• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.2-244.2
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• 2013

Contact Pattern을 Plasma Etching을 통해 Pattering 공정을 진행함에 있어서 Plasma 내에 존재하는 High Energy Ion 들의 Bombardment 에 의해, Contact Bottom 의 Silicon Lattice Atom 들은 Physical 한 Damage를 받아 Electron 의 흐름을 방해하게 되어, Resistance를 증가시키게 된다. 또한 Etchant 로 사용되는 Fluorine 과 Chlorine Atom 들은, Contact Bottom 에 Contamination 으로 작용하게 되어, 후속 Contact 공정을 진행하면서 증착되는 Ti 나 Co Layer 와 Si 이 반응하는 것을 방해하여 Ohmic Contact을 형성하기 위한 Silicide Layer를 형성하지 못하도록 만든다. High Aspect Ratio Contact (HARC) Etching 을 진행하면서 Contact Profile을 Vertical 하게 형성하기 위하여 Bias Power를 증가하여 사용하게 되는데, 이로부터 Contact Bottom에서 발생하는 Etchant 로 인한 Damage 는 더욱 더 증가하게 된다. 이 Damage Layer를 추가적인 Secondary Damage 없이 제거하기 위하여 본 연구에서는 원자층 식각방법(Atomic Layer Etching Technique)을 사용하였다. 실험에 사용된 원자층 식각방법을 이용하여, Damage 가 발생한 Si Layer를 Secondary Damage 없이 효과적으로 Control 하여 제거할 수 있음을 확인하였으며, 30 nm Deep Contact Bottom 에서 Damage 가 제거될 수 있음을 확인하였다. XPS 와 Depth SIMS Data를 이용하여 상기 실험 결과를 확인하였으며, SEM Profile 분석을 통하여, Damage 제거 결과 및 Profile 변화 여부를 확인하였으며, 4 Point Prove 결과를 통하여 결과적으로 Resistance 가 개선되는 결과를 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.988-991
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• 2011

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.2
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• pp.86-93
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• 2009

Elastomeric O-rings have been the most common seals due to their excellent sealing capacity, and availability in costs and sizes. One of the critical applications of O-ring seals is solid rocket motor joint seal where the operating hot gas must be sealed during the combustion. This has long been a design issue to avoid the system failure. For laterally constrained, squeezed and pressurized condition, deformed shape of O-ring was measured by computed tomography method and CCD laser sensor, compared with numerical calculations. As clearance gap changes, sealing performance had been evaluated on peak contact stresses at top, bottom and side contact surfaces. As clearance gap increases, peak contact stresses and contact widths in top and side contact surfaces increase, and the asymmetry of stress distributions is promoted due to pressure increase. It is suggested that peak stress of bottom contact surface can be approximated by simple superposition of peak ones due to squeeze and pressure. Under pressurized condition, sealing performance is dependent on not peak stresses of bottom and side contact surfaces but that of top.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.11
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• pp.92-99
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• 1996

The contact pressure in jointed plates was measured by means of an improved ultrasonic technique. In order to get calibration curve, the relationship between contact pressure and ratio of boundary and bottom echo of normal beam probes were obtained for the calibration blocks with various surface roughness. The ratio of boundary and bottom echoes were measured for the upper/under plates locally compressed with uniform pressure, and the distribution of contact pressure was obtaines. The measured pressure has a good agreement with results of FEM analysis. Thus the proposed ultrasonic method in this work is very useful to measure the contact pressure.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.23 no.2
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• pp.103-110
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• 2011

A two-dimensional immiscible droplet deformation phenomena on moving wall in a channel has been investigated by using lattice Boltzmann method involving two-phase model. The dependence of the deformation of the droplet with different sizes on the contact angle and the velocity of bottom wall has studied. When the bottom wall starts to move, the deformation of the droplet occurs. For the largest bottom wall velocity, eventually, the deformation of the droplet is classified into the three patterns according to the contact angle.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1001-1007
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• 2002

In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300$\AA$-700$\AA$ was suitable, and that the bottom contact was more feasible for hig Performance pentacene OTFT.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.05a
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• pp.780-785
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• 2001

A method for accurate measurement of the contact force in the current collection system of the high-speed railway is developed. In order to measure the contact force with minimal modifications to the pantograph, strain gauges are attached to the bottom of the contact strip. An algorithm for deriving the magnitude and stagger of the contact force from the bending strain measurements is devised. For the sample pantograph, the static contact forces are measured to within ${\pm}$5 % error for the magnitude and ${\pm}$ 2cm error for the stagger. For dynamic contact force measurement, it is found that the contact strip can the regarded as a rigid body for the contact frequency of less than 15 ㎐.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.2C
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• pp.105-115
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• 2008

The records of field instrumentation, which have been performed on the pneumatic caisson used for substructure of the Youngjong Grand Bridge, were analyzed to investigate the ground contact pressure under rigid foundation of large pneumatic caisson embedded in various ground layers. During sinking the pneumatic caisson, the resisting force was mobilized against sinking the caisson at the contact area between bottom of the caisson and the ground. The resisting force could be measured by the reaction force gauges instrumented under the edge of bottom of the pneumatic caisson. And the ground contact pressure could be estimated by use of the measuring records of the resisting force. The ground contact pressure under rigid foundation of large pneumatic caisson shows concave distribution on bedrock, while convex distribution was shown in marine deposit soil layer as well as weathered rock layer. And, the ground contact pressure in various ground layers was distributed axis-symmetrically. The distribution shape of the ground contact pressure determined by the maximum pressure acting on foundation of the large pneumatic caisson showed good coincidence with the distribution shape proposed for rigid foundation by Kgler(1936) and Fang(1991).

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.1
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• pp.93-98
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• 2013

In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the characteristics of organic transistor, we tested transistor's mobility and output values with organic transistor's electrode structures. As a results, the mobility of top contact was $8{\times}10^{-3}[cm^2V^{-1}s^{-1}]$, that of bottom contact was $2{\times}10^{-4}[cm^2V^{-1}s^{-1}]$. Also, off current of bottom contact was increased. Therefore, we recommend the top contact electrode structure of organic transistor.