• Journal of IKEEE
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• v.23 no.3
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• pp.878-882
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• 2019

XOR(exclusive-OR)-XNOR(exclusive NOR) circuit is a basic component of 4-2 compressor for high performance arithmetic operation. In this paper we propose an energy efficient XOR-XNOR circuit. The proposed circuit is reduced the internal parasitic capacitance in critical path and implemented with 8 transistors. The circuit produces a perfect output signals for all input combinations. Compared with the previous circuits, the proposed circuit has a 14.5% reduction in propagation delay time and a 1.7% increase in power consumption. Therefore, the proposed XOR-XNOR is reduced power-delay- product (PDP) by 13.1% and energy-delay-product (EDP) by 26.0%. The proposed circuits are implemented with standard CMOS 0.18um technology and verified through SPICE simulation with 1.8V supply voltage.

• Current Optics and Photonics
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• v.3 no.5
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• pp.438-444
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• 2019

In this theoretical study, a line-defect photonic-crystal waveguide hosted in an annular photonic crystal was demonstrated to provide high-performance slow light with a wide band, low group-velocity dispersion, and a large normalized delay-bandwidth product. Combined with structural-parameter optimization and selective optofluid injection, the normalized delay-bandwidth product could be enhanced to a large value of 0.502 with a wide bandwidth of 58.4 nm in the optical-communication window, for a silicon-on-insulator structure. In addition, the group-velocity dispersion is on the order of $10^5$ ($ps^2/km$) in the slow-light region, which could be neglected while keeping the signal transmission unchanged.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.71-81
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• 2014

In this paper, the performance variations of tri-gate FinFET are analyzed for different fin shapes and source/drain epitaxy types using a 3D device simulator(Sentaurus). If the fin shape changes from a rectangular shape to a triangular shape, the threshold voltage increases due to a non-uniform potential distribution, the off-current decreases by 72.23%, and the gate capacitance decreases by 16.01%. In order to analyze the device performance change from the structural change of the source/drain epitaxy, we compared the grown on the fin (grown-on-fin) structure and grown after the fin etch (etched-fin) structure. 3-stage ring oscillator was simulated using Sentaurus mixed-mode, and the energy-delay products are derived for the different fin and source/drain shapes. The FinFET device with triangular-shaped fin with etched-fin source/drain type shows the minimum the ring oscillator delay and energy-delay product.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.769-776
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• 2023

In this paper, we designed an MLSA(Match-line Sense Amplifier) for low-power CAM(Content Addressable Memory). By using the MLSA and precharge controller, we reduced power consumption during CAM operation by employing a selective match-line charging technique to mitigate power consumption caused by mismatch. Additionally, we further reduced power consumption due to leakage current by terminating precharge early when a mismatch occurs during the search operation. The designed circuit exhibited superior performance compared to the existing circuits, with a reduction of 6.92% and 23.30% in power consumption and propagation delay time, respectively. Moreover, it demonstrated a significant decrease of 29.92% and 52.31% in product-delay-product (PDP) and energy-delay-product (EDP). The proposed circuit was validated using SPECTRE simulation with TSMC 65nm CMOS process.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.777-784
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• 2023

A sense amplifier is an essential peripheral circuit for designing a memory and is used to sense a small differential input signal and amplify it into digital signal. In this paper, a high-speed sense amplifier applicable to in-memory computing circuits is proposed. The proposed circuit reduces sense delay time through transistor Mtail that provides an additional discharge path and improves the circuit performance of the sense amplifier by applying m-GDI (: modified Gate Diffusion Input). Compared with previous structure, the sense delay time was reduced by 16.82%, the PDP(: Power Delay Product) by 17.23%, the EDP(: Energy Delay Product) by 31.1%. The proposed circuit was implemented using TSMC's 65nm CMOS process, while its feasibility was verified through SPECTRE simulation in this study.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.2
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• pp.351-356
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• 2022

