• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.339-341
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• 2004

We obtained ultra-short single pulse with an energy of 80 of from self Q-switched Distributed Feedback Dye Laser. Using three stages of amplifiers constructed by two stages of dye amplifiers and one bethune cell amplifier, we obtained high power pulse and second harmonic generation with BBO in ultraviolet region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.8
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• pp.1817-1823
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• 2009

A design of cascaded distributed amplifier with a broadband amplification is described in this paper. A medium power device with 23dBm, max output power under the optimal narrow-band power matching condition is adopted for the design and fabrication of the cascaded distributed amplifier. In general, conventional distributed amplifiers with the parallel connected input ports have a low gain, and previous cascaded distributed amplifiers show a relatively low output power of 10dBm at most, which is the upper limit of small signal amplification. However, the cascaded distributed amplifier in this paper shows the gain of $18.15{\pm}0.75dB$ and output power of 20dBm over $300MHz{\sim}2GHz$ from the measurement, so it can be well adopted as a wideband driver amplifier.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.946-949
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• 2004

We obtained ultra-short single pulse with an energy of 80 uJ from Distributed feedback Dye laser. Using three stages of amplifiers constructed by two stages of dye amplifiers and one bethune cell amplifier, we obtained high power pulse and second harmonic generation with BBO in ultraviolet region.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.125-131
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• 2002

This paper presents MMIC drive and power amplifiers covering 6-18 ㎓. For simple wideband impedance matching and less sensitivity to fabrication variation, modified distributed topologies are employed in the both amplifiers. Cascade amplifiers with a self-biasing circuit through feedback resistors are used as unit gain blocks in the drive amplifier, resulting in high gain, high stability, and compact chip size. Self impedance matching and high-pass, low-pass impedance matching networks are used in the power amplifier. In measured results, the drive amplifier showed good return losses ($S_11,{\;}S_{22}{\;}<{\;}-10.5{\;}dB$), gain flatness ($S_{21}={\;}16{\;}{\pm}0.6{\;}dB$), and $P_{1dB}{\;}>{\;}22{\;}dBm$ over 6-18 GHz. The power amplifier showed $P_{1dB}{\;}>{\;}28.8{\;}dBm$ and $P_{sat}{\;}{\approx}{\;}30.0{\;}dBm$ with good small signal characteristics ($S_{11}<-10{\;}dB,{\;}S_{22}{\;}<{\;}-6{\;}dB,{\;}and{\;}S_{21}={\;}18.5{\;}{\pm}{\;}1.25{\;}dB$) over 6-18 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.818-823
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• 2014

A high-gain wideband low noise amplifier (LNA) using $0.25-{\mu}m$ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of $25.1{\pm}0.8dB$ and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

• ETRI Journal
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• v.24 no.2
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• pp.81-96
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• 2002

This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.4
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• pp.602-607
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• 2006

In this paper, the distributed network synthesis, which is useful to the design of wireless power amplifiers, is proposed, and a RF power amplifier is designed using the technique. The transfer function of distributed matching circuits is derived by Chebyshev approximation, and network element values for a specified topology are given as a function of minimum insertion losses and ripples. As an example, after a power transistor is modeled by load-pull data, the synthesis for distributed matching networks is applied to a power amplifier design, which has the electrical performance of 17dB gain and less IM3 than -43dBc at the 20W output power between 800 to 900MHz frequency range. Experimental results from a fabricated amplifier are shown to approach the design performance in the operating frequency range. The design of impedance matching networks by the transfer function synthesis is a useful method for the design of RF power amplifiers.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.351-354
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• 2008

We demonstrate an ultra-dense wavelength-division- multiplexed (UD-WDM) passive optical network (PON) where 12.5-GHz spaced 1 GbE ${\times}$ 256 optical channels are distributed using 12.5- and 200-GHz arrayed waveguide gratings in series. For the generation of upstream signals, we use reflective semiconductor optical amplifiers. We use two optical fiber amplifiers at the optical line terminal to amplify downstream and upstream channels.