• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.80-85
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• 2007

The passivation is one of the important technologies for protection of the devies from damage. In this paper, we fabricated $0.1{\mu}m\;{\Gamma}$--gate InAIAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on a GaAs substrate. And then the wafer with MHEMTs was divided into two pieces; one for passivation and another for without passivation experiments. The passivations were done by using both low-k BCB and Si3N4 thin films. DC and RF performances were measured and the results are compared. The MHEMTs with BCB passivation show lower degradation than ones with Si3N4 passivation.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.471-472
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• 2006

The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.594-596
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• 2009

Amorphous silicon nitride (a-SiNx) passivation film as a passivation layer of TFT-LCDs was deposited by AC-reactive sputtering at low temperature. As a result, the electrical characteristics and reliability of TFT with novel passivation showed the same level as the conventional TFT. Finally, we have developed 47"Full HD IPS TFT-LCDs with sputtered amorphous silicon nitride. It is suitable for low temperature based applications such as OTFT and Flexible display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.223-224
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• 2008

Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.892-896
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• 2005

In this paper, key issues of stainless steel foil substrates for display applications have been described. We studied and analyzed technical issues on substrate passivation/planarization to control surface roughness and capacitive coupling from conductive substrates. A thick (either multiple or single) passivation/planarization layer needs to be applied on the nonelectronic-grade stainless steel substrate to provide a smooth surface and electrical insulation from the conductive substrate. Especially for large size, high-resolution display applications, low k and thick passivation/planarization layers should be used for appropriate capacitive coupling. Based on our initial study, a unit area capacitance of less than $2nF/cm^2$ of passivation/planarization layers is needed for 32" HD TV OLED displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.996-998
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• 2004

In this study, we tested parylene as the passivation layer for flexible organic light emitting diodes (FOLEDs).Parylene as passivtion layer has several advantages which are good optical transparent and low moisture penetration. For more an effective passivation of FOLEDs, we suggest hybrid passivation layer with parylene and silicon oxide. We compared electrical properties and stability of the device with and without passivation layer. The lifetime of FOLED with hybrid passivation layer was increased over three times than that of non-passivated of FOLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.