• Journal of Biomedical Engineering Research
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• v.32 no.3
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• pp.264-269
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• 2011

To increase therapeutic efficiency and biological safety, it is important to precision control of acoustic output for therapeutic ultrasound equipment. In this paper, the electro-acoustic radiation conductance, one of electroacoustic characteristics of therapeutic ultrasound equipment, was measured by the radiation force balance method according to IEC 61161 standards and the acoustic output was estimated using the electro-acoustic radiation conductance. The estimation of acoustic output was conducted to continuous wave mode and pulse wave mode of duty cycle between 20% and 80%. The differences between prediction values and measurement results are within 5% of measurement uncertainty, which is a reasonably good agreement. The results show that acoustic output controlled by electro-acoustic radiation conductance was found to be an effective method.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2001.05a
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• pp.87-91
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• 2001

This paper discusses the influence of input conductance on the convergece of the continuous Hopfield neural networks. The convergence has been analyzed for the input and output nodes of neurons. Also, the characteristics of equilibrium points has been analyzed depending on different values of the input conductance.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.4
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• pp.325-330
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• 2001

It has been realized that the results of circuit level simulation of neural networks, used for optimization problems, arc much different from those of algorism level simulation. In other words, the outputs converges asymptotically as time elapes, however, the input convergence depends on the value of parasitic conductance connected between input node and ground. Also, this conductance affects system performance. This paper discusses the influence of input conductance on the convergece of the continuous Hopfield neural networks. The convergence has been analyzed for the input and output nodes of neurons. Also, the characteristics of equilibrium points has been analyzed depending on different values of the input conductance.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.783-790
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.233-236
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• 2000

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.6
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• pp.814-822
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• 1986

Flow patterns and its transitions in vertical two phase flow of air-water isothermal flow are identified objectively by void output signals and moments computed from the Probability Density Function which is associated with the statistical measurement for time average local void fractions using conductance probe. It has been shown that the probe output signals, PDF distributions and its moments are deterministic criteria of flow pattern and transition classification.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.49 no.11
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• pp.617-624
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• 2000

The negative weight can be ofter seen in Hopfield neural network, which is difficult to implement negative conductance in circuits. Usually, the inverted output of amplifier is used to avoid negative resistors for expressing the negative weights in hardware implementation. However, there is some difference between using negative resistor and the inverted output of amplifier for representing the negative weight. This difference is discussed in this paper.

• The Transactions of the Korean Institute of Power Electronics
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• v.13 no.2
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• pp.119-127
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• 2008

In this paper, the modular line-connected photovoltaic PCS (photovoltaic power conditioning system) is proposed. A step-up DC-DC converter using a active-clamp circuit and a dual series-resonant rectifier is proposed to achieve a high efficiency and a high input-output voltage ratio efficiently. An IncCond (incremental conductance) MPPT (maximum power point tracking) algorithm that improves MPPT characteristic is used. The PV module current is estimated without using a DC current sensor. By control a inverter using a linearized output current controller, a unity power factor is achieved. All algorithms and controllers are implemented on a single-chip microcontroller and the superiority of the proposed DC-DC converter and controllers is proved by experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.423-430
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating $n^{+}$ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating $n^{+}$ zones, the transistor channel region is split into four zones with different lengths defined by a floating $n^{+}$ region. This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA while that of the conventional dual-gate structure is 0.5 mA at a 12 V drain voltage and a 7 V gate voltage. This results show a $80 {\%}$ enhancement in on-current by adding two floating $n^{+}$ zones. Moreover we observed the reduction of electric field In the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.