• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.662-665
• /
• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.7-9
• /
• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Transactions on Electrical and Electronic Materials
• /
• 제10권3호
• /
• pp.80-84
• /
• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권2호
• /
• pp.158-164
• /
• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.8-12
• /
• 1994

Solid solutions $Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ (x = 0.0 - 1.0) composed of strontium-tantalate (low Curie temperature) and strontium-niobate (high Curie temperature) were prepared by the conventional mixed oxide method and the molten salt synthesis method (flux method). Phase relation, sintering temperature, grain-orientation and dielectric properties were investigated for sintered ceramic samples with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. Single phase $Sr_2$$Nb_2$$O_{7}$ powder was synthesized by using flux method at lower temperatures, and sintering temperature was also reduced by using flux method derived powder than using mixed-oxide derived powder. Sintering characteristics and dielectric properties of specimens prepared by flux method were better than those derived through the conventional method.

• 한국전기전자재료학회논문지
• /
• 제16권11호
• /
• pp.975-978
• /
• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• 한국세라믹학회지
• /
• 제29권10호
• /
• pp.827-835
• /
• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.350-353
• /
• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.642-645
• /
• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.288-289
• /
• 2006

We studied the effect of sol-gel processing and sintering temperature on the microwave properties of $MgCo_2(VO_4)_2$ system(MCV) which is applicable to LTCC(low-temperature cofired ceramics). The MCV was synthesized by sol-gel process using solution that contains precursor molecules for Mg, Co, and V. SEM analysis shows that the average particle size is ${\sim}1{\mu}m$ and size distribution is very uniform compared to the one prepared by conventional solid-state reaction process. Highly dense samples were obtained at the sintering temperature range of $750^{\circ}C{\sim}930^{\circ}C$. The maximum $Q{\times}f_0$ value of 55,700GHz, dielectric constant(${\varepsilon}_r$) of 10.41 and temperature coefficient(${\tau}_f$) of $-85ppm/^{\circ}C$ was obtained at the sintering temperature of $930^{\circ}C$. The superior microwave properties of sol-gel processed MCV relative to conventional solid-state reaction processed one is remarkable especially at lower sintering temperatures such as $750^{\circ}C$ and $800^{\circ}C$.