• Title/Summary/Keyword: class V

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A confocal microscopic study of dentinal infiltrations in one-bottle adhesive systems bonded to Class V cavities

  • Kim, Hyung-Su;Park, Sung-Ho
    • Proceedings of the KACD Conference
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    • 2001.11a
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    • pp.576.2-576
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    • 2001
  • The purpose of this study was to evaluate the effect of dentinal sclerosis and tubular orientation on Class V restoration bonded with three dentin bonding agents using confocal laser scanning microscope(CLSM). Class V cavities were prepared from freshly extracted caries-free human teeth. thirty of these cavities were divided into two groups based upon the status of class V cavities: Group 1, cervical abrasive lesions without preparation; Group 2, artificially-prepared wedge-shaped cavities.(omitted)

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Analysis of Electric Shock Accident on 4.16 kV Class Circuit breaker for Power Plant (발전소용 4.16 kV급 차단기에서 감전사고 사례 분석)

  • Park, Nam-Kyu;Song, Jae-Yong;Kim, Jin-Pyo;Goh, Jae-Mo
    • Journal of the Korean Society of Safety
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    • v.29 no.4
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    • pp.54-60
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    • 2014
  • This paper describes electric shock accidents on a 4.16 kV class circuit breaker for power plant. Electric shock accidents mostly involve damage of human life, in comparison with electrical fire, rate of human death tend to be higher in electric shock accidents. Specially, in a high voltage facilities rate of human death comprised about 43.7% by electric shock accidents. If electric shock accidents happen in a 4.16 kV class circuit breaker for power plant, then the power plant discontinue power production. Electric shock accidents in a power plant have a great ripple effect such as an electric power shortage. In this paper, we analyzed electric shock accidents on a 4.16 kV class circuit breaker for power plant. From the analysis results, we confirmed a cause of electric shock accidents on a 4.16 kV class circuit breaker, it happened by defect of interlock equipment or occurrence of breakdown between first feeder contactor and shielding plate. In order to reduce electric shock accidents on a 4.16 kV class circuit breaker, the power plant should consider improvement of interlock equipment and insulation of feeder contactor in circuit breaker.

A Class E Power Oscillator for 6.78-MHz Wireless Power Transfer System

  • Yang, Jong-Ryul
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.220-225
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    • 2018
  • A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

SA-SUPPLEMENT SUBMODULES

  • Durgun, Yilmaz
    • Bulletin of the Korean Mathematical Society
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    • v.58 no.1
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    • pp.147-161
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    • 2021
  • In this paper, we introduced and studied sa-supplement submodules. A submodule U of a module V is called an sa-supplement submodule in V if there exists a submodule T of V such that V = T + U and U ∩ T is semiartinian. The class of sa-supplement sequences ������ is a proper class which is generated by socle-free modules injectively. We studied modules that have an sa-supplement in every extension, modules whose all submodules are sa-supplement and modules whose all sa-supplement submodules are direct summand. We provided new characterizations of right semiartinian rings and right SSI rings.

Preparation and Electrochemical Performance of 1.5 V and 3.0 V-Class Primary Film Batteries for Radio Frequency Identification (RFID)

  • Lee, Young-Gi;Choi, Min-Gyu;Kang, Kun-Young;Kim, Kwang-Man
    • Journal of Electrochemical Science and Technology
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    • v.1 no.1
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    • pp.39-44
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    • 2010
  • 1.5 V and 3.0 V-class film-type primary batteries were designed for radio frequency identification (RFID) tag. Efficient fabrication processes such as screen-printings of conducting layer ($25{\mu}m$), active material layer ($40{\mu}m$ for anode and $80{\mu}m$ for cathode), and electrolyte/separator/electrolyte layer ($100{\mu}m$), were adopted to give better performances of the 1.5 V-class film-type Leclanch$\acute{e}$ primary battery for battery-assisted passive (BAP) RFID tag. Lithium (Li) metal is used as an anode material in a 3.0 V-class film-type $MnO_2||$Li primary battery to increase the operating voltage and discharge capacity for application to active sensor tags of a radio frequency identification system. The fabricated 3.0 V-class film-type Li primary battery passes several safety tests and achieves a discharge capacity of more than 9 mAh $cm^{-2}$.

