• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.162-167
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• 2003

To find the concentration according to the depth-direction of ions implanted in the sample, with sputtering of the sample surface, one needs the depth profiling of ion implanted in the sample. On measuring of depth profiling, the sputtering rate to affect depth direction, is calculated by SRIM simulation. When ion is implanted in the sample, the atomic density of the sample rises up a little, and it alters sputtering yield. This alteration then causes differences of sputtering rate to affect depth-direction, on measuring of depth profiling. With the usage of SRIM Monte Carlo simulation code, one calculates sputtering rate, with sputtering yield by the alteration of atomic density of the sample through ion implantation. As a result, it goes to prove that its difference affects depth distribution, on measuring of depth profiling.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.367-367
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• 2011

CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.347-347
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• 2011

Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

• Proceedings of the Acoustical Society of Korea Conference
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• 1998.06c
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• pp.433-438
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• 1998

본 연구에서는 time averaging과 depth profiling기술을 음향현미경에 적용하여 5MHz 대역의 초음파 영상처리 시스템을 구성하였으며 기존의 피크값 검출기술과 상호 비교, 분석하였다. time averaging기술에서는 한 지점에서 반사된 tone burst파 전체를 디지털 오실로스코프를 통해 시간영역에서 A/D변환하고 변환된 512개 데이터들의 평균값을 취함으로써 영상을 얻을 수 있었으며, 이 기술은 시간영역에서 smoothing효과를 이용하여 산란이 심한 영역에 대한 영상을 개선시킬 수 있었다. depth profiling기술은 기준신호에 대한 반사신호의 시간 지연값을 최소 분해능 2ns로 검출함으로써 샘플의 3차원적인 실제 기하학적인 모양을 상대적인 크기로 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.61-62
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.151-151
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• 1996

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.8
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• pp.1222-1229
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• 2010

Compared to conventional high resolution acoustic profiling, ultra high resolution shallow acoustic profiling using parametric echo sounder is limited in penetration, yet it provides resolution suitable for detailed seabed investigation in the shallow waters. The parametric sub-bottom profiler system provides not only the exact determination of water depth, but also the detailed information about sediment layers and sub-bottom structures. Possible applications include dredging project, search of buried pipeline, ship wrecks, and other artificial objects through the detailed mapping of thickness and structure of the upper sedimentary layers. In this study, contaminated sediments were discriminated by the correlation of ultra high resolution profiles with geologic data. In addition, the burial depth of the submarine cable was measured by the interpretation of acoustic anomalies in the profiles.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.283-289
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• 1999

Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.