• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.360-366
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• 2020

Focused electron beams with high energy acceleration are versatile probes. Focused electron beams can be used for high-resolution imaging and multi-mode nanofabrication, in combination with, molecular precursor delivery, in an electron microscopy environment. A high degree of control with atomic-to-microscale resolution, a focused electron beam allows for precise engineering of a graphene-based field-effect transistor (FET). In this study, the effect of electron irradiation on a graphene FET was systematically investigated. A separate evaluation of the electron beam induced transport properties at the graphene channel and the graphene-metal contacts was conducted. This provided on-demand strategies for tuning transfer characteristics of graphene FETs by focused electron beam irradiation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.925-928
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments and verifications of mechanism on FIB-CVD using SMI8800 made by Seiko. FIB-CVD has in fact proved to be commercially useful for repair processes because the beam can be focused down to 0.05$\mu\textrm{m}$ dimensions and below and because the same tool can be used to sputter off material with sub-micrometer precision simply by turning off the gas ambient. Recently the chemical vapour deposition induced ion beam has been required more deposition rate and accurate pattern because of trying to manufacture many micro and nano parts. Therefore this paper suggested the optimization parameters and discussed some mechanism of chemical vapour deposition induced ion beam on FIB-CVD for simple pattern.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.10
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• pp.109-116
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• 2007

Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

• Applied Microscopy
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• v.36 no.spc1
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• pp.25-33
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• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.356-358
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• 1993

With a focused laser beam, we make a microscopic change on a thin film, and organize the overall system that can observe the change with a microscope. This system utilizes the energy of a laser beam which is focused by a simple lense system. That is a laser beam which has its waist at working distance of a lense. The microscopic change induced by the energy of laser beam focused through a lense can be observed in real time. The experiment with this system shows that the 10mW He-Ne 632.8nm laser can change the black vinyl instantaneously.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.4
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• pp.479-486
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• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• Applied Microscopy
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• v.48 no.4
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.98-102
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• 2016

The level set method has recently become popular in the simulation of semiconductor processes such as etching, deposition and photolithography, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this research, full three-dimensional level set simulation has been developed for the investigation of focused ion beam processing. Especially, focused ion beam induced nanodot formation was investigated with the consideration of three-dimensional distribution of redeposition particles which were obtained by Monte-Carlo simulation. Experimental validations were carried out with the nanodots that were fabricated using focused $Ga^+$ beams on Silicon substrate. Detailed description of level set simulation and characteristics of nanodot formation will be discussed in detail as well as surface propagation under focused ion beam bombardment.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1531-1534
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• 2005

Nano pattern is being utilized to produce micro optical components, sensors, and information storage devices. In this study, a study on nano pattern fabrication using raster-scan type Focused Ion Beam (FIB) milling is introduced. Because the intensity of ion beam has Gaussian distribution, the overlapping of the Gaussian beam results in a 3D pattern, and the shape of the pattern can be adjusted by variation of FIB milling parameters, such as overlap, ion dose, and dwell time. The Gaussian shape of single beam intensity has been investigated by experiment, and 3D nano patterns with pitch of 200nm generated by FIB is demonstrated.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.