Design of Inverse E Class Frequency Multiplier with High Efficiency (고효율 inverse E급주파수 체배기 설계)

  • Roh, Hee-Jung;Cho, Jeong-Hwan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.98-102
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    • 2011
  • This paper describes inverse E class frequency multiplier which is lower inductance and peak switching voltage than E class frequency multiplier. The frequency multiplier is designed to generate 5.8[GHz] frequency by doubling the input frequency 2.9[GHz]. The peak switching voltage of designed inverse E class frequency multiplier with 11[V] is lower 4[V] than that of E class frequency multiplier with 15[V]. The inverse E class frequency multiplier has a conversion gain 6[dB] at output power 21[dBm] and maximum 35[%] power efficiency.

Optimization of Harmonic Tuning Circuit vary as Drain Voltage of Class F Power Amplifier (Class F 전력 증폭기의 드레인 전압 변화에 따른 고조파 조정 회로의 최적화)

  • Lee, Chong-Min;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.1
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    • pp.102-106
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    • 2009
  • This paper presents the design and optimization of output matching network according to envelope for class F power amplifier(PA) which is to apply to envelope elimination and restoration(EER) transmitter. In this paper, to increase the PAE of class F power amplifier which applies to EER transmitter, the varactor diode has been used on output matching network. As envelope changes, it optimizes constitution of harmonic trap that is short circuit in 2nd-harmonic and is open circuit in 3rd-harmonic. When drain voltage changes from 25 V to 30 V, some percentage is improved in the PAE.put the abstract of paper here.

A 1.5V 70dB 100MHz CMOS Class-AB Complementary Operational Amplifier (1.5V 70dB 100MHz CMOS Class-AB 상보형 연산증폭기의 설계)

  • 박광민
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.743-749
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    • 2002
  • A 1.5V 70㏈ 100MHz CMOS class-AB complementary operational amplifier is presented. For obtaining the high gain and the high unity gain frequency, the input stage of the amplifier is designed with rail-to-rail complementary differential pairs which are symmetrically parallel-connected with the NMOS and the PMOS differential input pairs, and the output stage is designed to the rail-to-rail class-AB output stage including the elementary shunt stage technique. With this design technique for output stage, the load dependence of the overall open loop gain is improved and the push-pull class-AB current control can be implemented in a simple way. The designed operational amplifier operates perfectly on the complementary mode with 180$^{\circ}$ phase conversion for 1.5V supply voltage, and shows the push-pull class-AB operation. In addition, the amplifier shows the DC open loop gain of 70.4 ㏈ and the unity gain frequency of 102 MHz for $C_{L=10㎊∥}$ $R_{L=1㏁}$ Parallel loads. When the resistive load $R_{L}$ is varied from 1 ㏁ to 1 ㏀, the DC open loop gain of the amplifier decreases by only 2.2 ㏈.a$, the DC open loop gain of the amplifier decreases by only 2.2 dB.

Design and Analyzing of Electrical Characteristics of 1,200 V Class Trench Si IGBT with Small Cell Pitch (1,200 V급 Trench Si IGBT의 설계 및 전기적인 특성 분석)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.105-108
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    • 2020
  • In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

Quantitative evaluation of microleakage using microtomograph in Class V restorations

  • Cho, Kyung-Mo;Shin, Dong-Hoon
    • Proceedings of the KACD Conference
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    • 2003.11a
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    • pp.564-564
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    • 2003
  • In recent years, the use of Microtomograph in dentistry were proposed and its applications are increasing. The purposes of this study is to evaluate the micro leakage in Class V restorations by using Microtomograph and to compare with other leakage test methods. Using high speed round bur, Class V cavities were prepared to the buccal sides of sixty extracted human upper premolars and randomly distributed to 4 experimental groups and restored as follows.(중략)

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