• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.241-242
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• 2008

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.39-44
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• 2004

The present paper gives a review of the recent development of a differential mobility analyzer (DMA) available for both particle size measurements and production of monodisperse particles in the nanometer range. Operating principles of a general DMA are introduced as well as characteristics of highly functional DMAs such as those capable of classifying particles in a measurement range as broad as 1-1000nm at low pressures. Some examples of DMA applications are also described.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.12
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• pp.1766-1771
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• 2003

House made differential mobility analyzer(DMA) is calibrated with NIST SRM 1691(300 nm PSL). Then the particle size and uncertainty for differential mobility analyzer(DMA) using the NIST SRM 1963(100 nm PSL). In result, calibration of prototype DMA is measured using 300 nm NIST SRM 1691, then sheath air flow was corrected 126.67 ㎤/s. Corrected sheath air flow is used in uncertainty measurement of prototype DMA. Uncertainty analysis is performed using NIST SRM 1963(100 nm PSL). The experimental result shows that NIST SRM 1963 is measured as 102.17 nm with a type A uncertainty of 0.33 nm.

• Particle and aerosol research
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• v.10 no.1
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• pp.33-43
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• 2014

A differential mobility analyzer (DMA) has been widely used as a standard tool for classifying nanoparticles with a certain size. More recently, several new types of DMA have been tested in an attempt to produce size-monodisperse nanoparticles. It is a bit surprise to see how simple the working theory of the DMA is. Although the theory was demonstrated quite successful, no one can guarantee whether the theory still works in another geometry of the DMA. In this regard, we first investigated the validity of the theory under various working conditions and then moved to check the validity upon minor change in its design. For the valid test, we compared the results with those obtained from a computational fluid dynamics.

• Particle and aerosol research
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• v.5 no.2
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• pp.83-90
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• 2009

This paper describes a condensation-evaporation method (CEM) to produce size-controlled spherical silver nanoparticles by perturbing coagulation and coalescence processes in the gas phase. Polydisperse silver nanoparticles generated by the CEM were first introduced into a differential mobility analyzer (DMA) to select a group of silver nanoparticles with same electrical mobility, which also enables to make a group of nanoparticles with elongated structures and same projected area. These silver nanoparticles selected by the DMA were then in-situ sintered at ${\sim}600^{\circ}C$, and then they were observed to turn into spherical shaped nanoparticles by the rapid coalescence process. With the assistance of modified converging-typed quartz reactor, we can also produce the 10 times higher number concentration of silver nanoparticles compared with a general quartz reactor with uniform diameter. Finally, the spherical silver nanoparticles with 30 nm were electrostatically deposited on the surface of silicon substrate with the coverage rate of ~4%/hr. This useful preparation method of size-controlled monodisperse silver nanoparticles developed in this work can be applied to the various studies for characterizing the physical, chemical, optical, and biological properties of nanoparticles as a function of their size.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2000.11a
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• pp.117-118
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• 2000

대전 입자의 거동은 입자의 제어 측면뿐만 아니라 입자의 측정에서 중요한 요소 중 하나이다. 특히, 입자를 실시간으로 측정하는 경우 입자의 대전량을 정밀하고 정확하게 측정하는 것은 측정 대상이 심하게 변할 때 매우 중요하다. 입자의 전기적 특성(대전량)을 이용하여 입경분포를 측정하는 장비로는 EAA(electrical aerosol analyzer), SMPS(scanning mobility particle sizer), ELPI(electrical low pressure impactor) 등이 있다. (중략)

• Proceedings of the Korea Air Pollution Research Association Conference
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• 1999.10a
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• pp.83-84
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• 1999

시정악화나 광화학 스모그를 비롯하여 지구 온난화에 부유 입자상 물질이 미치는 영향 등을 파악하기 위해선 중량농도, 화학적 성분분석 등과 함께 그 입경별 크기 분포도 반드시 고려되어야만 한다. 입경분포 측정을 위하여 다단식 임팩터(Cascade Impactor)나 광학입자계수기(OPC, Optical Particle Counter), Aerosizer, SMPS (Scanning Mobility Particle Sizer), EAA(Electrical Aerosol Analyzer) 등 이주로 사용되고 있다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.