• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.109-111
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• 2007

In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.820-829
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• 2017

Vegetable oil dielectrics have been used in transformers as green alternatives to mineral insulating oils for about twenty years, because of their advantages of non-toxic, biodegradability, and renewability. However, the viscosity of vegetable oils is more than 3 times of mineral oils, which means a poor heat dissipation capacity. To get low-viscosity dielectrics, transesterification and purification were performed to prepare vegetable oil methyl esters in this study. Electrical and physical properties were determined to investigate their potential as dielectrics. The results showed that the methyl ester products had good dielectric strengths, high water saturation and enough fire resistance. The viscosities (at $40^{\circ}C$) were 0.2 times less than FR3 fluid, and 0.7 times less than mineral oil, which indicated superior cooling capacity as we expected. With the assistance of 0.5 wt% pour point depressants, canola oil methyl ester exhibited the lowest pour point ($-26^{\circ}C$) among the products which was lower than FR3 fluid ($-21^{\circ}C$) and 25# mineral oil ($-23^{\circ}C$). Thus, canola oil methyl ester was the best candidate as a low-viscosity vegetable oil-based dielectric. The low-viscosity fluid could extend the service life of transformers by its better cooling capacity compared with nature ester dielectrics.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2262-2267
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• 2017

A new force expression on dielectrics subjected to electric field is proposed in this paper. It is the electric version of the equivalent magnetizing current method in magnetic field. From the idea of electromagnetic duality, virtual equivalent electrifying magnetic current method is conjectured in the field of dielectric force problem. Numerical results show that the proposed method has good agreements with the conventional methods. The merits and demerits of the proposed method are also discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.11-11
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• 2014

CVD 로 성장된 그래핀 표면위에 transfer 와 lithography 공정에서 잔류하게 되는 PMMA residue 는 mobility 의 감소와 high-k dielectrics 의 증착을 방해하는 결정적인 요인이다. 우리는 최적화 되어진 Ar ion beam 을 통해 PMMA residue 를 damage 없이 효과적으로 제거하였고, 손쉽게 high-k dielectrics 를 uniform 하게 증착할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1415-1418
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• 2007

Electronic and structural properties of the interfaces formed by pentacene deposited on a polymer-based dielectrics are investigated by electron spectroscopy, atomic force microscopy, and water contact angle measurement. There is strong influence of surface treatment of the polymer dielectrics on the energy level alignment and the surface topography upon the pentacene deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.312-314
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• 2009

We have fabricated pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The gate dielectrics is composed of PVP, poly[melamine-coformaldehyde] (PMF) and photo-initiator [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173]. By adding small amount (1 %) of photo-initiator, the cross-linking temperature is lowered to $115^{\circ}C$, which is lower than general thermal curing reaction temperature of cross-linked PVP (> $180^{\circ}C$). The hysteresis and the leakage current of the OTFTs are also decreased by adding the PMF and the photoinitiator in PVP gate dielectrics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.311-316
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• 2003

Effects of pores on the microwave properties in microwave dielectric ceramics were studied by a computer simulation. Scattering matrix S$\_$21/ obtained from the network analyzer was compared to the S$\_$21/ obtained from the simulation. From electric field distribution, the dominant resonant TE$\_$01$\delta$/ mode could be easily determined. The effects of the porosity and pore size inside the dielectrics on the microwave properties were investigated by the HFSS simulation. When the total pore volume remains constantly, the quality factor decreased as the pore size Increases. As the total pore volume of the dielectrics increased. quality factor decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• 전기의세계
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• v.23 no.3
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• pp.60-66
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• 1974

This paper is to study on the phenomena that the compound dielectric strength through double layers of air-insulating oil dielectrics is much lower than that of air dielectrics only. the change of the dielectric strength by the variance of air gap depends on the characteristics of air gap discharge and, in case of commercial voltage, the degree of dependance is greeter than in case of direct current voltage.