• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.87-92
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• 2011

In this paper, we got the 800 ~ 900 MHz path loss model for Russia PNG area using the free space model and the Okumura-Hata Model. In order to add new regional properties to the existing path loss model, the mean square error technique is used to obtain the correction factor. The correction factors for the free space and the Hata model are 28, 13 dB respectively. By applying this correction factors, the new Russain PNG path loss model is proposed.

• Journal of the Institute of Convergence Signal Processing
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• v.12 no.3
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• pp.194-198
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• 2011

In this paper, we obtained the path loss characteristics in the 850 MHz for Russia area by using the free space path loss model and Okumura-Hata path loss model. In order to extract the additional path loss model parameter from the new Russian regional properties, the mean square error technique is used to obtain the correction factor. According to the obtained correction factor, the differences for the free space and Hata path loss model are 17, 6 dB in the 5 ~ 10 Km, 28, 14 dB in the 10 ~ 15 Km, and 35, 18 dB in the 15 ~ 20 Km. By applying the correction factors, the appropriate partial path loss models for the measured Russain area are proposed.

• Publications of The Korean Astronomical Society
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• v.11 no.1
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• pp.125-137
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• 1996

The collision of two particles in the accretion disk may lead to be a mechanism of heat generation. By using hydrodynamic equations, the mean free path, the collision frequency and the deflection angle due to the collision of the particles are derived as a function of the mass accretion rate. The mean free path seems to be a smaller fraction compared to the dimension parameter of the system. The radiative flux in the disk is obtained under the influence of the collision of the particles.

• Advances in materials Research
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• v.2 no.2
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• pp.93-98
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• 2013

Objective of this study is to calculate gamma buildup factors for pointed and isotropic gamma sources in depleted uranium, uranium dioxide, natural uranium, tin, water and concrete using MCNP4C code. The thickness of the media ranges from 0.5 to 10 mean-free-path (mfp) and gamma energy ranges from 0.5 to 10 MeV. Owing to the outstanding accuracy of MCNP in calculation involving gamma interaction, results fairly match those reported previously. The maximum relative error is 2%.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.150-151
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• 2002

In recent years, semi-metallic Bismuth (Bi) has attracted significant attention due to very large magnetoresistance (MR) at room temperature originating from long carrier mean free path l and small effective carrier mass m＊[1, 2]. In particular, the MR behavior and long carrier mean free path l in Bi thin films can be exploited for spintronic devices, e.g. magnetic field sensors and spin-valve transistors. In present work, we present the magnetotransport properties of the electroplated and sputtered Bi thin films in the temperature range 4-300 K. (omitted)

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.9
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• pp.621-627
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• 2016

In this study, we present a model that can be used to calculate the phonon-surface scattering rate directly from the experimental data on phonon mean free path (MFP) spectra of nanostructures. Using this model and the recently reported length-dependent thermal conductivity measurements on $Si_{0.9}Ge_{0.1}$ nanowires (NWs), we investigate the spectral reduced MFP distribution and the spectral phonon-surface scattering rate in the $Si_{0.9}Ge_{0.1}$ NWs. From the results, it is found that the phonon transport properties with the material and the phonon frequency dependency of the spectral phonon-surface scattering rate per unit length of the NW. The model presented in this study can be used for developing heat transfer analysis models of nanomaterials, and for determining the optimum design for tailoring the heat transfer characteristics of nanomaterials for future applications of phonon nanoengineering.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.5
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• pp.341-346
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• 2017

Knowing the mean free paths (MFPs) of thermal phonons is an essential step in performing heat transfer analysis for nanomaterials, and in determining the optimum design for tailoring the heat transfer characteristics of nanomaterials. In this study, we present a method that can be used to calculate accurately the phonon MFP spectra of nanostructures based on simple phonon kinetic theory. Here, the kinetic theory may be employed by extracting only the diffusive-transport part of the phonon spectrum (i.e., the MFPs are less than a thermal length). By considering phonon dispersion and polarization effects, the phonon MFP distributions of silicon at room temperature are calculated from phonon transport properties and the spectral MFP. Our results are validated by comparison with those of the first principle and MFP spectroscopy data.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.11B
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• pp.946-955
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• 2004

It is shown that the do Bruijn graph (dBG) can be used as an architecture for interconnection network and a suitable structure for parallel computation. Recent works have classified dBG based routing algorithms into shortest path routing and fault tolerant routing but investigation into fault free shortest path (FFSP) on dBG has been non-existent. In addition, as the size of the network increase, more faults are to be expected and therefore shortest path dBG algorithms in fault free mode may not be suitable routing algorithms for real interconnection networks, which contain several failures. Furthermore, long fault free path may lead to high traffic, high delay time and low throughput. In this paper we investigate routing algorithms in the condition of existing failure, based on the Bidirectional do Bruijn graph (BdBG). Two FFSP routing algorithms are proposed. Then, the performances of the two algorithms are analyzed in terms of mean path lengths and discrete set mean sizes. Our study shows that the proposed algorithms can be one of the candidates for routing in real interconnection networks based on dBG.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.367-377
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• 2001

Plasma is generated by electrical discharge. Most plasma generation has been carried out at low-pressure gas typically less than one millionth of atmospheric pressure. Plasmas are in general generated from impact ionization of neutral gas molecules by accelerated electrons. The energy gain of electrons accelerated in an electrical field is proportional to the mean free path. Electrons gain more energy at low-pressure gas and generate plasma easily by ionization of neutrals, because the mean free path is longer. For this reason conventional plasma generation is carried out at low pressures. However, many practical applications require plasmas at high-pressure. In order to avoid the requirement for vacuum pumps, researchers in Korea start to develop plasmas in high-pressure chambers where the pressure is 1 atmosphere or greater. Material processing, environmental protection/restoration and improved energy production efficiency using plasmas are only possible for inexpensive bulk plasmas. We thus generate plasmas by new methods and plan to set foundations for new plasma technologies for $21^{st}$ / century industries. This technological research will play a central role in material processing, environmental and energy production industries.