• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.518-521
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• 2003

Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

• Polymer Science and Technology
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• v.15 no.3
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• pp.260-273
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• 2004

Layer-by-layer 자기조립방법 (self-assembly method) 이라고 불리는 담지자기조립방법 (dip self-assembly method)을 이용한 다층초박막은 다양한 전기적, 자기적 성질을 갖는 물질뿐만 아니라 DNA 또는 효소 (enzyme)같은 바이오 물질들을 기판의 크기나 형태에 관계없이 각각의 층에 나노미터 두께로 삽입시킬 수 있음에 따라서 초박막안에 우리가 원하는 특정 성질을 부여할 수 있다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.600-604
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• 1996

High-T$_{c}$, superconducting wire is very important element for the application of electrical power systems. But it is very difficult to develope the long high T, wire with excellent properties. BiSrCaCuO multi-layer tapes are fabricated by a rolling method and pressing method sintered for several step at 840.deg. C. The critical current densities of 637 filament multi-layer tapes sintering 100 hours fabricated by the rolling method and pressing method are 1.3*10$^{4}$ A/cm$^{2}$ and 5.5*10$^{3}$ A/cm$^{2}$. The critical cur-rent densites of multi-layer tapes made by rolling method are found to be better than those fabricated by the powder-in-tube method and pressing process. As result, the rolling method is the best way to fabricated the multi-layer filament.t.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• Journal of Korea Multimedia Society
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• v.19 no.12
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• pp.1992-1999
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• 2016

In layered communication architecture, each layer is designed to service its own functions to higher layer while getting serviced by lower layer. Usually layered architectures are not optimized in a total view of whole services and functions. So cross layer design pursues performance enhancements by optimizing in various ways. In LTE, MAC layer uses HARQ mechanism and RLC layer uses ARQ mechanism for retransmission. According to the 3GPP 36.331 specification, two layers' cooperation may not happen in an optimized way. This paper suggests an adaptive MAC layer approach which RLC layer's function might be initiated in MAC layer in advance to utilize MAC layer's idling wasting time for RLC layer's next decision. This adaptive ARQ method in MAC layer speeds up the next retransmission and reduces the overall transmission time. Emulation shows the improved performance in total retransmission time and retransmission success ratio. In wireless shadow area, the retransmission occurs frequently. Our approach has strong points in this poor wireless condition.