• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• Tribology and Lubricants
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• v.5 no.2
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• pp.87-93
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• 1989

The effect of the Concentration of solid lubricant, MoS$_2$ alone and in presence of other additives, ZDDP and DEP on the wear characteristics of liquid lubricants has been studied using the Four Ball Wear tester and Falex E.P. tester. On the basis of the experimental result, it showed that the concentration of MoS$_2$ and compatibility with other additives is very cbncerned with wear performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.478-482
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• 2014

Graphene have renewed considerable interest in inorganic, two-dimensional materials for future electronics. However, graphene does not have a bandgap, it is limited to apply directly to transistors and logic devices. Hence, other layered materials such as molybdenum disulphide ($MoS_2$) have been investigated to address this challenge. Here, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of $MoS_2$/metal contacts, we perform density functional theory electronic structure calculations based on linear combination of atomic for the geometry, bonding, binding energy, PDOS, LDOS and electronic structure. We choose Au as a contact metal because it is the most common contact metal. In this paper, we demonstrate $MoS_2$/Au contacts have a more promising potential in flexible nanoelectronics than $MoS_2$ itself.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.87-90
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• 2004

In this paper, net-shape forming of an automobile gear is investigated. Barrel, a component of automobile start motor, is adopted as a net-shape forming. In order to accomplish the goal of net-shape forming without cutting of tooth and cam after forming, forming ability is raised through billet treatment and die design. As a technique of billet treatment spheroidizing annealing of billet to get low hardness and molybdenum disulphide coating to get low contact friction between billet and die is carried out. One of critical points of die design, fillet radii variation of tooth of die is applied to get smooth surface of barrel after cold forging. As a measurement of tooth accuracy, distance between two pins and lead-tooth alignments are investigated. Cam profile accuracy is checked with a 3D measuring instrument. Results obtained from the tests revealed reasonable result with respect to design goal. By these results, the paper shows that reasonable results can be obtained by billet treatment and die design for net-shape forming.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.627-632
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• 2018

Two dimensional(2D) crystals, composed of a single layer or a few atomic layers extracted from layered materials are attracting researchers' interest due to promising applications in the nanoelectromechanical systems. Worldwide researchers are preparing devices with suspended 2D materials to study their physical and electrical properties. However, during the fabrication process of 2D flakes on a target substrate, contamination occurs, which makes the measurement data less reliable. We propose a dry transfer method using poly-methyl methacrylate(PMMA) for the 2D flakes to transfer onto the targeted substrate. The PMMA is then removed from the device by an N-Methyl-2-pyrrolidone solution and a critical point dryer, which makes the suspended 2D flakes residue free. Our method provides a clean, reliable and controllable way of fabricating micrometer-sized suspended 2D nanosheets.

• Advances in nano research
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• v.10 no.1
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• pp.91-99
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• 2021

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.