• Communications of the Korean Mathematical Society
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• v.18 no.3
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• pp.533-540
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• 2003

We introduce the notion of semi-convergence of p-stacks and by using that notion we characterize the semi-interior, semiclosure, separation axioms and semi-continuity on a topological space. Also we introduce a new notion of p-somicompactness and investigate its properties in terms of semi-convergence of p-stacks.

• The Pure and Applied Mathematics
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• v.14 no.1 s.35
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• pp.15-21
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• 2007

We introduce the notion of pre-convergence of p-stacks and characterize the pre-interior, pre-closure, separation axioms and pre-continuity on a topological space by using pre-convergence of p-stacks. We also introduce the notion of p-precompactness and investigate its properties in terms of pre-convergence of p-stacks.

• Communications of the Korean Mathematical Society
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• v.21 no.4
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• pp.749-758
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• 2006

In [1], we introduced the notion of p-stacks. In this paper, by using p-stacks we characterize $S^*-continuous$ functions, separation axioms, supracompactness and some properties on supratopological spaces. We also introduce the notion of p-supracompactness and study some properties.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1577-1582
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• 2006

Tandem OLED structures formed by connecting two or more low-voltage electroluminescent units (stacks) are effective for achieving high efficiency at low current density as well as long operational lifetime. We have fabricated white emitting tandem structures with two or three low-voltage white-emitting stacks using transparent organic "PN"-type connectors. Three- stack white tandem structures with efficiency greater than 24 cd/A at D65 and operational stability of about 110,000 h. (extrapolated) at $1000\;cd/m^2$ have been demonstrated. With a stacked structure, the power consumption for displays using an RGBW format can be reduced by 25% compared to previously described formulations. We have also fabricated advanced white tandem structures where the color gamut (NTSC x,y ratio) has been improved to greater than 70% using standard color filters. The white OLEDs can also be used to increase the colorrendering index CRI (>80%), an important consideration for solid-state lighting.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2089-2091
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• 2000

Pulsed power systems consist of a capacitor bank, an isolated high-voltage charging power-supply, high-current bus-work for charging and discharging and a control system. In such pulsed power systems, the operating-lifetime of the capacitors is closely dependent on the voltage reversal. Hence, most capacitor-discharging systems includes crowbar circuits. The crowbar circuit prevents the capacitor recharging with reverse voltage. Usually it consists of crowbar resistors and high pulse-current diode-stacks connected in series. The requirements for the diode-stacks are fast-recovery time and high-voltage and large-current ratings, which results in the high cost of the pulsed-power system. This paper presents a protection scheme of a charging and discharging system of a 500kJ capacitor bank using a low-cost crowbar circuit and safety-fuses.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• Journal of the Korea Society for Simulation
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• v.1 no.1
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• pp.17-24
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• 1992

The capacity of the drilling process in Multi-Layer PCB fabrication can be affected by various process parameters determining material flows in the unit operations. The ratio of mass-lamination to pin lamination and the number of stacks as the most critical paramaters, among them, were chosen on the basis of exhaustive field evaluation to study their effects on the capacity of the process. The best alternative condition for maximum capacity of the process was selected by simulation of process.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.45-45
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• 2002