• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.29-34
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• 1991

An optoelectronic implementation of analog and non-volatile synaptic weights of neural networks is proposed by using the doping modulated amophous silicon multilayer. The persistent photoconductivity(PPC) of the multilayer induced by a short illumination is characterized in experiment and implemented to the non-volatile synaptic weights. An optoelectronic processor with the single layer perceptron algorithm is also proposed. Some learning equations of the processor and the results of simulation are presented.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.49-55
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• 1996

Hydrogenated amorphous carbon(a-C:H) films were fabricated by the low-frequency (60Hz) glow discharge of the mixture of methane and hydrogen, and their electrical properties were investigated. We observed that a-C:H films show the persistent photoconductivity(PPC) by illumination of heat-filtered while light for a few seconds. The PPC was about 10 times larger than the annealed dark conductivity. The samples clearly showed metastable characteristics. With increasing illumination times from 1 to 100 min, the annealing activation energy of the PPC was about 0.39eV. The annealing temperature at which the PPC disappeared increasing from $100^{\circ}C$ to $130^{\circ}C$. Illumination longer than 80 min leads to the formation of ${\pi}$ defects and to the decrease of PPC. From these results, we tentatively propose that the states in the ${\pi}$ band act as deep trap centers generating the metastabilities.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.120-120
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• 1999

III-nitride계 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 수 있는 낮은 저항의 ohmic contact은 필수적이다. Al이나 Ti와 같은 물질을 기초로 한 n-GaN의 경우는 이미 많은 연구결과가 발표되어 전기적 광학적 소자를 동작하는데 충분히 낮은 ohmic contact저항( )을 었다. 그러나 p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도( )의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 이상의 높은 값을 갖게 만들고 있으며, 이에 대한 해경방안으로는 고온의 열처리를 통하여 p-GaN와 금속 사이에서 화학적 반응을 일으킴으로써 표면 근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechanism을 이용하는 것이다. 이로 인해 결국 낮은 접촉 비저항을 얻을 수 있게되며, 일반적으로 p-GaN에서는 Nidl 좋은 물질로 알려져 있다. 그러나 Ni은 50$0^{\circ}C$이상의 열처리에서 쉽게 산화되는 특성 때문에 높은 캐리어를 얻는데 어려운 문제점이 있다. 이에 본 연구에서는 MBE로 성장된 p-GaN박막을 Mg의 activation을 더욱 증가시키기 위해 N2 분위기에서 15분간 90$0^{\circ}C$에서 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/Au를 ohmic metal로 하여 contact한 후에 90$0^{\circ}C$에서 10초간 rapid thermal annealing (RTA)처리를 했다. 성장된 박막의 광학적 성질은 PL로써 측정하였으며, photoconductivity 실험을 통해 impurity의 life time을 분석하였고, persistent photoconductivity를 통해 dark current를 측정하였다. 또한 contact resistance를 계산하기 위해 circular-TLM method을 이용하여 I-V 특성을 조사하였다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• Journal of IKEEE
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• v.27 no.3
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• pp.288-295
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• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.