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Lee, Soo-Hyung;Yu, Seong-Cho;Xu, Jun-Hau;Rao, K.V.;Noh, Tae-Hwan;Kang, Il-Koo;Rhie, Kungwon
- Journal of the Korean Magnetics Society
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- v.5 no.5
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- pp.841-845
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- 1995
The effect of small addition of Nb on the electrical resistivity and Hall coeffcient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coeffcients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of conentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. The unexpected temperature dependence of $R_{s}/{\rho}^{2}$ measured at low fields much below Tc is left as a question.
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Lee, Soo-Hyung;Yu, Seong-Cho;Xu, Jun-Hau;Rao, K.V.;Noh, Tae-Hwan;Kang, Il-Koo;Rhie, Kungwon
- Journal of the Korean Magnetics Society
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- v.5 no.5
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- pp.772-777
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- 1995
The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coefficients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. We suggested the temperature dependence of $R_{s}/{\rho}^{2}$ can be compared to Ms{T}.
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Lee, H. J.;Yonuk Chong;J. I. Kye;Lee, S. Y.;Z.G. Khim
- Progress in Superconductivity
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- v.2 no.2
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- pp.57-64
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- 2001
We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.
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Sung, Wokyng
- Proceedings of the Korean Biophysical Society Conference
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- 1996.07a
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- pp.7-7
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- 1996
A new trend that emerges at the turn of the century is the physical approach to biological phenomena. It is expected that biology provides novel materials for condensed matter physics and, most importantly, a revolutionary paradigm for physics at large. On the other hand, physics, if properly extended, is expected to provide systematic and quantitative understanding of biological phenomena, and multitude of biotechnological applications. (omitted)
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