidal current before and after the construction of submerbed breakwater, to investigate the possbility of MITIGATION in the fisheries.

• Journal of the Korean earth science society
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• v.23 no.3
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• pp.259-269
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• 2002

Based on sedimentary structures, degree of bioturbation, and internal erosional layers, the deep-sea core sediments in the East Sea (Ulleung and Yamato basins) and the Northwestern Pacific Ocean (Shikoku Basin) can be divided into two parts (upper and lower) with the boundary of around 10,000 years B.P. in age. The upper part of core KT94-10 from Shikoku Basin is characterized by low sedimentation rate, internal erosion layer, high degree of bioturbation and cross-lamination structures. It can be interpreted as the bottom-current deposits which show some different characteristics from turbidite or hemipelagic sediment. However, its lower part consists of highly bioturbated, massive mud, suggesting that it be not related to the influence of bottom current. On the other hand, the cores in Ulleung and Yamato basins do not show any evidence of bottom-current deposits: their upper parts consist of bioturbated mud, and lower parts are characterized by laminated mud with pyrite filaments, indicating anaerobic condition. Consequently, these sedimentological characteristics suggest that deep-sea circulation would be changed from slow-moving to fast-moving one at this bounding time commonly in the Northwestern Pacific Ocean and the East Sea. Also, even in the same time, the deep-sea circulation in the Northwestern Pacific area would be relatively faster than that in the East Sea.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1119-1122
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• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.2
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• pp.127-137
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• 2019

Zr electrorefining is demonstrated herein using Zirlo tubes in a chloride-fluoride mixed molten salt in the presence of $AlF_3$. Cyclic voltammetry reveals a monotonic shift in the onset of metal reduction kinetics towards positive potential and an increase in intensity of the additional peaks associated with Zr-Al alloy formation with increasing $AlF_3$ concentration. Unlike the galvanostatic deposition mode, a radial plate-type Zr growth is evident at the top surface of the salt during Zr electrorefining at a constant potential of -1.2 V. The diameter of the plate-type Zr deposit gradually increases with increasing $AlF_3$ concentration. Scanning electron microscopy-energy-dispersive X-ray spectroscopy (SEM-EDX) and X-ray photoelectron spectroscopy (XPS) analyses for the plate-type Zr deposit show that trace amount of Al is incorporated as Zr-Al alloys with different chemical compositions between the top and bottom surface of the deposit. Addition of $AlF_3$ is effective in lowering the residual salt content in the deposit and in improving the current efficiency for Zr recovery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.