• Title/Summary/Keyword: cluster ion impact

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Gas Cluster ion Source for Etching and Smoothing of Solid Surfaces (고체 표면 식각 및 평탄화를 위한 가스 클러스터 이온원 개발)

  • 송재훈;최덕균;최원국
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.232-235
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    • 2002
  • An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

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Hydrogen-Atom and Charge Transfer Reactions within Acetylene/Methanol and Ethylene/Methanol Heteroclusters

  • 신동남;최창주;정경훈;정광우
    • Bulletin of the Korean Chemical Society
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    • v.17 no.10
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    • pp.939-943
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    • 1996
  • Reactions that proceed within mixed acetylene-methanol and ethylene-methanol cluster ions were studied using an electron-impact time-of-flight mass spectrometer. When acetylene and methanol seeded in helium are expanded and ionized by electron impact, the ion abundance ratio, [CH3OH+]/[CH2OH+] shows a propensity to increase as the acetylene/methanol mixing ratio increases, indicating that the initially ionized acetylene ion transfers its charge to adjacent methanol molecules within the clusters. Investigations on the relative cluster ion intensity distributions of [CH3OH2+]/[CH3OH+] and [(CH3OH)2H+]/[CH3OH·CH2OH+] under various experimental conditions suggest that hydrogen-atom abstraction reaction of acetylene molecule with CH3OH ion is responsible for the effective formation of CH2OH ion. In ethylene/methanol clusters, the intensity ratio of [CH3OH2]/[CH3OH] increases linearly as the relative concentration of methanol decreases. The prominent ion intensities of (CH3OH)mH over (CH3OH)m-1CH2OH ions (m=1, 2, and 3) at all mixing ratios are also interpreted as a consequence of hydrogen atom transfer reaction between C2H4 and CH3OH to produce the protonated methanol cluster ions.

Electron-Impact Ionization Mass Spectroscopic Studies of Acetylene and Mixed Acetylene-Ammonia Clusters as a Structure Probe

  • Sung Seen Choi;Kwang Woo Jung;Kyung Hoon Jung
    • Bulletin of the Korean Chemical Society
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    • v.13 no.5
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    • pp.482-486
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    • 1992
  • Ion-molecule reactions of acetylene and mixed acetylene-ammonia cluster ions are studied using an electron impact time-of-flight mass spectrometer. The present results clearly demonstrate that $(C_2H_2)_n^+$ cluster ion distribution represents a distinct magic number of n=3. The mass spectroscopic evidence for the enhanced structural stabilities of $[C_6H_4{\cdot}(NH_3)_m]^+$ (m=0-8) ions is also found along with the detection of mixed cluster $[(C_2H_2)_n{\cdot}(NH_3)_m]^+$ ions, which gives insight into the feasible structure of solvated ions. This is rationalized on the basis of the structural stability for acetylene clusters and the dissociation dynamics of the complex ion under the presence of solvent molecules.

Solid surface smoothing and etching by gas cluster ion beam (가스 클러스터 이온빔을 이용한 고체 표면 평탄화 및 식각에 대한 연구)

  • 송재훈;최덕균;최원국
    • Journal of the Korean Vacuum Society
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    • v.12 no.1
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    • pp.55-63
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    • 2003
  • A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

Improvement of Depth Profiling Analysis in $Hf_xO_y/Al_xO_y/Hf_xO_y$ structure with Sub 10 nm by Using Low Energy SIMS

  • Lee, Jong-Pil;Park, Sang-Won;Choe, Geun-Yeong;Park, Yun-Baek;Kim, Ho-Jeong;Kim, Chang-Yeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.162-162
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    • 2012
  • Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$$SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

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Influence of Ammonia Solvation on the Structural Stability of Ethylene Cluster Ions

  • Jung Kwang Woo;Choi Sung-Seen;Jung Kwang Woo;Hang Du-Jeon
    • Bulletin of the Korean Chemical Society
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    • v.13 no.3
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    • pp.306-311
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    • 1992
  • The stable structures of pure ethylene and mixed ethylene-ammonia cluster ions are studied using an electron impact ionization time-of-flight mass spectrometer. Investigations on the relative cluster ion distributions of $(C_2H_4)_n(NH_3)_m^+$ under various experimental conditions suggest that $(C_2H_4)_2(NH_3)_3^+$ and $(C_2H_4)_3(NH_3)_2^+$ ions have the enhanced structural stabilities, which give insight into the feasible structure of solvated ions. For the stable configurations of these ionic species, we report an experimental evidence that both $(C_2H4)_2^+(C_2H_4)_3^+$ clusters as the central cations provide three and two hydrogen-bonding sites, respectively, for the surrounding $NH_3$ molecules. This interpretation is based on the structural stability for ethylene clusters and the intracluster ion-molecular rearrangement of the complex ion under the presence of ammonia solvent molecules.

Numerical Analysis on Plasma Particles inside Electro-magnetic Field Using Particle-in-cell Method (Particle-in-cell 기법을 이용한 전자기장내 플라즈마 입자의 거동 해석)

  • Han, Doo-Hee;Joe, Min-Kyung;Shin, Junsu;Sung, Hong-Gye;Kim, Su-Kyum
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.45 no.11
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    • pp.932-938
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    • 2017
  • Particle-in-cell method which blends Eulerian grids and Lagrangian particle is utilized to solve simplified hall-effect thruster. Since this study individually tracks not only neutrons and ions but also electrons, message passing interface(mpi) scheme is adopted for parallel computer cluster. Helical movement of an electron cloud in constant magnetic field is validated comparing with an exact solution. A plasma in radial magnetic field and axial electric field in a reaction cylinder is established. Electrons do double helix movement and are well anchored in a cylinder. Ionization of neutrons by impact with high-speed electrons generates ion particles. They are accelerated by axial electric field, which forms a plume of a plasma-effect thruster.