• Economic and Environmental Geology
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• v.31 no.3
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• pp.249-264
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• 1998

The Creataceous volcanic rocks distributed in the southeastern part (Kyeongsang basin) of Korea peninsula are composed of basalt, basaltic andesite, andesite, dacite and rhyolite. The variation of major elements show that contents of MgO, CaO, $FeO^T$, $Al_2O_3$, $TiO_2$ and $P_2O_5$ decrease with increasing of $SiO_2$, but $K_2O$ contents are increased slightly, $Na_2O$ widely dispersed. We can show slightly inflection point and low frequency of dacites in range between 63-65 wt.% $SiO_2$, while continuous trend exit in variation diagram. Variation trends in Harker diagrams for the major, minor, trace and REEs suggest that the BAV (basaltic to andesitic volcanics) and DRV (dacitic to rhyolitic volcanics) are not related to a simple crystal fractionation process. In the regime of under 65 wt. % in silica content, fractionation of olivine and clinopyroxene is predominant, while that of plagioclase happens strongly higher than 65 wt.% (e.g., $SiO_2$, vs. Eu and Sr, MgO vs. $Al_2O_3$ and CaO). The latter means low-pressure fractional crystallization for DRV. On the discriminant diagram, DRV are located in more mature environment than BAV. The $(Ce/Sm)_N$ vs. CeN digram shows that these two classes cannot be related to crystal fractionation. If they had been produced by fractionation, although they plotted in a slightly elongate cluster along the same horizontal trend, DRV should lie to the right of these primitive compositions. These diagrams clearly rule out a simple fractionation throughout from BAV to DRV. BAV had been influenced greatly subductiong slab as shown by K/Yb vs. Ta/Yb. We suggest that BAV primitive magma generated higher degree of partial melting than DRV primitive magma. LILE (K, Ba, $Rb{\pm}Th$) enriched characteristics as shown in BAV are inherited from subducting slab fluids and/or higher degree of partial melting of mantle material. However, lower degree of partial melting of mantle relative to BA V and contamination at high-level magma reservoir caused LILE enrichment to DRV.

• Economic and Environmental Geology
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• v.25 no.2
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• pp.133-143
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• 1992

Ulsan granite is plotted mainly in the region of syeno-granite of the Streckeisen diagram, which consists with those of iron related granites in the area of Kimhae-Mulgum, while Chindong granites and Yucheon-Eonyang granites are plotted in the regions of granodiorite-diorite and monzo-granite, respectively. These granites show a differentiation trend of calc-alkaline magma, and their magmatic evolution from intermediate to acidic rocks is consistant with the general crystallization path of the Cretaceous granitic rocks in the Gyeongsang basin. The difference index (D.I.) is 70~90 for Ulsan granite, which lies between 35~80 of Chindong granites and 85~95 of Yucheon-Eonyang granites. These granites are distinguishable from each other by variation patterns of chemical elements. For instance, there is clear difference in content of some major and trace elements between Ulsan granite and Cu-related Chindong granites: Ulsan granite has high content of K (2.68%) and Ba (636 ppm), and low content of Ca (1.07%), Mg (0.50%) and Sr (185 ppm), whereas Chindong granites has less content of K (1.62%) and Ba (382 ppm), and higher content of Ca (3.75%), Mg (1.42%) and Sr (405 ppm). However, the content of Ulsan granite overlaps partly those of Yucheon-Eonyang granites, which are apparently dividable from Chindong granites. There is an usual trend that Cu content is high in Chindong granites of Cu province and Zn content is higher in Yucheon-Eonyang granites of Pb-Zn province. But it is unusual that Cu and Zn are higher in Ulsan granite (34 ppm, 74 ppm) than in Chindong granites (15 ppm, 22 ppm) and Yucheon-Eonyang granites (14 ppm, 43 ppm). This may be due to the reason that Ulsan granite is productive and Cu-Zn minerals are associated with iron ores. Productive Chindong granites in Haman-Gunbug area and Yuchon-Eonyang granites near ore deposits have higher content of Cu and Zn than Ulsang granite. Therefore, it is expected that chemical variation patterns of granites are applicable to distinguish mineral commodity of ore deposits (iron, copper, or lead-zinc) related with the granites in the Gyeongsasng basin.

• Applied Biological Chemistry
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• v.22 no.4
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• pp.191-197
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• 1979

${\beta}-Tyrosinase$ was purified and crystallized from cells of Escherichia intermedia A-21 grown in a medium supplemented with 0.2% L-tyrosine. Molecular weight of its subunit, Km value and absorption spectra were determined. Crystallization methods were also studied to eliminate any unnecessary procedures. The results obtained were as follows: 1. The purification procedure included ammonium sulfate fractionation, dialysis against potassium phosphate buffer, pH 6.0 and pH 7.0, and DEAE-Sephadex column chromatography. In the column chromatography, 11 mg of protein was applied per ml of DEAE-Sephadex for efficiency. 2. Steps of protamine sulfate treatment and Sephadex G-150 gel filtration could be eliminated for this enzyme from the known procedures. 3. The purified enzyme was dissolved in 0.01M potassium phosphate buffer containing 2-mercaptoethanol, with a concentration of 20mg/ml. Crystalline enzyme, which appears as hexagonal rods, was obtained by adding solid fine powdered ammonium sulfate to the enzyme solution. 4. Absorption maxima of the enzyme appeared at 340 and 430nm when associated with pyridoxal phosphate. 5. Km value of the enzyme for L-tyrosine was $2.31{\times}10^{-4}M$ and the molecular weight of its subunit was determined by SDS-polyacrylamide electrophoresis to be approximately 50,000.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.768-771
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• 2005

The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.

• Applied Chemistry for Engineering
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• v.25 no.1
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• pp.14-19
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• 2014

Nanocomposites based on poly(methyl methacrylate) (PMMA)/poly(vinylidene fluoride) (PVDF) and poly(ethylene terephthalate) (PET)/(PVDF) blended with carbon fibers (CF) and carbon nanotube (CNT) were prepared by melt mixing in the twin screw extruder. Morphologies of the PMMA/PVDF/CF/CNT and PET/PVDF/CF/CNT nanocomposites were investigated using SEM. The aggregation of CNT was observed in PMMA/PVDF/CF/CNT nanocomposites while the good dispersion of CNT was shown in PET/PVDF/CF/CNT nanocomposites. In SEM image of PET/PVDF/CF/CNT nanocomposite, the CNT were mainly located at the PET domain of phase-separated PET/PVDF blend due to the ${\pi}-{\pi}$ interaction between the phenyl ring of PET and graphite sheet of the CNT's surface. In addition, a fairly good compatibility between PET/PVDF matrix and CF was shown in the SEM image. In the case of PET/PVDF nanocomposites blended with the co-addition of CF and CNT, the volume electrical resistivity decreased while no change was observed in PMMA/PVDF/CF/CNT composites. The degree of CNT dispersion in morphology results was consistent with the electrical conductivity results. From the DSC results, the crystallization temperature (Tc) of PET/PVDF/CF/CNT nanocomposites increased due to the co-addition of CF and CNTs acting as a nucleating agent. Flexural modulus of PET/PVDF/CF/CNT were sharply enhanced due to increasing the interaction between PET and CF.