• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.200-204
• /
• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Korean Journal of Materials Research
• /
• v.12 no.9
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• v.y2005m4
• /
• pp.106-111
• /
• 2005

Failure mechanisms were investigated for the two layer thermal barrier coatings consisting of NiCrAlY bond coat and $ZrO_2-8wt.\% Y_{2}O_3$ ceramic coating during cyclic oxidation. $Al_{2}O_3$ developed at the ceramic coating/bond coat interface first, followed by the Cr/Ni rich oxides such as $NiCr_{2}O_4 and Ni(Al,Cr)_{2}O_4$ during cyclic oxidation It was observed that the spalling of ceramic coatings took place primarily within the NiCrAlY bond coat oxidation products or at the interface between the bond coat oxidation products and zirconia based ceramic coating or the bond coat. It was also observed that the fracture within these oxidation products occurred with the formation of $Ni(Cr,Al)_{2}O_4$ spinel or Cr/Ni rich oxides. It was therefore concluded that the formation of these oxides was a life-limiting event for the thermal barrier coatings.

• The Korean Journal of Ceramics
• /
• v.4 no.4
• /
• pp.340-344
• /
• 1998

Failure mechanisms were investigated for the two layer thermal barrier coatings consisting of NiCrAlY bond coat and $ZrO_2$-8wt.% $Y_2O_3$ ceramic coating during cyclic oxidation. $Al_2O_3$ developed at the ceramic coating/bond coat interface first, followed by the Cr/Ni rich oxides such as $NiCr_2O_4$ and $Ni(Al, Cr)_2O_4$ during cyclic oxidation. It was observed that the spalling of ceramic coatings took place primarily within the NiCrAlY bond coat oxidation products or at the interface between the bond coat oxidation products and zirconia based ceramic coating or the bond coat. It was also observed that the fracture within these oxidation products occurred with the formation of $Ni(Cr, Al)_2O_4$ spinel or Cr/Ni rich oxides. It was therefore concluded that the formation of these oxides was a life-limiting event for the thermal barrier coatings.

• Journal of the Korean Magnetics Society
• /
• v.12 no.3
• /
• pp.99-102
• /
• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• Journal of the Korean institute of surface engineering
• /
• v.27 no.2
• /
• pp.91-98
• /
• 1994

For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.4
• /
• pp.147-152
• /
• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.06a
• /
• pp.725-726
• /
• 2009

• Korean Chemical Engineering Research
• /
• v.45 no.2
• /
• pp.183-189
• /
• 2007

We have investigated the oxidation of gas phase elemental mercury using dielectric barrier discharge (DBD). In the DBD process, active species such as $O_3$, OH, O and $HO_2$ are generated by collisions between electrons and gas molecules. Search active species convert elemental mercury into mercury oxide which is deposited into the wall of DBD reactor because of its low vapor pressure. The oxidation efficiency of elemental mercury has been decreased from 60 to 30% by increasing the initial concentration of the elemental mercury from 72 to $655{\mu}g/Nm^3$. The gas retention time at the DBD reactor has showed the little effect on the oxidation efficiency. The more oxygen concentration has induced the more oxidation of elemental mercury, whereas there has been no appreciable oxidation within pure $N_2$ discharge. It has indicated that oxygen atom and ozone, generated in air condition determine the oxidation of elemental mercury.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.24 no.1
• /
• pp.13-16
• /
• 2018

Powdered infant formula is susceptible to oxidation in the presence of oxygen. Even though the product is usually packaged in nitrogen atmosphere, the oxygen ingress through the package layer may occur in case of flexible pouches and affects the oxidation of the product. $O_2$ barrier of the package is thus important variable to protect the product from oxidative deterioration. $O_2$ barrier property was investigated for aluminum-laminated small pillow packs of $3.5{\times}17.5cm$. Storage temperature and combination of primary and secondary packages were evaluated as variables affecting the barrier for conditions of empty pouch flushed with nitrogen. Apparent oxygen transmission rate of the primary package exposed to air was $2.32{\times}10^{-3}mL\;(STP)\;atm^{-1}\;d^{-1}$ at $30^{\circ}C$ and its temperature dependence could be explained by activation energy of $28.5kJ\;mol^{-1}$ in Arrhenius relationship. The additional secondary package of nylon/PE film containing 20 primary packages was ineffective in modulating package $O_2$ transmission and was only marginally helpful when combined with oxygen scavenger. The same was true in suppressing the product oxidation when the primary package was filled with 14 g of the formula.