• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.462-467
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• 2011

In order to understand why annealing at $480^{\circ}C$ for several hour prevents the initiation of PWSCC, the residual stress variation with isothermal annealing at $480^{\circ}C$ and isochronal annealing between 480 and $800^{\circ}C$ in cold rolled Alloy 600 was investigated by the XRD method. The isothermal annealing decreased residual stress slightly in the rolling direction but not in the transverse direction, whereas the isochronal annealing for two hours increased residual stress. It seemed that the decrease in residual stress by isothermal annealing was due to lattice contraction by an ordering reaction because the isothermal annealing increased hardness. The effects of the isochronal annealing could be interpreted as the influence of thermal expansion and a disordering reaction.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.303-308
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• 2000

The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.375-381
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• 2002

N-type ${\beta}-FeSi_2$ with a nominal composition of $Fe_{0.98}Co_{0.02}Si_2$ powders has been produced by mechanical alloying process and consolidated by vacuum hot pressing. As-milled powders were of metastable state and fully transformed to ${\beta}-FeSi_2$ phase by subsequent isothermal annealing. However, as-consolidated $Fe_{0.98}Co_{0.02}Si_2$ consisted of untransformed mixture of ${\alpha}-Fe_2Si_ 5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting ${\beta}-FeSi_2$ phase. The transformation behavior of ${\beta}-FeSi_2$ was investigated by utilizing DTA, a modified TGA under magnetic field, SEM, and XRD analyses. Isothermal annealing at $830^{\circ}C$ in vacuum led to the thermoelectric semiconducting ${\beta}-FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties were remarkably improved by isothermal annealing due to the transformation from metallic $\alpha$ and $\varepsilon$ phases to semiconducting phases.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.218-223
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• 2004

P-type $\beta$-FeSi$_2$ with a nominal composition of $Fe_{0.92}Mn_{0.08}Si_2$ powders has been produced by mechanical alloying process. As-milled powders were spray dried and consolidated by atmospheric plasma thermal spraying as a rapid sintering process. As-milled powders were of metastable state and fully transformed to $\beta$-$FeSi_2$ phase by subsequent isothermal annealing. However, as-thermal sprayed $Fe_{0.92}Mn_{0.08}Si_2$ consisted of untransformed mixture of $\alpha$-$Fe_2Si_{5}$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce transformation to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase. Isothermal annealing at $845^{\circ}C$ in vacuum gradually led to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties of $\beta$-$FeSi_2$ materials before and after isothermal annealing were evaluated. Seebeck coefficient increased and electric conductivity decreased with increasing annealing time due to the phase transition from metallic phases to semiconducting phases. Thermoelectric properties showed gradual increment, but overall properties appeared to be inferior to those of vacuum hot pressed specimens.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.2
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• pp.72-78
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• 2014

Isothermal transformation behavior of a 10% Cr heat resistant steel fabricated by centrifugal casting process was investigated. Normalized specimen at $1100^{\circ}C$ for 1 hour was isothermally annealed at temperature range between $600^{\circ}C$ and $700^{\circ}C$ with various time. The annealed specimen had eutectoid structure which was generated along austenitic grain boundary during isothermal annealing. Areal fraction of eutectoid structure increased up to 25% after holding at $700^{\circ}C$ for 20 hours. It was observed that austenitic matrix was transformed to ferrite structure and fine $M_{23}C_6$ carbides with increase of annealing time. Time-temperature-transformation diagram of the centrifugally cast 10% Cr steel with 0.18 wt% C was plotted based on the results of isothermal transformation behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1277-1280
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• 2007

Isothermal activation annealing was carried out using boron doped SLS poly-using an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.