• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.163.2-163.2
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• 2010

In this work, nano-flake shaped nickel oxide (NiO) films were synthesized by chemical bath deposition technique for electrochemical capacitors. The deposition was carried out for 1 and 2 h at room temperature using nickel foam as the substrate and the current collector. The structure and morphology of prepared NiO film were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And, electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge-discharge, and AC impedence measurement. It was found that the NiO film was constructed by many interconnected NiO nano-flakes which arranged vertically to the substrate, forming a net-like structure with large pores. The open macropores may facilitate the electrolyte penetration and ion migration, resulted in the utilization of nickel oxide due to the increased surface area for electrochemical reactions. Furthermore, it was found that the deposition onto nickel foam as substrate and curent collector led to decrease of the ion transfer resistance so that its specific capacitance of a NiO film had high value than NiO nano flake powder.

• Journal of Powder Materials
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• v.18 no.1
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• pp.49-55
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• 2011

Ni nanowires were fabricated using anodic aluminum oxide (AAO) membrane as a template by electrochemical deposition. The nanowires were formed within the walls of AAO template with 200 nm in pore diameter. After researching proper voltage and temperature for electrochemical deposition, the length of Ni nanowires was controlled by deposition time and the supply of electrolyte. The morphology and microstructure of Ni nanowires were investigated by field emission scanning electron microscope (FE-SE), X-ray diffraction (XRD) and transmission electron microscope (TEM).

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.165-171
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• 2020

The electrochemical preparation and spectroscopic characterisation of iridium-antimony (Ir-Sb) species is important owing to their potential applications as nanostructure materials. Nanostructures, i.e. nanoflower and nanodisk, of Ir-Sb were electrodeposited on conductive substrates using a practical electrochemical method based on the simultaneous underpotential deposition (UPD) of Ir and Sb from the IrCl₃ and Sb₂O₃ at a constant potential. Electrochemical UPD mechanism of Ir-Sb was studied using cyclic voltammetry and potential-controlled electrochemical deposition techniques. Herein, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron and Raman spectroscopy were used to determine the morphological and structural properties of the electrochemically-synthesised Ir-Sb nanostructures.

• International Journal of Precision Engineering and Manufacturing
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• v.6 no.4
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• pp.49-54
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• 2005

In this paper, micro structuring technique using localized electrochemical deposition (LECD) with ultra short pulses was investigated. Electric field in electrochemical cell was localized near the tool tip end region by applying pulses of a few hundreds of nano second duration, Pt-Ir tip was used as a counter electrode and copper was deposited on the copper substrate in mixed electrolyte of 0.5 M $CuSO_4$ and 0.5 M $H_2SO_4$, The effectiveness of this technique was verified by comparison with ECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration were investigated. The proper condition was selected based on the results of the various experiments. Micro columns less than $10{\mu}m$ in diameter were fabricated using this technique. The real 3D micro structures such as micro spring and micro pattern were made by the presented method.

• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.61-68
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• 2019

Well aligned $SnO_2$-doped ZnO nanorods were prepared by single step or 2-step electrochemical depositions in a mixture solution of zinc nitrate hexahydrate, ammonium hydroxide solution and 0.1 M tin chloride pentahydrate. The morphologies of electrochemically deposited $SnO_2$-doped ZnO were transformed from plain (or network) structures at low reduction potential to needles on hills at high reduction potential. Well aligned ZnO was prepared at intermediate potential ranges. Reduction reagent and a high concentration of Zn precursor were required to fabricate $SnO_2$ doped ZnO nanorods. When compared to results obtained by single step electrochemical deposition, 2-step electrochemical deposition produced a much higher density of nanorods, which was ascribed to less potential being required for nucleation of nanorods by the second-step electrochemical deposition because the surface was activated in the first-step. Mechanisms of $SnO_2$ doped ZnO nanorods prepared at single step or 2-step was described in terms of applied potential ranges and mass-/charge- limited transfer.

• Journal of IKEEE
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• v.13 no.2
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• pp.126-131
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• 2009

To overcome short channel effects, wrap-around field effect transistors have drawn a great deal of attention for their superior electrostatic coupling between the channel and the surrounding gate electrode. In this paper, we introduce a bottom-up technique to fabricate a wrap-around field effect transistor using silicon nanowires as the conduction channel. Device fabrication was consisted mainly of electron-beam lithography, dielectrophoresis to accurately align the nanowires, and the formation of gate electrode using electrochemical deposition. The electrolyte for electrochemical deposition was made up of non-toxic organic-based solution and liquid nitrogen was used as a method of maintaining the shape of polymethyl methacrylate(PMMA) during the process of electrochemical deposition. Patterned PMMA can be used as a nano-template to produce wrap-around gate nano-structures.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1199-1202
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• 2003

In this research, microfabrication technique using localized electrochemical deposition is presented. Electric field is localized near the tip end region by applying ultra short pulses. Platinum tip is used as the counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The deposition characteristics such as size, shape, and structural density according to pulse duration and applied voltage are investigated. Micro-columns less than 10 $\mu\textrm{m}$ in diameter are fabricated using the presented technique. The process can be potentially used for three dimensional metal structure fabrications with micrometer feature size.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.151-152
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.229-230
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• 2010