• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.223-231
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• 2015

As smartphones support a variety of applications and their memory demand keeps increasing, the design of an efficient memory management policy is becoming increasingly important. Meanwhile, as nonvolatile memory (NVM) technologies such as PCM and STT-MRAM have emerged as new memory media of smartphones, characterizing memory references for NVM-based smartphone memory systems is needed. For the deep understanding of memory access features in smartphones, this paper performs comprehensive analysis of memory references for various smartphone applications. We first analyze the temporal locality and frequency of memory reference behaviors to quantify the effects of the two properties with respect to the re-reference likelihood of pages. We also analyze the skewed popularity of memory references and model it as a Zipf-like distribution. We expect that the result of this study will be a good guidance to design an efficient memory management policy for future smartphones.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.153-153
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• 2009

We investigated the dependence of the memory margin of the Cap-less memory cell on the strain of top silicon channel layer and also compared kink effect of strained Cap-less memory cell with the conventional Cap-less memory cell. For comparison of the characteristic of the memory margin of Cap-less memory cell on the strain channel layer, Cap-less transistors were fabricated on fully depleted strained silicon-on-insulator of 0.73-% tensile strain and conventional silicon-on-insulator substrate. The thickness of channel layer was fabricated as 40 nm to obtain optimal memory margin. We obtained the enhancement of 2.12 times in the memory margin of Cap-less memory cell on strained-silicon-on-insulator substrate, compared with a conventional SOI substrate. In particular, much higher D1 current of Cap-less memory cell was observed, resulted from a higher drain conductance of 2.65 times at the kink region, induced by the 1.7 times higher electron mobility in the strain channel than the conventional Cap-less memory cell at the effective field of 0.3MV/cm. Enhancement of memory margin supports the strained Cap-less memory cell can be promising substrate structures to improve the characteristics of Cap-less memory cell.

• The Korean Journal of Rehabilitation Nursing
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• v.5 no.1
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• pp.60-70
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• 2002

This study was a quasi-experimental study to confirm the effects of a memory training program. The purpose was to develop an effective memory training program for elderly people and to identify the effects of the memory training program. This study was carried out between February 25 and July 20, 1999 and the subjects of the study were 102 elderly people who were participants at a welfare institute in Seoul. The experimental group (51) and the control group (51) were assigned by means of participation order. The control group was matched to the experimental group and was selected considering age, sex, and religion. The experimental group participated in the memory training program. The memory training program was based on the literature of Fogler & Stern (1994), Wang & Lee (1990), Lee (1991) and Lee (1993). The memory training program was given twice a week for two weeks with each program lasting two hours. Depression was measured using the Geriatric Depession Scale developed by Sheikh & Yesavage(1986) and memory self-Efficacy was measured using the Memory Self-Efficacy Scale developed by Berry & Dennehey (1989). Data were analyzed by SPSS PC and the results are described below. 1. The experimental group which participated in the Memory Training Program showed lower depression scores as compared to the control group(t=-4.310, P=.000). 2. The experimental group which participated in the Memory Training Program showed higher higher memory self-efficacy scores as compared to the control group(t=4.354, P=.000). 3. In the experimental group, there was significant negative correlation between the depression scores and memory self-efficacy scores. The results showed that the Memory Training Program is an effective nursing intervention for the elderly with depression and memory problems.

• Journal of IKEEE
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• v.18 no.3
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• pp.392-397
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• 2014

In this paper, we propose a memory operation system architecture for memory latency penalty reduction in SIMT architecture based stream processor. The proposed architecture applied non-blocking cache architecture to reduce cache miss penalty generated by blocking cache architecture. We verified that the proposed memory operation architecture improve the performance of the stream processor by comparing processing performances of various algorithms. We measured the performance improvement rate that was improved in accordance with the ratio of memory instruction in each algorithm. As a result, we confirmed that the performance of stream processor improves up to minimum 8.2% and maximum 46.5%.

• Korean Journal of Cognitive Science
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• v.7 no.3
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• pp.81-113
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• 1996

This paper examines the relation between memory and consciousness,especially the independence between memory and memory consciousness. First,the phenomena of memory performance without memory consciousness, next the phenomena of memory consciousness without memory representation are dealt with. They are examined both in special cases(e,g.,brain damaged patients,under hypnosis,etc.) and in normal cases.In both case, we can find that memory and memory consciousness are independent each other and that memory representation is neither necessary nor sufficient conditions for memory consciousness. Lastly, the roles of memory consciousness in our daily information processing are dealt with. Especially, the importance of memory consciousness in normal social life and the problem of self consciousness are discussed.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.6-11
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• 2018

As embedded memory technology evolves, the traditional Static Random Access Memory (SRAM) technology has reached the end of development. For deepening the manufacturing process technology, the next generation memory technology is highly required because of the exponentially increasing leakage current of SRAM. Non-volatile memories such as STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory), PCM (Phase Change Memory) are good candidates for replacing SRAM technology in embedded memory systems. They have many advanced characteristics in the perspective of power consumption, leakage power, size (density) and latency. Nonetheless, nonvolatile memories have two major problems that hinder their use it the next-generation memory. First, the lifetime of the nonvolatile memory cell is limited by the number of write operations. Next, the write operation consumes more latency and power than the same size of the read operation.These disadvantages can be solved using the compiler. The disadvantage of non-volatile memory is in write operations. Therefore, when the compiler decides the layout of the data, it is solved by optimizing the write operation to allocate a lot of data to the SRAM. This study provides insights into how these compiler and architectural designs can be developed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.8
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• pp.1448-1455
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• 2008

This paper designs Shared Memory on the Dual Core system so that it operates a general System V IPC on the Linux O.S. Shared Memory is the technique that many processes can access to identical memory area. We treat Shared Memory in this paper among big two branches of Shared Memory which are SVR in a kernel step format. We design a share memory facility of Linux operating system on the Dual Core System. In this paper the suggesting design plan of share memory facility in Dual Core system is enhancing the performance in existing unity processor system as a dual core practical use. We attempt a performance enhance in each CPU for each process which uses a share memory.