• 한국진공학회지
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• 제12권3호
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• pp.162-167
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• 2003

시료에 주입된 이온의 깊이방향에 따른 농도분포를 알아보기 위하여 시료표면을 sputtering 하면서 튀어나온 주입된 이온을 depth profiling한다. Depth profiling 측정 시에 깊이방향에 영향을 주는 sputtering rate가 변화하는 효과를 SRIM simulation을 이용하여 계산하였다. 시료에 이온이 주입하게 되면 시료의 원자밀도는 약간 증가하게 되는데, 그 결과로 sputtering yield가 변화하게 된다. 이러한 변화가 결과적으로 depth profile 측정시에 깊이방향에 영향을 줄 수 있는 sputtering rate를 변화시키는 원인이 된다. SRIM(Stopping and Range of Ions in Matter) Monte Carlo simulation code를 사용하여 이온주입에 의한 시료의 원자밀도의 변화에 따른 sputtering yield를 구하여 sputtering rate를 계산하고, 그 차이가 depth profiling 측정에서 깊이방향 분포에 영향을 줄 수 있다는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.367-367
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• 2011

CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.347-347
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• 2011

Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

• 한국음향학회:학술대회논문집
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• 한국음향학회 1998년도 학술발표대회 논문집 제17권 1호
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• pp.433-438
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• 1998

본 연구에서는 time averaging과 depth profiling기술을 음향현미경에 적용하여 5MHz 대역의 초음파 영상처리 시스템을 구성하였으며 기존의 피크값 검출기술과 상호 비교, 분석하였다. time averaging기술에서는 한 지점에서 반사된 tone burst파 전체를 디지털 오실로스코프를 통해 시간영역에서 A/D변환하고 변환된 512개 데이터들의 평균값을 취함으로써 영상을 얻을 수 있었으며, 이 기술은 시간영역에서 smoothing효과를 이용하여 산란이 심한 영역에 대한 영상을 개선시킬 수 있었다. depth profiling기술은 기준신호에 대한 반사신호의 시간 지연값을 최소 분해능 2ns로 검출함으로써 샘플의 3차원적인 실제 기하학적인 모양을 상대적인 크기로 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.61-62
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• 1994

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.151-151
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• 1996

• Journal of Advanced Marine Engineering and Technology
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• 제34권8호
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• pp.1222-1229
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• 2010

비선형 측심기를 이용한 초고해상 음향탐사는 기존의 고해상 음향탐사보다 투과력은 작지만 해상력이 뛰어나기 때문에 천해역에서의 해저환경조사에 유용하게 사용된다. 비선형 지층탐사 시스템은 정확한 수심측정 뿐 아니라 퇴적층과 하부구조에 대한 상세한 정보를 제공한다. 특히 상부 퇴적층의 정밀층후 및 퇴적구조 확인을 통해 해저에 파묻혀 있는 pipeline, 침몰선박, 인위적 물체 등에 대한 탐색에 이용된다. 이 연구에서는 초고해상 지층탐사기를 이용하여 얻어진 지층탐사 기록과 지질자료를 대비하여 오염퇴적층을 구분하였다. 그리고 지층 기록에 나타나는 음향이상을 해석하여 해저에 매설된 케이블의 매설 깊이를 검측하였다.

• 한국진공학회지
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• 제8권3B호
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• pp.283-289
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• 1999

Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.