The parity function can be implemented with XOR (exclusive-OR) and XNOR (exclusive NOR) circuit. In this paper we propose a high performance XOR-XNOR circuit. The proposed circuitreduced the internal load capacitance on critical path and implemented with 8 transistors. The circuit produces a perfect output signals for all input combinations. Compared with the previous circuits, the proposed circuit presents the improved characteristics in average propagation delay time, power dissipation, power-delay product (PDP), and energy-delay-product (EDP). The proposed circuits are implemented with standard CMOS 0.18um technology. Computer simulations using SPICE show that the proposed circuit realizes the expected logic functions and achieves a reasonable performance.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.2
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• pp.291-298
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• 2023

SRAM-based in-memory computing is one of the technologies to solve the bottleneck of von Neumann architecture. In order to achieve SRAM-based in-memory computing, it is essential to design efficient SRAM bit-cell. In this paper, we propose a low-power differential sensing 8+T SRAM bit-cell which reduces power consumption and improves circuit performance. The proposed 8+T SRAM bit-cell is applied to ripple carry adder which performs SRAM read and bitwise operations simultaneously and executes each logic operation in parallel. Compared to the previous work, the designed 8+T SRAM-based ripple carry adder is reduced power consumption by 11.53%, but increased propagation delay time by 6.36%. Also, this adder is reduced power-delay-product (PDP) by 5.90% and increased energy-delay- product (EDP) by 0.08%. The proposed circuit was designed using TSMC 65nm CMOS process, and its feasibility was verified through SPECTRE simulation.

• Journal of the Korea Society of Computer and Information
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• v.20 no.9
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• pp.1-10
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• 2015

In this paper, we propose a new variable latency L1 data cache architecture for multi-core processors. Our proposed architecture extends the traditional variable latency cache to be geared toward the multi-core processors. We added a specialized data structure for recording the latency of the L1 data cache. Depending on the added latency to the L1 data cache, the value stored to the data structure is determined. It also tracks the remaining cycles of the L1 data cache which notifies data arrival to the reservation station in the core. As in the variable latency cache of the single-core architecture, our proposed architecture flexibly extends the cache access cycles considering process variation. The proposed cache architecture can reduce yield losses incurred by L1 cache access time failures to nearly 0%. Moreover, we quantitatively evaluate performance, power, energy consumption, power-delay product, and energy-delay product when increasing the number of cache access cycles.

• Journal of IKEEE
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• v.18 no.2
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• pp.228-233
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• 2014

In this paper, we propose a CMOS-memristor hybrid circuit that can perform 4-bit multiplication for future energy-efficient computing in nano-scale digital systems. The proposed CMOS-memristor hybrid circuit is based on the parallel architecture with AND and OR planes. This parallel architecture can be very useful in improving the power-delay product of the proposed circuit compared to the conventional CMOS array multiplier. Particularly, from the SPECTRE simulation of the proposed hybrid circuit with 0.13-mm CMOS devices and memristors, this proposed multiplier is estimated to have better power-delay product by 48% compared to the conventional CMOS array multiplier. In addition to this improvement in energy efficiency, this 4-bit multiplier circuit can occupy smaller area than the conventional array multiplier, because each cross-point memristor can be made only as small as $4F^2$.

• Journal of the Korea Society of Computer and Information
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• v.14 no.12
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• pp.17-24
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• 2009

More recently, the Green Computing have become a important issue in all fields of industry. The energy efficiency cannot be over-emphasized. Microprocessor companies such as Intel Corporation design processors with taking both energy efficiency and performance into account. Nevertheless, general computer users typically utilize the CPU overclocking to enhance the application performance. The overclocking is traditionally considered as an evil in terms of the power consumption. In this paper, we present effective CPU overclocking schemes, which raise CPU frequency while keeping current CPU supply voltage for energy reduction and performance improvement. The proposed scheme gain both energy reduction and performance improvement. Evaluation results show that our proposed schemes reduce the processor execution time as much as 17% and total computer system energy as much as 5%, respectively. In addition, our effective CPU overclocking schemes reduce the Energy Delay Product (EDP) as much as 22%, on average.