• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.246-250
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• 2006

Highly ordered gold nanodot arrays have been successfully obtained by vacuum evaporation using an anodic aluminum oxide (AAO) as a shadow mask. An AAO mask with the thickness of 300 um was prepared through an anodization process. The structure of the nanodot arrays was studied by a field- emission scanning electron microscope (FE-SEM) equipped with an energy dispersive spectrometer (EDS). A tapping mode atomic force microscope (AFM) was employed for studies of height and phase feature. The nanodot arrays were precisely reproduced corresponding to the hexagonal structure of the AAO mask in a large area. In the gold nanodot arrays, the average diameter of dots is approximately the same as the AAO pore size in the range from 70 um to 80 nm and 100 nm center-to-center spacing. EDS analysis indicated that the gold dots were almost entirely consisted of gold, a highly demanded material.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.126-129
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• 2013

We have fabricated an ordered Ni nanodot structure using an alumina mask prepared via 2-step anodization technique under phosphoric acid. We have formed a porous structure with average pore size of 279 nm on $2{\mu}m$ thick alumina film and the thermal deposition of thin Ni film though the mask led to the formation of ordered Ni nanodot structure with an average dot size of 293 nm, following the pore structure on the mask. We further investigated the magnetic properties of the nanodot structure by measuring the hysteresis curve at room temperature. When compared to the magnetic properties of a continuous Ni film, we observed the decrease in the squareness and the increase in coercivity along the magnetization easy axis, due to the isolated nanodot structure. Our study suggests that the ordered nanodot structure can be easiy fabricated with thin film deposition technique using anodized alumina mask as a mask.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• Journal of Magnetics
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• v.13 no.2
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.865-866
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.50.2-50.2
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• 2007

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.427-433
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• 2006

We have fabricated nanodot arrays by using phase separated (PS- b- PMMA) diblock copolymer film and anodic aluminum oxide (AAO) membrane as templates with hexagonal arrays of cylindrical microdomains perpendicular to the substrate. Pulsed laser deposition technique was used to deposit various kinds of materials including Ag, Ni, ZnO, Si:Er, and Co/Pt onto Si substrates. The size and separation of nanodots correspond to those of the templates used, The density of nanodots was estimated to be $6{\times}10^{11}/cm^2$ and $1{\times}10^{10}/cm^2$ when the diblock copolymer and AAO were used, respectively. In particular, the optical properties of ZnO and Si: Er nanodot arrays were investigated and the strong photoluminescence at 380 nm and $1.54{\mu}m$ was observed from ZnO and Si:Er nanodot arrays, respectively.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.327-330
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• 2006

We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.

• Journal of the Korean institute of surface engineering
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• v.43 no.5
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• pp.248-254
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• 2010

Porous $Al_2O_3$ film can be utilized as template for fabrication of nano-structured materials. Porous anodic alumina layer as template was prepared by anodization of aluminum in oxalic acid, and the pore diameter and barrier-type alumina layer can be controlled for proper anodizing parameter by widening process in $H_3PO_4$ solution. The $SiO_2$ nanodot and Ni nanowire was fabricated using anodic alumina template and their characteristics were investigated using SEM and TEM with EDS. Especially the growth mechanism of $SiO_2$ nanodot in alumina membrane compared with thinning of the alumina barrier layer during anodization was also investigated.

• Journal of Magnetics
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• v.10 no.2
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• pp.58-62
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• 2005

Periodic magnetic nanodot arrays were successfully produced on glass substrates by interference laser lithography and electron beam lithography methods. Magnetic force microscopy (MFM) observation was carried out on fabricated nanodot arrays. MFM tip induced magnetization effects were clearly observed in ferromagnetic elliptical nanodots varying in material and aspect ratio. Fe-Cr dots with a high aspect ratio show reversible switching of the single domain magnetization state. At the same time, Co nanomagnets with a low aspect ratio exhibit tip induced transitions between the single domain and the vortex state of magnetization. The simple nanolithography is potentially an efficient method for fabrication of patterned magnetic arrays.