• Structural Monitoring and Maintenance
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• v.9 no.2
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• pp.129-155
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• 2022

In this study, parametric analyses on a hoop-type PZT (lead-zirconate-titanate) interface are performed to estimate the effects of the PZT interface's materials and geometries on sensitivities of impedance responses under strand breakage. The paper provides a guideline for installing the PZT interface suitable in tendon anchorages for damage-sensitive impedance signatures. Firstly, the concept of the PZT interface-based impedance monitoring technique in prestressed tendon anchorage is briefly described. A FE (finite element) analysis is conducted on a multi-strands anchorage equipped with a hoop-type PZT interface for analyzing materials and geometric effects. Various material properties, geometric sizes of the interface, and PZT sensor are simulated under two states of prestressing force for acquiring impedance responses. Changes in impedance signals are statistically quantified to analyze the effect of these factors on damage-sensitive impedance monitoring in the tendon anchorage. Finally, experimental analyses are performed to demonstrate the effects of materials and geometrical properties of the PZT interface on damage-sensitive impedance monitoring.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.684-689
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• 2008

In this study, homogenization method combined with the effective interface model for the characterization of properties of the nanoparticulate composites is developed. In order to characterize particle size effect of nanocomposites, effective interface model has been developed. The application range of analytical micromechanics approach is limited because a simple analytical approach is valid only for simple and uniform geometry of fiber particles. Therefore this study focuses on the analysis of mechanical properties of the effect interface through the continuum homogenization method instead of using analytical micromechanics approach. Using the homogenization method, elastic stiffness properties of the effective interface are numerically evaluated and compared with the analytically obtained micromechanics solutions. The suggested homogenization method is expected to be applied to optimization problems for nanocomposite design.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Journal of the Korean Geotechnical Society
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• v.30 no.9
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• pp.29-39
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• 2014

In this study, model pile-load test with numerical analysis was carried out to compare and analyze pile behaviour according to interface properties. In the model test, Close Range Photogrammetry (CRP) was chosen to measure the ground deformation. In addition, model steel and concrete piles were used. Based on the model pile test, interface elements around the model pile were used to simulate the slip effect. Interface properties were adopted as interface reduction factor $R_{inter}$. Interface reduction factor, $R_{inter}$ plays a key role in the interface properties. Through this study, it was found that the model ground behaviour measured by CRP corresponded well to the one predicted by the numerical analysis. And, the interface strength reduction factor, $R_{inter}$ value of the steel pile was higher than that of the concrete pile.

• Geomechanics and Engineering
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• v.36 no.2
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• pp.145-156
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• 2024

The mechanical properties of the concrete-frozen soil interface play a significant role in the stability and service performance of construction projects in cold regions. Current research mainly focuses on the precast concrete-frozen soil interface, with limited consideration for the more realistic cast-in-place concrete-frozen soil interface. The two construction methods result in completely different contact surface morphologies and exhibit significant differences in mechanical properties. Therefore, this study selects silty clay as the research object and conducts direct shear tests on the concrete-frozen soil interface under conditions of initial water content ranging from 12% to 24%, normal stress from 50 kPa to 300 kPa, and freezing temperature of -3℃. The results indicate that (1) both interface shear stress-displacement curves can be divided into three stages: rapid growth of shear stress, softening of shear stress after peak, and residual stability; (2) the peak strength of both interfaces increases initially and then decreases with an increase in water content, while residual strength is relatively less affected by water content; (3) peak strength and residual strength are linearly positively correlated with normal stress, and the strength of ice bonding is less affected by normal stress; (4) the mechanical properties of the cast-in-place concrete-frozen soil interface are significantly better than those of the precast concrete-frozen soil interface. However, when the water content is high, the former's mechanical performance deteriorates much more than the latter, leading to severe strength loss. Therefore, in practical engineering, cast-in-place concrete construction is preferred in cases of higher negative temperatures and lower water content, while precast concrete construction is considered in cases of lower negative temperatures and higher water content. This study provides reference for the construction of frozen soil-structure interface in cold regions and basic data support for improving the stability and service performance of cold region engineering.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.380-387
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• 2011

Wire brushing, which is a typical surface preparation method for roll bonding, has recently been highlighted as a potentially effective method for surface nanocrystallization. In the present study, the microstructure evolution and hardness of the wire-brushed surface and roll-bonded interface of a 1050 aluminum sheet were investigated. Wire brushing formed protruded layers with a nanocrystalline structure and extremely high surface hardness. After roll bonding, the protruded layers remained as hard layers at the interface. Due to their hardness and brittleness the interface hard layers, can affect the interface bonding properties and also play an important role determining the mechanical properties of multi-layered clad sheets.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.21-26
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• 1988

Composition with O-3 connectivity were fabricated from PZT and phenolic resin powders. These composites were investigated for dielectric and pizoelectric properties with PZT-polymer interface porosity variation. The interface porosity dependence of dielectric and piezoelectric properties was especially discussed by porosity factors. The interface porosity dependence of piezoelectric constant was larger than that of dielectric constant. It was considered that the interface pore plays the role of a stress buffer. Thus the local stress applied on PZT particles in the composite was remarkably diminish.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2010.04a
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• pp.459-464
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• 2010

The dynamic propagation of an interface crack between two dissimilar functionally graded layers under anti-plane shear is analyzed using the integral transform method. The properties of the functionally graded layers vary continuously along the thickness. A constant velocity Yoffe-type moving crack is considered. Fourier transform is used to reduce the problem to a dual integral equation, which is then expressed to a Fredholm integral equation of the second kind. Numerical values on the dynamic energy release rate (DERR) are presented. Followings are helpful to increase of the resistance of the interface crack propagation of FGM: a) increase of the gradient of material properties; b) increase of the material properties from the interface to the upper and lower free surface; c) increase of the thickness of FGM layer. The DERR increases or decreases with increase of the crack moving velocity.