• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.102-105
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• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.455-456
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• 2008

In this study, we report that an electrical properties of OLEDs was investigated by the surface etching method of ITO Layer. The electrical properties of OLEDs was measured by IVL and optical properties by EL spectrum. The fundamental structure of OLEDs was ITO anode/TPD(400$\breve{A}$)/$Alq_3(600\breve{A})$/LiF(5$\breve{A}$)/Al(1200$\breve{A}$) cathode. The threshold voltage was low value according to the low resistance of surface. The luminance was increased by decreased surface resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.2
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• pp.183-191
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• 1990

Polycrystalline CdS film have been prepared by coating a slurry constiting of CdS, CdCl2, various amount of InCl3 and propylene glycol on glass substrate and by sintering in a nitrogen atmosphere, and their sintering behaviors, electrical properties and optical properties have been investigated. As the amount of InCl3 increases, the enhancing effect of CdCl2 on sistering decreses resulting in a sharp decrease in optical transmittance and an increase in electrical resistivity. The carrier concentration is almost independent of InCl3 added due to the occurrence of chlorine doping and to the compensating effect of indium dopant. Microstructure an optical properties of CdS film, which contain CdCl2 and InCl3 before sintering, can be improved by sintering in a sealed boat.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.778-782
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• 1997

In this paper the electronic and optical properties of various poly(3-alkylthiophene)s differing in alkyl chain length were investigated. And their dependence on temperature were also investigated. The electrical conductivity decreased with the increase of alkyl chain length. In addition optical properties were changed due to the shift of edge energy which was caused by the change of the alkyl chain length and rise of temperature. The conformational change of poly(3-alkylthionphene) depending on the alkyl chain length is believed to be responsible to the change of electronic and optical properties of materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.620-625
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• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.333-337
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• 2014

In this study, the use of a discharging process for charged particles is proposed to achieve an ideal electrical balance or neutralization and to improve the electrical and optical properties of a reflective electronic display. Here, negatively charged particles (white) and positively charged particles (black) are used. The q/m (charge per mass for a particle) values of the black and white particles are $+4.5{\mu}C/g$ and $-4.5{\mu}C/g$, respectively. We compared the movement of the charged particles by varying their discharging time. Stable movement of the charged particles is obtained with an appropriate discharging time, which resulted in improvements of the optical properties of the panel.