• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.125-131
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• 2001

When the program voltage is applied to a word line, a part of the boosted channel charge in inhibited bit lines is lost due to the coupling between the string select line (SSL) and the adjacent word line. This phenomenon causes the program disturbance in the cells connected to the inhibited bit lines. This program disturbance becomes more serious, as the word line pitch is decreased. To reduce the word line coupling, the rising edge of the word-line voltage waveform was changed from a pulse step into a ramp waveform with a controlled slope. The word-line ramping circuit was composed of a timer, a decoder, a 8 b D/A converter, a comparator, and a high voltage switch pump (HVSP). The ramping voltage was generated by using a stepping waveform. The rising time and the stepping number of the word-line voltage for programming were set to $\mutextrm{m}-$ and 8, respectively,. The ramping circuit was used in a 512Mb NAND flash memory fabricated with a $0.15-\mutextrm{m}$ CMOS technology, reducing the SSL coupling voltage from 1.4V into a value below 0.4V.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.2
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• pp.178-184
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• 2004

In this paper, we designed an image processing system for the high speed line-scan camera which adopts the new memory model we proposed. As a resolution and a data rate of the line-scan camera are becoming higher, the faster image processing systems are needed. But many conventional systems are not sufficient to process the image data from the line-scan camera during a very short time. We designed the memory controller which eliminates the time for transferring image data from the line-scan camera to the main memory with high-speed SRAM and has a dual-port configuration therefore the DSP can access the main memory even though the memory controller are writing the image data. The memory controller is implemented by VHDL and Xilinx SPARTAN-IIE FPGA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.6
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• pp.901-909
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• 1990

With a wide spread of 32 bit personal computers, a simple structure and high performance memory system have been highly required. In this paper, a memory block is constructed by using a modified hierarchical bit line in which the DRAM bit line and the latch which works as a SRAM cell are integrated by an interface gate. And the new architecture memory DSRAM(Dynamic Static RAM) is proposed by interleaving the 16 memory block. Because the DSRAM works with 16 page, the page is miss ratio becomes small and the RAS precharge time which is incurred by page miss is shortened. So the DSRAM can implement an optimum page interleaving and it has good compatibility to the existing DRAMs. The DSRAM can be widely used in small computers as well as a high performance memory system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.1-8
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• 2000

In this paper, design of sense amplifier for a flash memory minimizing bit line disturbance due to common bit line is presented. There is a disturbance problem at output modes by using common bit line, when the external devices access an internal flash memory. This phenomenon is resulted form hot carrier between floating gates and bit lines by thin oxide thickness. To minimize bit line disturbance, lower it line voltage is required and need sense amplifier to detect data existence in lower bit line voltage. Proposed circuits is operated at lower bit line voltage and we fabricated a embedded flash memory MCU using 0.6u technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.14-24
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• 2009

Memory cell array and peripheral circuits are designed for system on panel style frame buffer. Moreover, a parallel test methodology to test multiple blocks of memory cells is proposed to overcome low yield of system on panel processing technologies. It is capable of faster fault detection compared to conventional memory tests and also applicable to the tests of various embedded memories and conventional SRAMs. The various patterns of conventional test vectors can be used to enhance fault coverage. The proposed testing method is also applicable to hierarchical bit line and divided word line, one of design trends of recent memory architectures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.286-291
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• 2015

For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

• Electronics and Telecommunications Trends
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• v.35 no.3
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• pp.55-65
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• 2020

With the development of nonvolatile memory technology, Intel has released the Optane datacenter persistent memory module (DCPMM) that can be deployed in the dual in-line memory module. The results of research and experiments on Optane DCPMMs are significantly different from the anticipated results in previous studies through emulation. The DCPMM can be used in two different modes, namely, memory mode (similar to volatile DRAM: Dynamic Random Access Memory) and app direct mode (similar to file storage). It has buffers in 256-byte granularity; this is four times the CPU (Central Processing Unit) cache line (i.e., 64 bytes). However, these properties are not easy to use correctly, and the incorrect use of these properties may result in performance degradation. Optane has the same characteristics of DRAM and storage devices. To take advantage of the performance characteristics of this device, operating systems and applications require new approaches. However, this change in computing environments will require a significant number of researches in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.177-184
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• 2017

High performance non-volatile memory system can mitigate the gap between main memory and storage. However, no single memory devices fulfill the requirements. Non-volatile Dual In-line Memory Module (NVDIMM) consisted of DRAMs and NAND Flashes has been proposed to achieve the performance and non-volatility simultaneously. When power outage occurs, data in DRAM is backed up into NAND Flash using a small-size external energy storage such as a supercapacitor. Backup and restore operations of NVDIMM do not cooperate with the operating system in the NVDIMM standard, thus there is room to optimize its operation. This paper analysis the operation of NVDIMM and proposes a method to reduce backup and restore time. Particularly, data compression is introduced to reduce the amount of data that to be backed up and restored. The simulation results show that the proposed method reduces up to 72.6% of backup and restore time.