• Title/Summary/Keyword: micro-scratch

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A Study of Micro-defect on chemical Mechanical Polishing(CMP) Process in VLST Circuit (고집적화 반도체 소자의 CMP 공정에서 Micro-Defect 관한 연굴)

  • Kim, Sang-Yong;Lee, Kyeng-Tae;Seo, Yong-Jin;Lee, Woo-Sun;Chung, Hun-Sang;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1891-1894
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    • 1999
  • We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

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Particle induced micro-scratch in CMP process (Particle 입자에 의한 CMP 마이크로 스크래치 발생 규명)

  • Hwang, Eung-Rim;Kim, Hyung-Hwan;Lee,, Hoon;Pyi, Seung-Ho;Choi, Bong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.40-41
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    • 2005
  • In this study, we proposed CMP micro-scratches generated by contaminative particle which existed on the wafer surface prior to CMP process. The CMP micro-scratches are one of the slurry abrasive related damage. To reduce the micro-scratches, research efforts have been devoted to the optimization of slurry abrasive size distribution. In addition of slurry abrasive, it was found that contaminative particles also were major CMP micro-scratch source.

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Design and Fabrication of Scratch Drive Actuator for Optical Application using MEMS( Micro-electro-mechanical System) Technology (광학응용을 위한 초소형 SDA(Scratch Drive Actuator) 액튜에이터의 설계 및 제작)

  • 김지우;이승섭;권오대
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.905-908
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    • 1999
  • In this paper, we present a polysilicon actuator on silicon wafer using surface micromachining technology which employs an electrostatic stepwise driven Scratch Drive Actuator to generate a force that can move an external object. For optical applications, we propose wavelength selector using distributed feedback structures and this micro actuator.

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Study on Chemical Mechanical Polishing for Reduction of Micro-Scratch (화학기계적연마 공정에서 미소 스크래치 저발생화를 위한 가공기술 연구)

  • Kim, Seong-Jun;An, Yu-Min;Baek, Chang-Uk;Kim, Yong-Gwon
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.8
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    • pp.134-140
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    • 2002
  • Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

Characteristics of Slurry Filter for Reduction of CMP Slurry-induced Micro-scratch (CMP 공정에서 마이크로 스크래치 감소를 위한 슬러리 필터의 특성)

  • 김철복;김상용;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.557-561
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    • 2001
  • Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.

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Evaluation of Failure Modes and Adhesion of DLC Films by Scratch Test (스크래치 시험을 통한 DLC 박막 파손과 밀착 특성 평가)

  • Kim, Ju Hee;Park, Chanhyung;Ahn, Hyo Sok
    • Tribology and Lubricants
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    • v.33 no.4
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    • pp.127-133
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    • 2017
  • In order to characterize the adhesive properties and failure mechanisms of diamond-like carbon (DLC) films of two different thicknesses (130 nm and $1.2{\mu}m$), deposited by plasma-enhanced chemical vapor deposition on a Si substrate, scratch testing with a micro-indenter ($12.5{\mu}m$ tip radius) was performed under a linearly increasing load. These scratch tests were conducted under the same test conditions for both films. The critical load of each film was estimated from the scratch test results, based on a sharp increase in the coefficient of friction and a clear distinction of failure modes. The critical load was the basis for evaluating the adhesion strength of the films, and the $1.2{\mu}m-thick$ DLC film had superior adhesion strength. For better understanding of the failure modes, the following analyses were conducted: friction behavior and scratch tracks analysis using scanning electron microscopy, energy-dispersive spectroscopy, and 3-D profilometry. The scratch test results showed that failure modes were related to the thickness of the films. The 130 nm-thick DLC film underwent cohesive failure modes (cracks and chipping) before reaching to a gross failure stage. On the other hand, the thicker DLC film ($1.2{\mu}m-thick$) did not exhibit micro cracks before a sudden gross failure of the film together with the evidence of cracking and chipping of the Si substrate.

Improvement in Tensile Strength, Scratch Resistance and Tribological Performance of Cu-based Bimetals by Surface Modification Technology (표면개질 기술에 의한 Cu 기반 바이메탈의 인장강도, 스크래치 저항성 및 트라이볼로지 성능 향상)

  • Karimbaev, R.;Amanov, A.
    • Tribology and Lubricants
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    • v.37 no.3
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    • pp.83-90
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    • 2021
  • In this study, an ultrasonic nanocrystal surface modification (UNSM) was used to improve the mechanical properties, scratch resistance and tribological performance of Cu-based bimetals, which are usually used to manufacture sliding bearings and bushings for internal combustion engines (ICEs). Two different Cu-based bimetals, namely CuPb10Sn10 and CuSn10Bi7, were sintered onto a low carbon steel substrate. The mechanical properties and dry tribological performance using a tensile tester and micro-tribo tester were evaluated, respectively. The scratch resistance was assessed using a micro-scratch tester at an incremental load. The tensile test results showed that the yield strength (YS) and ultimate tensile strength (UTS) of both Cu-based bimetals increased after UNSM. Furthermore, the scratch and tribological tests results revealed that the scratch resistance and tribological performance of both Cu-based bimetals were improved by the application of UNSM. These improvements were mainly attributed to the eliminated pores, increased hardness and reduced roughness after UNSM. CuSn10Bi7 demonstrated better mechanical properties, scratch resistance and tribological performance than CuPb10Sn10. It was found that the presence of Bi in CuSn10Bi7 formed a Cu11Bi7 intermetallic phase, which is harder than Cu3Sn. Hence, CuSn10Bi7 demonstrated higher strength and wear resistance than CuPb10Sn10. In addition, a CuSn10Bi7 formed both SnO2 and Bi2O3 that prevented adhesion and improved the tribological performance. It can be expected that under dry tribological conditions, ICEs can utilize UNSM bearings and bushings made of CuSn10Bi7 instead of CuPb10Sn10 under oil-lubricated conditions.

Effects of Amorphous Phase Fraction on the Scratch Response of NiTiZrSiSn Bulk Meatllic Glass in the Kinetic Spraying Process (저온분사공정을 통한 NiTiZrSiSn 벌크 비정질 코팅의 비정질 분율에 따른 스크래치 반응)

  • Yoon, Sang-Hoon;Kim, Soo-Ki;Lee, Chang-Hee
    • Journal of Welding and Joining
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    • v.25 no.3
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    • pp.28-36
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    • 2007
  • A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

Aging effect of annealed oxide CMP slurry (열처리된 산화막 CMP 슬러리의 노화 현상)

  • Lee, Woo-Sun;Shin, Jae-Wook;Choi, Kwon-Woo;Ko, Pil-Ju;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.335-338
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    • 2003
  • Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-layer dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding $1\;{\mu}m$ in size, which could cause micro-scratch on the wafer surface. In this paper, we have studied aging effect the of CMP sin as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

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