• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.107-117
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• 2010

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.1-4
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• 2002

The numerical alaysis of optical device, silicabased device, are presented. The purpose of this paper is to simulate and to design a 8-channel optical wavelength division multiplexer(OWDM) based on Mach-Zehnder Interferometer(MZI) with wavelength spacing between channels Δλ=0.8 nm at central wavelength λ=1.55 ${\mu}{\textrm}{m}$. In initial condition fur simulating, we assumed as follows. A channel waveguide is made from silica based P-doped SiO2 core layers in order to coupling with a fiber easily and its core dimension was 6 ${\mu}{\textrm}{m}$$\times$6 ${\mu}{\textrm}{m}$. The core and clad index of channel waveguide were 1.455 and 1.444, separately, at λ=1.55 ${\mu}{\textrm}{m}$. Where, the separation between channel waveguides in coupling region was 3 ${\mu}{\textrm}{m}$. As a result of analysis, a group mode index of channel waveguide was 1.4498370, was gained by Hermite-Gaussian Method(HGM). Also, the channel spacing was determined by the waveguide arm length difference and was Δλ=0.8 nm as like a proposed condition. The central wavelength of a designed-multiplexer was activated about wavelength λ=1.55 ${\mu}{\textrm}{m}$, and we certificated that it can be used to 8-channel optical wavelength division multiplexer/demultiplexer.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1247-1249
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• 1993

In this paper, NUDFET(NonUniformly Doped Field Effect Transistor) is presented as an alternative which offers the possibility of reducing the power necessary to operate switching circuits without a substantial loss in speed. The purpose of this NUDFET is to modify the electric field profile in order to cause carrier velocity saturation to occur at a lower voltage than it would occur in the uniformly doped device of the same channel length. The more MESFET and NUDFET circuits are realized, the more accurate model ins the performance of these devices become required. Analytic model ins was replaced by numerical analysis because of the complexity of device configuration. In this paper, FEM is selected because of simpler local mesh refinement and smaller computer memory than FDM. For accurate analysis, this paper has applied the Scharfetter-Gummel(S-G) Scheme and seven-point Gaussian Quadrature rule to assembly of the finite-element stiffness matrices and right-hand side vector of the semiconductor equations.