• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.38-41
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• 2019

Proton beam writing is a direct writing lithography technique for semiconductor fabrication process. The advantage of this technique is that the proton beam does not scatter as they travel through the matter and therefore maintain a straight path as they penetrate into the resist. The experiment has been carried out at Accelerator Mass Spectrometry facility. The focused proton beam with the fluence of $100nC/mm^2$ was exposed on the PMMA coated silicon sample to make a pattern on a photo resist. The results show the potential of proton beam writing as an effective way to produce semiconductor fabrication process.

• Design & Manufacturing
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• v.2 no.6
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• pp.28-32
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• 2008

Polymer solar cells are a type of organic solar cell (also called plastic solar cell), or organic photovoltaic cell that produce electricity from sunlight using polymers. It is a relatively novel technology, they are being researched by universities, national laboratories and several companies around the world. In this paper, stamping mold of barrier ribs for polymer solar cells was manufactured by lithography and electroforming which can control the height of pattern and 80nl of barrier ribs was manufactured by using hot embossing.

• Laser Solutions
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• v.10 no.2
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.112-117
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• 1989

This paper describes to the unit rectangle EB direct writing lithography method using SEM. This method has the constant exposure time to any rectangle pattern. In order to change the EB current according to various rectangle size for the constant exposure time, the supply current of condenser lens in controlled by BITMAP-IV CAD system. By this method, the resizing procedure of density pattern area is not needed to pattern data conversion, and the through-put ofr exposure is increased about 172 times compared with the unit scan exposure method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.58-62
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• 2019

Diffractive Optical Elements(DOEs) diffracts incident light using the diffraction phenomenon of light to generate a desired diffraction image. In recent years, the use of diffraction optics, which can replace existing refractive optical elements with flat plates, has been increased by implementing various optical functions that could not be implemented in refractive optical devices and by becoming miniaturized and compacted optical elements. Direct laser lithography is typically used to effectively fabrication such a diffractive optical element in a large area with a low process cost. In this study, the process conditions for fabricating patterns of diffractive optical elements in various shapes were found using direct laser lithographic system, and optical performance evaluation was performed through fabrication.

• Macromolecular Research
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• v.13 no.5
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• pp.435-440
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• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.144-151
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• 2024

This work focuses on the fabrication of excellent magnetic structures for trapping breast cancer cells. Micromagnetic structures were patterned for trapping cancer cells by depositing 30 nm of permalloy on a silicon substrate. These structures were designed and fabricated using two fabrication techniques: electron beam lithography and laser direct writing. Two types of magnetic structures, rectangular wire and zig-zagged wire, were created on a silicon substrate. The length of each rectangular wire and each straight line of zig-zagged wire was 150 ㎛ with a range of widths from 1 to 15 ㎛ for rectangular and 1, 5, 10 and 15 ㎛ for zigzag, respectively. The magnetic structures showed good responses to the applied magnetic field despite adding layers of silicon nitride and polyethylene glycol. The results showed that Si + Si₃N₄ + PEG exhibited the best adhesion of cells to the surface, followed by Si + Py + Si₃N₄ + PEG. concentration of 5-6 with permalloy indicates that this layer affected silicon nitride in the presence of Polyethylene glycolPEG.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.