• Journal of IKEEE
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• v.26 no.1
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• pp.119-123
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• 2022

This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.1
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.28-31
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• 2003

We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

• Journal of the Korean Society of Clothing and Textiles
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• v.45 no.2
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• pp.376-389
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• 2021

This study investigates the effects of the interplay of device types and the need for touch (NFT) on product attitudes and determines how the mental simulation of touch mediates such relationships. Specifically, we test the roles of instrumental and autotelic NFT in the moderated mediation effect of mental simulation of touch. We instructed the potential participants to shop for a leather jacket on a webpage. With a total of 152 data points from the responses of participants who used a laptop and a touch device that uses a direct-touch interface (e.g., tablets), we conducted descriptive statistics, analysis of variance, and PROCESS procedures using SPSS 20.0. The results show a greater mental simulation for touch when using a touch device than a laptop. When individuals' instrumental NFT is low, using a touch device while shopping online heightens mental simulation of touch, which impacts product attitudes. In particular, such a moderated mediation effect strengthens as the value of individuals' autotelic NFT increases. However, when individuals' instrumental NFT is high, a touch device cannot drive mental simulation for touch, increasing favorable attitudes toward the product.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.39-42
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• 2006

There are various analysis functions(including prediction of path loss, analyzing of capacity and coverage, etc.) of simulation tool to design and optimize the mobile communication network. Its reliability absolutely effects the performance of mobile communication network. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the standard establishment of reliability of the simulation tool. Also it is important the systematic research how to improve the reliability of simulation tool. In this paper, to give the concrete process and skill about how to improve reliability, we define the kinds of reliability at first. And then we explain the comparison results between real field measurement data and theoretic simulation data.

• Journal of Korea Game Society
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• v.13 no.4
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• pp.35-46
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• 2013

In this paper, we show a real-time lightning simulation for smart device game. Our proposed method uses physically based Dielectric Breakdown Model to similar real world lightning path and we simplify the algorithm for real-time simulation in smart device. In addition, the rendering process can render multiple lightning and can real-time render in smart device. Finally, our lightning can support interactive with user. The simulation method will be effectively useful for a game that needs a real-time simulation as its game element in smart device environment.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.29 no.3
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• pp.66-75
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• 2021

As the domestic aviation industry develops, demand for pilots is increasing. As a result, the demand for flight training using flight simulation training devices that implement the same or similar interior of aircraft is also increasing. Despite this increase in demand, domestic laws, regulations and management systems related to flight simulation training devices have remained unchanged since 2009. As a result, the criteria for designation of new or developed flight simulation training devices are ambiguous. In addition, proper improvement of the current system should be prioritized for designation of new devices such as UAM and VR, along with developing flight simulation training devices. It is intended to present measures to improve the domestic flight simulation training system by investigating and analyzing advanced cases overseas.

• Journal of the Korean Society of Safety
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• v.32 no.1
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• pp.121-127
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• 2017

Recently, many patients in a hospital are threatened life by fire disaster. Because many patients like vulnerable people have more evacuation problem than ordinary person. So a patient who can escape by oneself with walking assistance device like crutches or wheelchair and another patient who can't escape by oneself are should be supported safety technologies and service. Earlier research of 'hospital evacuation' led by actual experiments or computer evacuation simulation. Actual experiment is effective to gain credibility of result but it is difficult for patients to experiment repeatedly and it requires consideration for spatial problem and economic problems. Although computer evacuation simulation have been used to solve these problems, almost have concluded only results based on velocity without evacuation device. In this study, evacuation results with support device application or not are analysed used by computer evacuation simulation based on MAS(Multi Agent System). As a result, it is drawn through proof of efficiency of evacuation device in the vertical space like stairs that can improve the evacuation plan for vulnerable people in the hospital.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1212-1215
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• 2009

The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.