• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.65.2-65.2
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• 2011

일반적으로 결정질 실리콘 태양전지에서는 junction depth가 얕아짐으로써 단파장 영역에서의 수집효율이 향상되고 Jsc가 상승하기 때문에 junction depth가 얕은 것이 좋다. 또, 태양전지의 효율을 높이기 위해서는 낮은 재결합 속도가 필요한데 이를 위해서도 얕은 junction depth가 필요하다. 하지만 junction depth가 너무 얕으면 FF와 Voc가 낮아져 효율이 떨어지므로 junction depth를 최적화 할 필요가 있다. 본 논문에서는 PC1D 시뮬레이션을 사용하여 표면 농도를 고정시키고 junction depth를 가변하면서 이에 따른 cell의 parameter변화를 관찰하였다. 그 결과, 면저항 $120{\Omega}/{\square}$에서부터 효율이 saturation되었고, 그에 따른 parameter 값은 FF=76.28%, Jsc=$38.17mA/cm^2$, Voc=596.5V이며 junction depth가 $0.1726{\mu}m$일 때 효율은 17.37%이다.

• Journal of information and communication convergence engineering
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• 제5권4호
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• pp.324-327
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• 2007

In this paper, the p-n junction depth with nondestructive method by using scanning electron microscopy (SEM) is determined and conformed. By measuring the critical short circuit current on the p-n junction which induced by electron beam and calculating generation range, the diffusion depth can be obtained. It can be seen that values destructively measured by constant angle lapping and nondestructively by this study almost concur. As this result, it is purposed that diffusion depth of p-n junction can be easily measured by nondestruction. This nondestructive method can be recommended highly to the industrial analysis.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.50-54
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• 2002

Penetration depth of Nb electrodes in $Nb/A1O_x/Nb$ Josephson junctions has been measured by resistive method. For a given applied field, the total flux through the junction is temperature dependent because the penetration depth of Nb electrode varies with temperature. If the total flux equals an integral multiple of the flux quantum at certain temperatures, resistive peaks appear at those temperatures. The penetration depth of Nb can be determined by applying the above condition, The temperature dependence of penetration depth was found to be well described by the two-fluid model.

• Applied Microscopy
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• 제50권
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• Journal of Periodontal and Implant Science
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• 제31권2호
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• pp.477-488
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• 2001

The present study evaluated of regeneration effect of platelet rich plasma on the treatment of grade II furcation involvement, with coralline calcium phosphate bone in humans. 30 teeth with grade II furcation defect were selected and 15 teeth(control) were treated with coralline calcium phosphate bone, the others(test) were treated with coralline calcium phosphate bone and platelet rich plasma. Pocket depth, clinical attachment level, width of keratinized gingiva width were measured at baseline, postoperative 3, 6months. from cementoenamel junction to alveolar crest and fundus were measured at baseline, 6months(re-entry). Both groups were statistically analyzed by Wilcoxon signed Ranks Test & Mann-whitney Test using SPSS program(5% significance level). The results were as follows: 1. Pocket depth, clinical attachment level, keratinized gingva width, cementoenamel junction - alveolar crest, cementoenamel junction - fundus were not differ significantly in both groups at baseline 2. The change of pocket depth, clinical attachment level, keratinized gingva width, cementoenamel junction - alveolar crest, cementoenamel junction - fundus in both groups were decreased significantly at 3, 6months(p<0.05). 3. The change of pocket depth, clinical attachment level in test group decreased significantly than control at 3, 6months(p<0.05). 4. The change of keratinized gingiva width, cementoenamel junctional - alveolar crest, cementoenamel junction - fundus were not differ significantly in both groups at 3, 6months. 5. The pocket depth, clinical attachment level, keratinized gingiva width exhibited marked changes at 3 months in both groups. In conclusion, the results of this study suggest that platelet rich plasma have adjunctive clinical treatment effect to periodontal regeneration in grade II furcation defects.

• 대한전자공학회논문지
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• 제17권5호
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• pp.22-27
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• 1980

새로운 불순물(dopant) 원료인 스핀온 쏘스를 사용하여 붕소를 실리콘천에 이단계 확산시키는 공정을 검토하였다. predeposition후의 확산충의 두께의 drive-in 확산후의 두께에 비하여 무시할 수 없이 큰 경우에 대하여 이단계 확산공정이 끝난 후의 확산층의 두께를 예측할 수 있는 간단한 방법을 제안하였다. 제안된 방법에 의하여 불순물 확산충의 두께를 예측하였으며 그 결과를 실험적으로 측정된 값과 비교하였다.

• 한국산업융합학회 논문집
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• 제10권4호
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• pp.275-283
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• 2007

This study aims at the calculation of a variation of flow characteristics of main channel for tributary inflow in river junction. So this study was analyzed the variation of flow depth and velocity in main channel for a change of inflow degree. For this purpose, FLDWAV model are carried out for variations of $30^{\circ}$, $60^{\circ}$ and $90^{\circ}$ tributary inflow at junction. Results show that velocity ratio(V1/V3) increases and flow depth ratio(H1/H3) decreases for discharge ratio(Q1/Q3) of upstream and downstream when degree increases in junction. And FLDWAV model was applied at a real river junctions. Selected area is a junction of Gumho river and Sin stream. Results show that pattern is similar to a virtual channel.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.286-289
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• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.623-626
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• 2004

본 논문은 주사형 전자 현미경을 사용하여 간단한 형태의 반도체 소자뿐만 아니라 집적회로의 내부 P-N 접합 층의 깊이를 소자를 파괴하지 않고 패키지 상태 그대로 측정 할 수 있는 방법이다. 전자 현미경에서 주사되는 전자빔의 에너지에다 반도체 내에 여기 되는 전류를 측정하여 이 임계치에서 전자빔의 침투 범위를 산출하여 접합의 깊이를 측정한다. 실제 시판되고 있는 소자를 사용하여 SEM 의 전자 주사빔 에너지를 변화시키면서 외부의 전류 변화를 측정하였다. 소자 내부의 전자와 정공 생성율은 접합에서 더 많이 발생되므로 이를 고려하여 화산 깊이를 측정하였다. 이렇게 측정한 결과와 이후에 소자를 lapping 하여 파괴 측정한 측정치와 비교 한 결과 일치함을 알 수 있었다.